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Threshold voltage model of strained Si channel nMOSFET

Zhang Zhi-Feng Zhang He-Ming Hu Hui-Yong Xuan Rong-Xi Song Jian-Jun

Threshold voltage model of strained Si channel nMOSFET

Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun
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  • Received Date:  29 September 2008
  • Accepted Date:  21 December 2008
  • Published Online:  20 July 2009

Threshold voltage model of strained Si channel nMOSFET

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: The model of nMOSFET threshold voltage was established based on study of voltage distribution in strained Si film,which was grown on relaxed SiGe virtual substrate.The model was analyzed with reasonable parameters, and the dependence of threshold voltage on Ge fraction and channel doping was revealed. The dependence of threshold voltage shift on Ge fraction was also obtained. The relationship between threshold voltage and strained Si layer thickness and doping was studied. The results indicates, the threshold voltage increases with increasing doping concentrations of relaxed SiGe layer, decreases with increasing Ge fraction of relaxed SiGe layer, and increases with increasing strained Si layer thickness. This threshold voltage model provides valuable reference to the strained-Si device design.

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