-
SiGe heterojunction bipolar transistor (HBT) on thin film SOI has been successfully integrated with SOI CMOS by "folded collector". This paper deals with the collector of "partially depleted transistor" according to the thin film vertical SiGe HBT structure. A simplified circuit model including vertical and horizontal resistors and depletion capacitance is presented for the first time, and the model of the collector for field, voltage, and depletion width is systematically established. The model is analyzed with reasonable parameters. The results indicate that the space charge region consists of intrinsic junction depletion and MOS capacitance depletion, that the width of the space charge region increases with doping concentration of the collector, larger reverse junction voltage, and smaller substrate voltage, and that the region features a vertical expansion followed by a lateral expansion. This space charge region model of collector provides a valuable reference to the SiGe mm-wave BiCMOS circuit design and simulation on thin film SOI.
-
Keywords:
- SOI /
- SiGe HBT /
- collector /
- space charge region model
[1] Floyd B, Pfeiffer U, Reynolds S, Valdes-Garcia A, Haymes C, Katayama Y, Nakano D, Beukema T, Gaucher B, Soyuer M 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems SiRF07 Long Beach, CA, United states, 2007 p213
[2] Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099
[3] Shahidi G G 2002 IBM Journal of Research and Development 46 121
[4] Shahidi G G, Ajmera A, Assaderaghi F, Bolam R J, Leobandung E, Rausch W, Sankus D, Schepis D, Wagner L F, Kun W, Davari B 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, Piscataway, NJ, USA, Feb.15—17, 1999,p426
[5] Larson L E 2000 International Electron Devices Meeting, Technical Digest. IEDM, San Francisco, CA, USA, Dec. 10—13, 2000 p737
[6] Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada, T 2002 IEEE Trans ED 49 271
[7] Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Trans ED 46 1332
[8] Cai J, Ajmera A, Ouyang Q Q, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T H 2002 Symposium on VLSI Technology Digest of Technical Papers Honolulu, HI, United states, June 11—13, 2002 p172
[9] Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 IEEE Bipolar/BiCMOS Circuits and Technol. Meeting Santa Barbara, CA, USA, October 9—11, 2005, p128.
[10] Rücker H, Heinemann B, Barth R, Bolze D, Drews J, Fursenko O, Grabolla T, Haak U, Hppner W, Knoll D, Marschmeyer S, Mohapatra N, Richter H H, Schley P, Schmidt D, Tillack B, Weidner G, Wolansky D, Wulf H E, Yamamoto Y 2004 Technical Digest - International Electron Devices Meeting IEDM San Francisco CA, United states, Dec.13—15, 2004 p239
[11] Ouyang Q Q, Cai J, Ning T, Oldiges P, Jeffery B J 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technol. Meeting BCTM Minneapolis, United states, Sep.29—Oct. 1,2002 p28
[12] Cai J, Mahender K, Steigerwalt M, Ho H, Schonenberg K, Stein K, Chen H J, Jenkins K, Ouyang Q Q, Oldiges P, Ning T H 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Toulouse, France, 2003 p215
[13] Cai J, Ning T H 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings ICSICT Beijing, China, Oct. 18—21, 2004 p2102
[14] Avenier G, Chevalier P, Vandelle B, Lenoble D, Saguin F, Frégonèse S, Zimmer T, Chantre A 2005 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference Grenoble, France, Sep. 12—16, 2005 p133
[15] Avenier G, Frégonè S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585
[16] Avenier G, Diop M, Chevalier P, Troillard G, Loubet N, Bouvier J, Depoyan Linda, Derrier N, Buczko M, Leyris C, Boret S, Montusclat S, Margain A, Pruvost S, Nicolson S T, Yau K H K, Revil N, Gloria D, Dutartre D, Voinigescu S P, Chantre, A 2009 IEEE Journal of Solid-State Circuits 44 2312
[17] Chen T B, Bellini M, Zhao E H, Comeau J P, Sutton A K, Grens C M, Cressler J D, Cai J, Ning T H 2005 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Santa Barbara, CA, USA, Oct. 9—11, 2005 p256
[18] Bellini M, Cressler J D, Cai J 2007 Proc. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting BCTM Boston MA, USA, Sep. 30—Oct.2, 2007 p234
[19] Bellini M, Chen T B, Zhu C D, Cressler J D, Cai J 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Maastricht Netherlands Oct. 8—10 2006 p4
[20] Chen T B, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Liang Q Q, Cressler J D, Cai J, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353
[21] Vanhoucke T, Boots H M J, Van Noort W D 2004 IEEE Electron Device Letters 25 150
[22] Hu H Y, Zhang H M, Lü Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]
