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Model of hole effective mass of strained Si1-xGex/(111)Si

Song Jian-Jun Zhang He-Ming Hu Hui-Yong Xuan Rong-Xi Dai Xian-Ying

Model of hole effective mass of strained Si1-xGex/(111)Si

Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying
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  • Abstract views:  3436
  • PDF Downloads:  1281
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  • Received Date:  23 April 2009
  • Accepted Date:  31 May 2009
  • Published Online:  15 January 2010

Model of hole effective mass of strained Si1-xGex/(111)Si

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071

Abstract: There has been much interest in the Si-based strained technology lately. The research on the hole effective mass of Si-based strained material is the theoretical basis for the performance enhancement of Si-based strained PMOS devices. Based on the valence band E(k)-k relation of strained Si1-xGex/(111)Si, the hole effective mass along arbitrarily k wavevector direction were obtained. And the hole isotropic effective mass models were established. It was found that in comparison with relaxed Si, the more obvious anisotropy of the hole effective mass occurs in strained Si1-xGex/(111)Si and the hole isotropic effective mass of the top valence band decreases obviously with increasing Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained PMOS devices.

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