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Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia Yin Xiang-Kun Liu Bing-Jie Hao Yue

Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue
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  • Received Date:  12 March 2010
  • Accepted Date:  18 June 2010
  • Published Online:  05 June 2010

Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

  • 1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

Abstract: This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor (SGOI pMOSFET), revises the energy band model of strained-silicon, and extracts the main physical parameters of strained-SiGe devices. These parameters include the energy gap, electron affinity, build-up potential, etc. In this paper, the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented. By using the boundary conditions to solve these equations, an accurate threshold voltage analytic model is proposed and its validity is verified.

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