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氢和温度对质子辐照硅的正电子捕获的影响

熊兴民

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氢和温度对质子辐照硅的正电子捕获的影响

熊兴民

INFLUENCE OF HYDROGEN AND TEMPERATURE ON POSITRON TRAPPING IN PROTON-IRRADIATED SILICON

XIONG XING-MIN
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  • 用正电子湮没寿命测量研究了在3.2×1017cm-2和3.6×1016cm-2质子辐照硅单晶中的正电子捕获,观测到辐照诱导的捕获正电子的缺陷主要是双空位,辐照过程中高剂量样品的双空位基本上都捕获了氢,低剂量样品还有一小部分未捕获氢,在高剂量样品的两轮和低剂量样品的第一轮升温测量中都观测到双空位进一步捕获氢,含氢双空位的荷电态随温度升高在145K附近发生由负荷电向中性转变,它的负荷电态正电子寿命比中性态正电子寿命长,无论
    Positron lifetime measurements are used to investigate positron trapping in silicon irradiated with protons at a high dose of 3.2×1017cm-2 and a lower dose of 3.6×1016cm-2, respectively. The irradiation-induced vacancy defects are mainly divacancies. During the irradiations, the divacancies in high dose samles have almost trapped hydrogens, while a part of the divacancies in low dose samples have not trapped hydrogensyet. In the measurements of the two warm-up of high dosed samples and the first warm-up of low dose samples, the further trapping of hydrogens into divacancies is observed., With increasing temperature the charge state of the divacancies decorated by hydrogens takes a transition from negative to neutral around 145K. With increasing the amount of the trapped hydrogens per divacancy, the lifetimes of the negatively charged divacancy and the neutral one are both shortened, while both their trapping cross sections are increased. The trapping of hydrogens into the negatively charged divacancies has no influence on the temperature dependence of its trpping cross sections.
    • 基金项目: 中国科学院科学基金
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  • 文章访问数:  6025
  • PDF下载量:  458
  • 被引次数: 0
出版历程
  • 收稿日期:  1990-08-31
  • 刊出日期:  2005-07-03

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