Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia; Yin Xiang-Kun; Liu Bing-Jie; Hao Yue

doi:10.7498/aps.59.8877

Abstract

This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor (SGOI pMOSFET), revises the energy band model of strained-silicon, and extracts the main physical parameters of strained-SiGe devices. These parameters include the energy gap, electron affinity, build-up potential, etc. In this paper, the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented. By using the boundary conditions to solve these equations, an accurate threshold voltage analytic model is proposed and its validity is verified.

Keywords:

strained silicon /
SiGe-on-insulator /
p-channel metal-oxide-semiconductor-field-effect-transistor /
threshold voltage analytic model

Authors and contacts

1.
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

References

[1]	Ma X B, Liu W L, Liu X Y, Du X F, Liu Z T, Lin C L, Chu P K 2009 J. Electrochem. Soc. 157 104
[2]	Balestra F 2008 Acta Phys. Polon. A 114 945
[3]	Minjoo L L, Engene A 2005 J. Appl. Phys. 97 1
[4]	Olsen S H, Yan L, Agaiby R, Escobedo C E, ONeill A G, Hellstroem P E, Oestling M, Lyutovich K, Kasper E, Claeys C, Parker E H C 2009 Microelectron. Eng. 86 218
[5]	Venkataraman V, Nawal S, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[6]	Aberg I, Chleirigh C N, Hoyt J L 2006 IEEE Trans. Electron Dev. 53 1021
[7]	Toshifumi I, Toshinori N, Tsutomu T 2006 IEEE Trans. Electron Dev. 53 2809
[8]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[9]	Luan S Z, Liu H X 2008 Chin. Phys. B 17 3077
[10]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 7228]
[11]	Jung J W 2009 Current Appl. Phys. 9 47
[12]	Lin C N, Yang Y L, Chen W T, Lin S C, Chuang K C, Hwu J G 2008 Microelectron. Eng. 85 1915
[13]	Batwani H, Gaur M, Kumar M J 2009 J. Compt. Math. Electr. Electron. Eng. 28 353
[14]	Yeh L Y, Liao M H, Chen C H, Wu J, Lee J Y M, Liu C W, Lee T L, Liang M S 2009 IEEE Trans. Electron Dev. 56 2848

Cited By

[1]	Ma X B, Liu W L, Liu X Y, Du X F, Liu Z T, Lin C L, Chu P K 2009 J. Electrochem. Soc. 157 104
[2]	Balestra F 2008 Acta Phys. Polon. A 114 945
[3]	Minjoo L L, Engene A 2005 J. Appl. Phys. 97 1
[4]	Olsen S H, Yan L, Agaiby R, Escobedo C E, ONeill A G, Hellstroem P E, Oestling M, Lyutovich K, Kasper E, Claeys C, Parker E H C 2009 Microelectron. Eng. 86 218
[5]	Venkataraman V, Nawal S, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[6]	Aberg I, Chleirigh C N, Hoyt J L 2006 IEEE Trans. Electron Dev. 53 1021
[7]	Toshifumi I, Toshinori N, Tsutomu T 2006 IEEE Trans. Electron Dev. 53 2809
[8]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[9]	Luan S Z, Liu H X 2008 Chin. Phys. B 17 3077
[10]	Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 7228]
[11]	Jung J W 2009 Current Appl. Phys. 9 47
[12]	Lin C N, Yang Y L, Chen W T, Lin S C, Chuang K C, Hwu J G 2008 Microelectron. Eng. 85 1915
[13]	Batwani H, Gaur M, Kumar M J 2009 J. Compt. Math. Electr. Electron. Eng. 28 353
[14]	Yeh L Y, Liao M H, Chen C H, Wu J, Lee J Y M, Liu C W, Lee T L, Liang M S 2009 IEEE Trans. Electron Dev. 56 2848

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