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磁控溅射淀积掺Er富Si氧化硅膜中Er3+ 1.54μm光致发光

袁放成 冉广照 陈源 张伯蕊 乔永平 傅济时 秦国刚 马振昌 宗婉华

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磁控溅射淀积掺Er富Si氧化硅膜中Er3+ 1.54μm光致发光

袁放成, 冉广照, 陈源, 张伯蕊, 乔永平, 傅济时, 秦国刚, 马振昌, 宗婉华

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA
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  • 用磁控溅射淀积不同富Si程度的掺Er富Si氧化硅薄膜.室温下测量其光致发光谱,观察到各谱中都含有1.54和1.38μm两个发光峰,其中1.54和1.38μm的光致发光峰分别来自Er3+和氧化硅中某种缺陷.系统研究了Er3+1.54μm光致发光峰强度对富Si程度及退火温度的依赖关系.还发现1.54μm发光峰强度与1.38μm发光峰强度相互关联,对此进行了讨论
    Room temperature photoluminescence (PL) has been observed from Er doped silicon rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has two peaks at 1.54 and 1.38μm, which originate from Er3+ and a certain kind of defects, respectively, in the silicon rich silicon oxide. It was found that 1.54 and 1.38μm PL peak intensities are correlated with each other. The PL intensity-dependence on the excess-Si content and annealing temperature was studied in detail.
    • 基金项目: 国家自然科学基金(批准号:59832100);集成光电子国家重点实验室基金资助的课题.
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  • 文章访问数:  6421
  • PDF下载量:  589
  • 被引次数: 0
出版历程
  • 收稿日期:  2001-04-19
  • 修回日期:  2001-06-15
  • 刊出日期:  2001-06-05

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