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利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaNxAs1-x薄膜,并对图谱中所观察的光学跃迁进行了指认.在GaN0.005As0.995和GaN0.01As0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E1+Δ1+ΔN.当N掺杂浓度达到
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关键词:
- 压电调制反射光谱(PzR) /
- GaNxAs1-x薄膜 /
- 分子束外延(MBE)
Dilute GaNxAs1-x thin films with N concentration from 0.0% to 3% have been grown by molecular beam epitaxy. Piezomodulated reflectance (PzR) spectra of these thin films have been measured at room temperature, and optical transitions in PzR spectra have been well resolved. The N-related transition of E1+Δ1+ΔN had been observed in PzR spectrum of GaN0.005As0.995 and GaN0.01As0.99 films. The well resolved split between heavy hole and light hole of Γ valence band is shown in PzR when the N doping level is up to 1%. The N concentration dependence of transition energies supports the model that both E+ and E* originate from the L conductive band at room temperature.-
Keywords:
- piezomodulated reflectance /
- GaNxAs1-x films /
- molecular beam epitaxy
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