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系统地研究了高JcBi-2223相银包套带材在0—1T磁场下的电阻转变展宽.实验结果表明,Bi-2223带材的电阻转变具有热激活的性质.研究了磁通钉扎势与温度的关系,得到电阻转变曲线的温度关系为R(T)=R0exp{-u0(1-T/Tc)n/kT},其中磁场平行于ab面时,n=4.5;磁场垂直于ab面时,n=3.在磁场平行于ab面时,耗散与Lorentz力无关,只与平行于ab面的磁场大小有关,这可The resistive transition broadening of high Jc Ag-sheathed Bi(2223) tape has been systematically investigated in the field range of 0 to 1T. The experimental result shows that the resistive transition is of the thermally activated behavior. The relation between the flux pinning and the temperature has been studied. The temperature dependence of resistance is R(T) = R0exp [-μ0(1-T/Tc)n/kT] ,where n=4.5 for H//ab plane and n=3 for H⊥ab plane. When the magnetic field is parallel to ab plane, the dissipation is independent of the Lorentz force and only depends on the magnitude of the magnetic field parallel to ab plane. This behavior can be explained in terms of thermally activated pancakelike vortex-an-tivortex pair model. The mechanism of the flux pinning of the Bi-system material is discussed .
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