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In this paper, stable Li-doped ZnO solid solution (ZnO: Li) is successfully prepared by sintering the mixture of ZnO and Li2O powders under a pressure of 5 GPa and at temperatures between 1200 ℃ and 1500 ℃. It is found that the high pressure and temperature conditions have significant effects on the electrical conductivity and the structure of the ZnO solid solution. The best p-type ZnO doping 4.5 at.% Li with a resistivity of 3.1 10-1cm, carrier concentration of 3.3 1019cm-3, and mobility of 27.7 cm/Vs is achieved at 1500 ℃. The p-type conduction formed in ZnO is due to acceptor formed by one substitutional Li atom at Zn site, which has an acceptor level of 110 meV. Furthermore, the effects of pressure on formation and electrical properties of the p-type ZnO are discussed.
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Keywords:
- high pressure /
- p-ZnO: Li /
- solid solution
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[2] Wong E M, Searson P C 1999 Appl. Phys. Lett. 74 2939
[3] Ko H J, Chen Y F, Zhu Z, Yao T, Kobayashi I, Uchiki H 2000 Appl. Phys. Lett. 76 1905
[4] Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[5] Van de Walle C G 2000 Phys. Rev. Lett. 85 1012
[6] Ma Y M, Eremets M, Oganov A R, Xie Y, Trojan I 2009 Nature 458 182
[7] Hanfland M, Loa I, Syassen K 2002 Phys. Rev. B 65 184109
[8] Qin J M, Yao B, Yan Y, Zhang J Y, Jia X P, Zhang Z Z, Li B H, Shan C X, Shen D Z 2009 Appl. Phys. Lett. 95 022101
[9] Park C H, Zhang S B, Wei S H 2002 Phys. Rev. B 66 073202
[10] Kim E K, Kim Y S 2007 Superlattices and Microstructures 42 343
[11] Wang X H, Yao B, Cong C X, Wei Z P, Shen D Z, Zhang Z Z, Li B H, Lu Y M, Zhao D X, Zhang J Y, Fan X W, 2010 Thin Solid Films 518 3428
[12] Seko,A, Oba F, Kuwabara A, Tanaka I 2005 Phys. Rev. B 72 024107
[13] Yamamoto T, Katayama H, Yoshida H K, 2000 J. Cryst. Growth. 215 552
[14] Tsukamoto K, Yamagishi C, Koumoto K, Hiroaki Y, 1984 J. Mater. Sci. 19 2493
[15] Zeng Y J, Ye Z Z, Lu J G, XuWZ, Zhu L P, Zhao B H 2006 Appl. Phys. Lett. 89 042106
[16] Lu J G, Zhang Y Z, Ye Z Z, Zeng Y J, He H P, Zhu L P, Huang J Y, Wang L, Yuan J, Zhao B H, Li X H 2006 Appl. Phys. Lett. 89 112113
[17] Qin J M, Wang H, Zeng F M, Li J L,Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
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[1] Choopun S, Vispute R D, Noch W, Balsamo A, Sharma R P, Venkatesan T, Iliadis A, Look D C 1999 Appl. Phys. Lett. 75 3947
[2] Wong E M, Searson P C 1999 Appl. Phys. Lett. 74 2939
[3] Ko H J, Chen Y F, Zhu Z, Yao T, Kobayashi I, Uchiki H 2000 Appl. Phys. Lett. 76 1905
[4] Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205
[5] Van de Walle C G 2000 Phys. Rev. Lett. 85 1012
[6] Ma Y M, Eremets M, Oganov A R, Xie Y, Trojan I 2009 Nature 458 182
[7] Hanfland M, Loa I, Syassen K 2002 Phys. Rev. B 65 184109
[8] Qin J M, Yao B, Yan Y, Zhang J Y, Jia X P, Zhang Z Z, Li B H, Shan C X, Shen D Z 2009 Appl. Phys. Lett. 95 022101
[9] Park C H, Zhang S B, Wei S H 2002 Phys. Rev. B 66 073202
[10] Kim E K, Kim Y S 2007 Superlattices and Microstructures 42 343
[11] Wang X H, Yao B, Cong C X, Wei Z P, Shen D Z, Zhang Z Z, Li B H, Lu Y M, Zhao D X, Zhang J Y, Fan X W, 2010 Thin Solid Films 518 3428
[12] Seko,A, Oba F, Kuwabara A, Tanaka I 2005 Phys. Rev. B 72 024107
[13] Yamamoto T, Katayama H, Yoshida H K, 2000 J. Cryst. Growth. 215 552
[14] Tsukamoto K, Yamagishi C, Koumoto K, Hiroaki Y, 1984 J. Mater. Sci. 19 2493
[15] Zeng Y J, Ye Z Z, Lu J G, XuWZ, Zhu L P, Zhao B H 2006 Appl. Phys. Lett. 89 042106
[16] Lu J G, Zhang Y Z, Ye Z Z, Zeng Y J, He H P, Zhu L P, Huang J Y, Wang L, Yuan J, Zhao B H, Li X H 2006 Appl. Phys. Lett. 89 112113
[17] Qin J M, Wang H, Zeng F M, Li J L,Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
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