[23] Lü Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese)[吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]
[24] Toorn R V, Paasschenss J C J, Kloosterman W J 2008 The Mextram Bipolar Transistor Model level 504.7, Mextram definition document , 2008 Delft University of Technology
[25] Frégonè S, Avenier G, Maneux C, Chantre A 2006 IEEE Trans ED 53 296
[26] Kirk C T 1962 IRE Trans. Electron Devices 9 164
[27] Shi M, Wu G Y 2008 Semiconductor Device Physics (Xi'an: Xi'an Jiaotong University Press)p256—264(in Chinese)[施敏著 伍国珏译 2008 半导体器件物理(西安:西安交通大学出版社)第256—264页]
-
[1] Floyd B, Pfeiffer U, Reynolds S, Valdes-Garcia A, Haymes C, Katayama Y, Nakano D, Beukema T, Gaucher B, Soyuer M 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems SiRF07 Long Beach, CA, United states, 2007 p213
[2] Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099
[3] Shahidi G G 2002 IBM Journal of Research and Development 46 121
[4] Shahidi G G, Ajmera A, Assaderaghi F, Bolam R J, Leobandung E, Rausch W, Sankus D, Schepis D, Wagner L F, Kun W, Davari B 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, Piscataway, NJ, USA, Feb.15—17, 1999,p426
[5] Larson L E 2000 International Electron Devices Meeting, Technical Digest. IEDM, San Francisco, CA, USA, Dec. 10—13, 2000 p737
[6] Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada, T 2002 IEEE Trans ED 49 271
[7] Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Trans ED 46 1332
[8] Cai J, Ajmera A, Ouyang Q Q, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T H 2002 Symposium on VLSI Technology Digest of Technical Papers Honolulu, HI, United states, June 11—13, 2002 p172
[9] Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 IEEE Bipolar/BiCMOS Circuits and Technol. Meeting Santa Barbara, CA, USA, October 9—11, 2005, p128.
[10] Rücker H, Heinemann B, Barth R, Bolze D, Drews J, Fursenko O, Grabolla T, Haak U, Hppner W, Knoll D, Marschmeyer S, Mohapatra N, Richter H H, Schley P, Schmidt D, Tillack B, Weidner G, Wolansky D, Wulf H E, Yamamoto Y 2004 Technical Digest - International Electron Devices Meeting IEDM San Francisco CA, United states, Dec.13—15, 2004 p239
[11] Ouyang Q Q, Cai J, Ning T, Oldiges P, Jeffery B J 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technol. Meeting BCTM Minneapolis, United states, Sep.29—Oct. 1,2002 p28
[12] Cai J, Mahender K, Steigerwalt M, Ho H, Schonenberg K, Stein K, Chen H J, Jenkins K, Ouyang Q Q, Oldiges P, Ning T H 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Toulouse, France, 2003 p215
[13] Cai J, Ning T H 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings ICSICT Beijing, China, Oct. 18—21, 2004 p2102
[14] Avenier G, Chevalier P, Vandelle B, Lenoble D, Saguin F, Frégonèse S, Zimmer T, Chantre A 2005 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference Grenoble, France, Sep. 12—16, 2005 p133
[15] Avenier G, Frégonè S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585
[16] Avenier G, Diop M, Chevalier P, Troillard G, Loubet N, Bouvier J, Depoyan Linda, Derrier N, Buczko M, Leyris C, Boret S, Montusclat S, Margain A, Pruvost S, Nicolson S T, Yau K H K, Revil N, Gloria D, Dutartre D, Voinigescu S P, Chantre, A 2009 IEEE Journal of Solid-State Circuits 44 2312
[17] Chen T B, Bellini M, Zhao E H, Comeau J P, Sutton A K, Grens C M, Cressler J D, Cai J, Ning T H 2005 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Santa Barbara, CA, USA, Oct. 9—11, 2005 p256
[18] Bellini M, Cressler J D, Cai J 2007 Proc. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting BCTM Boston MA, USA, Sep. 30—Oct.2, 2007 p234
[19] Bellini M, Chen T B, Zhu C D, Cressler J D, Cai J 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Maastricht Netherlands Oct. 8—10 2006 p4
[20] Chen T B, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Liang Q Q, Cressler J D, Cai J, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353
[21] Vanhoucke T, Boots H M J, Van Noort W D 2004 IEEE Electron Device Letters 25 150
[22] Hu H Y, Zhang H M, Lü Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]
[23] Lü Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese)[吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]
[24] Toorn R V, Paasschenss J C J, Kloosterman W J 2008 The Mextram Bipolar Transistor Model level 504.7, Mextram definition document , 2008 Delft University of Technology
[25] Frégonè S, Avenier G, Maneux C, Chantre A 2006 IEEE Trans ED 53 296
[26] Kirk C T 1962 IRE Trans. Electron Devices 9 164
[27] Shi M, Wu G Y 2008 Semiconductor Device Physics (Xi'an: Xi'an Jiaotong University Press)p256—264(in Chinese)[施敏著 伍国珏译 2008 半导体器件物理(西安:西安交通大学出版社)第256—264页]
计量
- 文章访问数: 8830
- PDF下载量: 722
- 被引次数: 0
下载:
