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ZnO纳米线作为新型太阳能电池结构的重要组成部件之一, 其导电能力直接影响到太阳能电池的性能. 采用密度泛函理论平面波超软赝势方法, 计算并分析了C2H6O(乙醇)、C6H5FS(4-氟苯硫酚)、C7HF7S(4-(三氟甲基L)-2, 3, 5, 6-四氟硫代苯酚) 等小分子吸附的六边形结构0001 ZNWs (ZnO 纳米线) 的几何结构、 吸附能和电子结构. 首先, 通过几何优化得到了不同基团吸附的ZNWs的稳定结构, 同时吸附能计算结果表明C7HF7S吸附的体系结构最为稳定, 且吸附呈现放热反应; 其次, 为研究表面敏化对导电性能的影响, 计算了不同小分子基团吸附下的能带结构和态密度, 并利用能带理论分析了表面吸附敏化对禁带宽度的调控机理, 结果分析表明小分子表面吸附敏化对ZNWs的电学性能有一定的影响, 其中C7H7FS和C6H5FS分子均发生了不同程度的电荷转移.The electronic properties of the ZNWs (ZnO nanowire) as one of important part of novel SC (solar cells) are very important, which can greatly affect the performance of the SC. Based on the density function theory combined with the plane-wave ultra soft pseudo-potential method, the structures, the adsorption energies and the electronic structures of the C2H6O (ethanol), C6H5FS (4-fluoro-benzenethiol), C7HF7FS (2, 3, 5, 6- tetrafluoro-4-(trifluoromethyl) benzenethiol) clusters adsorbed (0001) hexangular ZNWs are calculated. Firstly, the most stable configuration is found out from different adsorbed ones based on the principle of lowest energy by calculating their total energy. The results also indicate that C7HF7FS adsorption is energetically favorable. Then, the densities of state and the electronic structures of different adsorbed systems are calculated. Furthermore, the mechanism for adjusting the band-gap of the absorbed system is investigated and the results indicate that the chemical modification of ZNWs with the small molecule groups results in little change in the electronic property of the system. Meanwhile, charge transfer takes place to a certain extent between the C7H7FS and C6H5FS.
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Keywords:
- density function theory /
- surface adsorption /
- ZnO nanowire /
- solar cell
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[11] Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052
[12] Zhang W, Li M K, Wei Q, Cao L, Yang Z, Qiao S S 2008 Acta Phys. Sin. 57 5887 (in Chinese) [张威, 李梦柯, 魏强, 曹璐, 杨志, 乔双双 2008 物理学报 57 5887]
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[14] Lyo I W, Kaxiras E, Avouris P 1989 Phys. Rev. Lett. 63 1261
[15] Briseno A L, Holcombe T W, Boukai A I, Garnett E C, Shelton S W, Frèchet J J M, Yang P 2009 Nano Lett. 10 334
[16] Wang L, Wong K, Du Z 2010 J. Phys. Chem. C 114 1959
[17] Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169
[18] Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[19] Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188
[20] Rohlfing M, Bredow T 2008 Phys. Rev. Lett. 101 266106
[21] Preuss M, Schmidt W, Bechstedt F 2004 J. Phys. Chem. B 108 7809
[22] Tomasulo A, Ramakrishna M V 1996 J. Chem. Phys. 105 3612
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[1] Wang Z L 2004 Mater. Today 7 26
[2] Jiang W, Gao H, Xu L L, Ma J N, Zhang E, Wei P, Lin J Q 2011 Chin. Phys. B 20 037307
[3] Maldonado F, Stashans A 2010 J. Phys. Chem. Solids 71 784
[4] Tang B, Deng H, Shui Z W, Wei M, Chen J J, Hao X 2007 Acta Phys. Sin. 56 5176 (in Chinese) [唐斌, 邓宏, 税正伟, 韦敏, 陈金菊, 郝昕 2007 物理学报 56 5176]
[5] Xu P S, Sun Y M, Shi C S, Xu F Q, Pan H B 2003 Nucl. Instrum. Methods Phys. Res. Sect. B 199 286
[6] Song S, Hong W K, Kwon S S, Lee T 2008 Appl. Phys. Lett. 92 263109
[7] Ng H T, Han J, Yamada T, Nguyen P, Chen Y P, Meyyappan M 2004 Nano Lett. 4 1247
[8] Chang Y L, Zhang Q F, Sun H, Wu J L 2007 Acta Phys. Sin. 56 2399(in Chinese) [常艳玲, 张琦峰, 孙晖, 吴锦雷 2007 物理学报 56 2399]
[9] Xu J Q, Pan Q Y, Shun Y A, Tian Z Z 2000 Sens. Actuators B 66 277
[10] Wang Z L 2004 Annu. Rev. Phys. Chem. 55 159
[11] Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052
[12] Zhang W, Li M K, Wei Q, Cao L, Yang Z, Qiao S S 2008 Acta Phys. Sin. 57 5887 (in Chinese) [张威, 李梦柯, 魏强, 曹璐, 杨志, 乔双双 2008 物理学报 57 5887]
[13] Xu C, Wang X, Wang Z L 2009 J. Am. Chem. Soc. 131 5866
[14] Lyo I W, Kaxiras E, Avouris P 1989 Phys. Rev. Lett. 63 1261
[15] Briseno A L, Holcombe T W, Boukai A I, Garnett E C, Shelton S W, Frèchet J J M, Yang P 2009 Nano Lett. 10 334
[16] Wang L, Wong K, Du Z 2010 J. Phys. Chem. C 114 1959
[17] Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169
[18] Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[19] Monkhorst H J, Pack J D 1976 Phys. Rev. B 13 5188
[20] Rohlfing M, Bredow T 2008 Phys. Rev. Lett. 101 266106
[21] Preuss M, Schmidt W, Bechstedt F 2004 J. Phys. Chem. B 108 7809
[22] Tomasulo A, Ramakrishna M V 1996 J. Chem. Phys. 105 3612
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