(La0.7Sr0.3MnO3 )m(BiFeO3)n 超晶格结构的导电机理

朱晖文; 姜平; 王顺利; 毛凌峰; 唐为华

doi:10.7498/aps.59.5710

摘要

利用射频磁控溅射的方法在SrTiO3(001) 基片上制备了(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构.对所制备的超晶格结构进行了50—150℃温度范围内的电流-电压测试分析.结果表明,随着BiFeO3薄膜的厚度减小,温度的升高,(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构的电流变大.进一步根据介质导电模型对(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构的导电特性做了分析.在温度较低或者电场较弱时,所制备的(La0.7Sr0.3MnO3)m(BiFeO3)n超晶格结构表现为欧姆导电,而在高温,高电场的情况下,其导电行为由空间电荷限制电流机理主导.

关键词:

Abstract

(La0.7Sr0.3MnO3)m(BiFeO3)n superlattices were grown in situ on SrTiO3(001) substrates by rf magnetron sputtering. The current-voltage measurements were performed under the temperature of 50—150℃ for the superlattices specimens. The analysis showed that the leakage current increased with increasing the temperature or decreasing the BFO thickness in the samples. And the conduction mechanisms of the prepared (La0.7Sr0.3MnO3)m(BiFeO3)n superlattices were analyzed according to common insulator conduction models. It exhibited that the space-charge-limited current were dominated in the as fabricated (La0.7Sr0.3MnO3)m(BiFeO3)n superlattices in high temperature or high electrical field.

Keywords:

作者及机构信息

(1)苏州大学电子信息学院,苏州 215021; (2)浙江理工大学物理系,光电材料与器件中心,杭州 310018

基金项目: 国家自然科学基金(批准号:50672088)和浙江省自然科学基金杰出青年研究团队(批准号:R4090058)资助的课题.

Authors and contacts

(1)Department of physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China; (2)School of Electronics and Information Engineering, Soochow University, Suzhou 215021, China

参考文献

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施引文献

[1]	Ramesh R, Spaldin N A, 2007 Nat Mater, 6 21
[2]	Fiebig M, Lottermoser Th, Frohlich D, Goltsev A V, Pisarev R V 2002 Nature, 419 818
[3]	Wang K F, Liu J M, Ren Z F, Multiferroicity, The coupling between magnetic and polarization. arXiv:0908.0662v1, 2009.
[4]	Filippetti A, Hill N A 2001 Journal of Magnetism and Magnetic Materials 236 176
[5]	Singh S K, Ishiwara H, Maruyama K 2006 Applied Physics Letters 88 262908
[6]	Tokura Y, Tomioka Y 1999 Journal of Magnetism and Magnetic Materials 200 1
[7]	Prellier W, Lecoeur P, Mercey B 2001 Condensed Matter 13 R915
[8]	Wang J W, Zhang Y, Jiang P, Tang W H 2009 Acta Phys. Sin. 58 4199 (in Chinese)[王君伟、张勇、姜平、唐为华 2009 物理学报 58 4199]
[9]	Bea H, Bibes M, Sirena M, Herranz G, Bouzehouane K, Jacquet E, Fusil S, Paruch P, Dawber M, Contour J P, Barthelemy A 2006 Appl. Phys. Lett. 88 062502
[10]	Bea H, Bibes M, Cherifi S, Nolting F, Warot-Fonrose B, Fusil S, Herranz G, Deranlot C, Jacquet E, Bouzehouane K, Barthelemy A 2006 Appl. Phys. Lett. 89 242114
[11]	Sheng J, Cai T Y, Guo G Y, Li Z Y 2008 Journal of Applied Physics 104 053904
[12]	Qi X, Dho J, Tomov R, Blamire M G, MacManus-Driscoll, J L 2005 Appl. Phys. Lett. 86 062903
[13]	Pabst G W, Martin L W, Chu Y H, Ramesh R 2007 Appl. Phys. Lett. 90 072902
[14]	Wang C, Takahashi M, Fujino H, Zhao X, Kume E, Horiuchi T, Sakai S 2006 Journal of Applied Physics 99 054104
[15]	Clark S J, Robertson J 2007 Appl. Phys. Lett. 90 132903
[16]	Ranjith R, Prellier W, Cheah J W, Wang J, Wu T 2008 Appl. Phys. Lett. 92 232905
[17]	Kudo T, Tachiki M, Kashiwai T, Kobayashi T 1998 Japanese Journal of Applied Physics. 37 L999
[18]	Barik U K, Srinivasan S, Nagendra C L, Subrahmanyam A 2003 Thin Solid Films 429 129
[19]	Simmons J G 1965 Physical Review Letters 15 967
[20]	Dawber M, Rabe K M, Scott J F 2005 Reviews of Modern Physics 77 1083
[21]	Scott J F 2006 Journal of Physics: Condensed Matter 18 R361
[22]	Nagaraj B, Aggarwal S, Song T K, Sawhney T, Ramesh R 1999 Physical Review B 59 16022
[23]	Zubko P, Jung D J, Scott J F 2006 Journal of Applied Physics 100 114113
[24]	Chaudhuri A R, Krupanidhi S B 2005 Journal of Applied Physics 98 094112
[25]	Bose S, Krupanidhi S B 2007 Applied Physics Letters 90 212902

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