[1] Greco G, Prystawko P, Leszczynski M, Nigro R L, Raineri V, Roccaforte F 2011 J. Appl. Phys. 110 123703
[2] Lin D W, Lee C Y, Liu C Y, Han H V, Lan Y P, Lin C C, Chi G C, Kuo H C 2012 Appl. Phys. Lett. 101 233104
[3] Xiong J Y, Zhao F, Fan G H, Xu Y Q, Liu X P, Song J J, Ding B B, Zhang T, Zheng S W 2013 Chin. Phys. B 22 118504
[4] Yang B, Guo Z Y, Xie N, Zhang P J, Li J, Li F Z, Lin H, Zheng H, Cai J X 2014 Chin. Phys. B 23 048502
[5] Kim H, Kim K K, Choi K K, Kim H, Song J O, Cho J, Baik K H, Sone C, Park Y, Seong T Y 2007 Appl. Phys. Lett. 91 023510
[6] Jeon J W, Seong T Y, Kim H, Kim K K 2009 Appl. Phys. Lett. 94 042102
[7] Feng F F, Liu J L, Qiu C, Wang G X, Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞, 刘军林, 邱冲, 王光绪, 江风益 2010 物理学报 59 5706]
[8] Liu J L, Feng F F, Zhou Y H, Zhang J L, Jiang F Y 2011 Appl. Phys. Lett. 99 111112
[9] Magdenko L, Patriarche G, Troadec D, Mauguin O, Morvan E, di Forte-Poisson M A, Pantzas K, Ougazzaden A, Martinez A, Ramdane A 2012 J. Vac. Sci. Technol. B 30 022205
[10] Guo D B, Liang M, Fan M N, Shi H W, Liu Z Q, Wang G H, Wang L C 2007 Chin. J. Semiconductors 28 1811 (in Chinese) [郭德博, 梁萌, 范曼宁, 师宏伟, 刘志强, 王国宏, 王良臣 2007 半导体学报 28 1811]
[11] Jeon J W, Yum W S, Oh S, Kim K K, Seong T Y 2012 Appl. Phys. Lett. 101 021115
[12] Huang Y P, Yun F, Ding W, Wang Y, Wang H, Zhao Y K, Zhang Y, Guo M F, Hou X, Liu S 2014 Acta Phys. Sin. 63 127302 (in Chinese) [黄亚平, 云峰, 丁文, 王越, 王宏, 赵宇坤, 张烨, 郭茂峰, 侯洵, 刘硕 2014 物理学报 63 127302]
[13] Julita S K, Szymon G, Elzbieta L S, Ryszard P, Grzegorz N, Michal L, Piotr P, Ewa T, Jan K, Stanislaw K 2010 Solid State Electron. 54 701
[14] Qiao D, Yu L S, Lau S S, Lin J Y, Jiang H X, Haynes T E 2000 J. Appl. Phys. 88 4196
[15] Chary I, Chandolu A, Borisov B, Kuryatkov V, Nikishin S, Holtz M 2009 J. Electron. Mater. 38 545
[16] Jiang F, Cai L E, Zhang J Y, Zhang B P 2010 Physica E 42 2420
[17] Jang H W, Lee J L 2004 Appl. Phys. Lett. 85 5920
[18] Tian T, Wang L C, Guo E Q, Liu Z Q, Zhan T, Guo J X, Yi X Y, Li J, Wang G H 2014 J. Phys. D: Appl. Phys. 47 115102
[19] Mashaiekhy J, Shafieizadeh Z, Nahidi H 2012 Eur. Phys. J. Appl. Phys. 60 20301
[20] Song Y H, Son J H, Yu H K, Lee J H, Jung G H, Lee J Y, Lee J L 2011 Cryst. Growth Des. 11 2559
[21] Kim S, Jang J H, Lee J S 2007 J. Electrochem. Soc. 154 973
[22] Son J H, Yu H K, Song Y H, Kim B J, Lee J L 2011 Cryst. Growth Des. 11 4943
[23] Chou C H, Lin C L, Chuang Y C, Bor H Y, Liu C Y 2007 Appl. Phys. Lett. 90 022103