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Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

Wang Cheng Wang Guan-Yu Zhang He-Ming Song Jian-Jun Yang Chen-Dong Mao Yi-Fei Li Yong-Mao Hu Hui-Yong Xuan Rong-Xi

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

Wang Cheng, Wang Guan-Yu, Zhang He-Ming, Song Jian-Jun, Yang Chen-Dong, Mao Yi-Fei, Li Yong-Mao, Hu Hui-Yong, Xuan Rong-Xi
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  • Received Date:  13 May 2011
  • Accepted Date:  15 June 2011
  • Published Online:  15 April 2012

Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si

  • 1. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Fund Project:  Project supported by the National Ministries and Commissions (Grant Nos. 51308040203, 6139801), the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499, 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Abstract: Performance enhancement of strained Si material originates from the stress on it, which can be measured by Raman spectroscopy. A study of the theoretical model of strain-induced Raman spectrum frequency shift in strained Si material is of profound theoretical and practical significance. The Raman frequency shift of strained Si is significantly correlated with the stress intensity, the stress type and the crystal plane. However, the corresponding reports republished are lacking in integrality and systematization in the process of modeling. In this paper, according to the theory of Raman spectroscopy, based on Secular equation and Raman selection rules, quantitative relationships between strain tensor and Raman frequency shift for uniaxial and biaxial strained Si grown on (001), (101), and (111) SiGe substrates are achieved. On this basis, theoretical models of mechanical stress and Raman spectrum for uniaxial and biaxial strained Si materials grown on (001), (101), and (111) SiGe substrates are obtained using Hooke's law, respectively. The procedure for setling up these models is elaborate and systematic and the results obtained are comprehensive and quantificational, which can provide an important reference for the stress analysis in strained Si material.

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