-
通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因.
-
关键词:
- 功率金属氧化物半导体场效应晶体管 /
- 负偏置温度不稳定性 /
- 反应扩散模型
The effect of static negative bias temperature instability stress on p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability degradation presents the trend which follows the reaction-diffusion (R-D) theory on the exaggerated time scale. A flat-roof section is observed under the varying stress condition, which can be considered as the dynamic equilibrium phase through the simulation verification based on the R-D model. The analysis of the simulated results also provides the explanation for the difference in the time duration of the dynamic equilibrium phase under the condition of varying stress voltage.[1] Huard V, Denais M, Parthasarathy C 2006 Microelectron. Reliab. 46 1
[2] Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[3] Stathis J H, Zafar S 2006 Microelectron. Reliab. 46 270
[4] Cao Y R, Ma X H, Hao Y, Tian W C 2010 Chin. Phys. B 19 097306
[5] Ma X H, Cao Y R, Hao Y 2010 Chin. Phys. B 19 1173068
[6] Li Z H, Liu H X, Hao Y 2006 Acta Phys. Sin. 55 820 (in Chinese)
[7] Huard V, Denais M, Perrier F, Revil N, Parthasarathy C, Bravaix A, Vincent E 2005 Microelectron. Reliab. 45 83
[8] Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectron. Reliab. 47 853
[9] Grasser T, Kaczer B, Gos W, Reisinger H, Aichinger T, Hehenberger P, Wagner P, Schanovsky F, Franco J, Roussel P, Nelhiebel M 2010 Proceedings of IEEE International Electron Devices Meeting San Francisco, USA, December 6-8, 2010 p82
[10] Stojadinović N, Danković D, Djorić-Veljković S, Davidović V, Manić I, Golubović S 2005 Microelectron. Reliab. 45 1343
[11] Danković D, Manić I, Djorić-Veljković S, Davidović V, Golubović S, Stojadinoviv N 2006 Microelectron. Reliab. 46 1828
[12] Bhardwaj S, Wang W, Vattikonda R, Cao Y, Vrudhula S 2008 IET Circuit Dev. Syst. 2 361
[13] Alam M A, Mahapatra S 2005 Microelectron. Reliab. 45 71
[14] Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam A E, Alam M A 2013 IEEE Trans. Electron Dev. 60 901
[15] Danković D, Manić I, Djorić-Veljković S, Golubović S, Stojadinović N 2008 Proceedings of the 26th International Conference on Microelectronics Niš, Serbia, May 11-14, 2008 p599
[16] Ogawa S, Shiono N 1995 Phys. Rev. B 51 4218
[17] Kufluoglu H, Alam M A 2006 IEEE Trans. Electron Dev. 53 1120
-
[1] Huard V, Denais M, Parthasarathy C 2006 Microelectron. Reliab. 46 1
[2] Schroder D K, Babcock J A 2003 J. Appl. Phys. 94 1
[3] Stathis J H, Zafar S 2006 Microelectron. Reliab. 46 270
[4] Cao Y R, Ma X H, Hao Y, Tian W C 2010 Chin. Phys. B 19 097306
[5] Ma X H, Cao Y R, Hao Y 2010 Chin. Phys. B 19 1173068
[6] Li Z H, Liu H X, Hao Y 2006 Acta Phys. Sin. 55 820 (in Chinese)
[7] Huard V, Denais M, Perrier F, Revil N, Parthasarathy C, Bravaix A, Vincent E 2005 Microelectron. Reliab. 45 83
[8] Alam M A, Kufluoglu H, Varghese D, Mahapatra S 2007 Microelectron. Reliab. 47 853
[9] Grasser T, Kaczer B, Gos W, Reisinger H, Aichinger T, Hehenberger P, Wagner P, Schanovsky F, Franco J, Roussel P, Nelhiebel M 2010 Proceedings of IEEE International Electron Devices Meeting San Francisco, USA, December 6-8, 2010 p82
[10] Stojadinović N, Danković D, Djorić-Veljković S, Davidović V, Manić I, Golubović S 2005 Microelectron. Reliab. 45 1343
[11] Danković D, Manić I, Djorić-Veljković S, Davidović V, Golubović S, Stojadinoviv N 2006 Microelectron. Reliab. 46 1828
[12] Bhardwaj S, Wang W, Vattikonda R, Cao Y, Vrudhula S 2008 IET Circuit Dev. Syst. 2 361
[13] Alam M A, Mahapatra S 2005 Microelectron. Reliab. 45 71
[14] Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam A E, Alam M A 2013 IEEE Trans. Electron Dev. 60 901
[15] Danković D, Manić I, Djorić-Veljković S, Golubović S, Stojadinović N 2008 Proceedings of the 26th International Conference on Microelectronics Niš, Serbia, May 11-14, 2008 p599
[16] Ogawa S, Shiono N 1995 Phys. Rev. B 51 4218
[17] Kufluoglu H, Alam M A 2006 IEEE Trans. Electron Dev. 53 1120
计量
- 文章访问数: 9554
- PDF下载量: 400
- 被引次数: 0
下载:
