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非晶FexZn1-xO薄膜的结构、磁性和电性能

王锋 潘荣萱 林海容

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非晶FexZn1-xO薄膜的结构、磁性和电性能

王锋, 潘荣萱, 林海容

Structural, magnetic and electrical properties in FexZn1-xO amorphous films

Wang Feng, Pan Rong-Xuan, Lin Hai-Rong
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  • 采用射频共溅射方法制备了FexZn1-xO (x=0.80, 0.86, 0.93)非晶薄膜, 该薄膜具有较强的室温铁磁性, 制备态的Fe0.93Zn0.07O 的饱和磁化强度Ms可达333.29 emu/cm3, 磁性能是各向同性的. 与多晶的FexZn1-xO (x≤ 20%)不同的是样品出现了明显的异常霍尔效应(AHE), 样品均为n型半导体, 载流子浓度约为1019—1020 cm-3. 退火后的样品在低温222 K 下存在着电阻极小值现象. 薄膜的低温电阻导电机理属于自旋依赖的电子变程跃迁机理, 上述实验结果表明高Fe含量的非晶FeZnO体系有作为新型自旋电子学器件材料的可能.
    The FexZn1-xO (x=0.80, 0.86, 0.93)amorphous films were fabricated by RF sputtering method. The films each have a strong ferromagnetism at room temperature. The saturation magnetization Ms can reacl 333.29 emu/cm3 in the as-sputtered Fe0.93Zn0.07O. Magnetism is isotropic. The sample obviously exhibits an anomalous Hall effect, which is different from the polycrystalline FexZn1-xO (x≤ 20%). The samples are of n-type semiconductor, with a carrier concentration of about 1019—1020 cm-3. After being annealed, the samples each present a resistance minimum phenomenon at a low temperature (222 K). The conductive mechanism is of the spin dependent variable range hopping resistance in the low-temperature. The experimental results show that amorphous FeZnO system of high Fe composition is a potential candidate of the new spintronic device materials.
    • 基金项目: 福建省自然科学基金(批准号: 2010J01305,E0510027)、泉州市科技项目计划(批准号: 2009G8 )和福建省高校服务海西建设重点项目(批准号: A100)资助的课题.
    • Funds: Project supported by the Natural Science Foundation of Fujian Province, China (Grant Nos. 2010J01305, E0510027), the Science and Technology Program of Quanzhou, China (Grant No. 2009G8), and the University Service West Coast of Fujian Province, China (Grant No. A100).
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  • [1]

    Ohno H 1998 Science 281 951

    [2]

    Sato K, Bergqvist L, Kudrnovský J, Dederichs P H, Eriksson O, Turek I, Sanyal B, Bouzerar G, Katayama-Yoshida H, Dinh V A, Fukushima T, Kizaki H, Zeller R 2010 Rev. Mod. Phys. 82 1633

    [3]

    Editorial Staff 2005 Science 309 82

    [4]

    Dietal T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019

    [5]

    Zener C 1951 Phys. Rev. 81 440

    [6]

    Sato K, Yoshida H K 2000 Jpn. J. Appl. Phys. 39 L555

    [7]

    Chambers S A 2006 Surf. Sci. Reports 61 345

    [8]

    Pan F, Ding B F, Fa T, Cheng F F, Zhou Sh Q, Yao Sh D 2011 Acta. Phys. Sin. 60 108501 (in Chinese) [潘峰, 丁斌峰, 法涛, 成枫锋, 周生强, 姚淑德 2011 物理学报 60 108501]

    [9]

    Kataoka T, Kobayashi M, Sakamoto Y, Song G S, Fujimori A, Chang F H, Lin H J, Huang D J, Chen C T, Ohkochi T, Takeda Y, Okane T, Saitoh Y, Yamagami H, Tanaka A, Mandal S K, Nath T K, Karmakar D, Dasgupta I 2010 J. Appl. Phys. 107 033718

    [10]

    Yoon S W, Cho S B, We S C, Yoon S, Suh B J 2003 J. Appl. Phys. 93 7879

    [11]

    Shim J H, Hwang T, Lee S, Park J H, Han S J, Jeong Y H 2005 Appl. Phys. Lett. 86 082503

    [12]

    Shinagawa T, Izaki M, Inui H, Murase K, Awakura Y 2005 J. ElectroChem. Soc. 152 G736

    [13]

    Sato K, Yoshida H K 2001 Physica B 308-310 904

    [14]

    Debernardi A, Fanciulli M 2011 Phys. Rev. B 84 024415

    [15]

    Debernardi A, Fanciulli M 2007 Appl. Phys. Lett. 90 212510

    [16]

    Deng B, Guo Zh Y, Sun H Q 2010 Appl. Phys. Lett. 96 172106

    [17]

    Park M S, Min B I 2003 Phys. Rev. B 68 224436

    [18]

    Yan Sh Sh, Mei L M, Chen Y X, Liu G L, Song H Q, Zhang Y P, Tian Y F, Qiao R M 2011 J. Shandong University (Natural Science) 46 81 (in Chinese) [颜世申, 梅良模, 陈延学, 刘国磊, 宋红强, 张云鹏, 田玉峰, 乔瑞敏 2011 山东大学学报(理学版) 46 81]

    [19]

    Liu H J, Yao K, Yang P, Du Y H, He Q, Gu Y L, Li X L, Wang S S, Zhou X T, Wang J 2010 Phys. Rev. B 82 064108

    [20]

    Wang Y X, Wang J, Li H H, Li R P, Guo Y X 2005 Acta. Phys. Sin. 54 5474 (in Chinese) [王雅新, 王劼, 李红红, 李锐鹏, 郭玉献 2005 物理学报 54 5474]

    [21]

    Liu X Ch, Chen Zh Zh, Shi E W, Liao D Q, Zhou K J 2011 Chin. Phys. B 20 037501

    [22]

    Kapplus R, Luttinger J M 1954 Phys. Rev. 95 1154

    [23]

    Lee W L, Watauchi S, Miller V L, Cava R J, Ong N P 2004 Science 303 1647

    [24]

    Philip J, Punnoose A, Kim B I, Reddy K M, Layne S, Holmes J O, Satpati B, LeClair P R, Santos T S, Moodera J S 2006 Nat. Mater. 5 298

    [25]

    Han S J, Song J W, Yang C H, Park S H, Park J H. Jeong Y H, Rhie K W 2002 Appl. Phys. Lett. 81 4212

    [26]

    Wang F, Huang W W, Li Sh Y, Lian A Q, Zhang X T, Cao W 2012 J. Magn. Magn. Mater. for submitted

    [27]

    Kittel C, translated by Xiang J Z, Wu X H 2005 Introduction to Solid State Physics (Beijing: Chemical Industry Press) p132 (in Chinese) [Kittel C 著, 项金钟, 吴兴惠译, 2005 固体物理学导论 (北京: 化学工业出版社) 第132页]

    [28]

    Song C, Zeng F, Geng K W, Liu X J, Pan F, He B, Yan W S 2007 Phys. Rev. B 76 045215

    [29]

    Song C, Zeng F, Shen Y X, Geng K W, Xie Y N, Wu Z Y, Pan F 2006 Phys. Rev. B 73 172412

    [30]

    Coey J M D, Venkatesan M, Fitzgerald C B 2005 Nat. Mater. 4 173

    [31]

    Anderson P W 1958 Phys. Rev. 109 1492

    [32]

    Yan S S, Liu J P, Mei L M, Tian Y F, Song H Q, Chen Y X, Liu G L 2006 J. Phys. Condensed Matter 18 10469

    [33]

    Tian Y F, Yan Sh Sh, Zhang Y P, Song H Q, Ji G, Liu G L, Chen Y X, Mei L M, Liu J P, Altuncevahir B, Chakka V 2006 J. Appl. Phys. 100 103901-1

    [34]

    Huang K, revised by Hang R Q 1988 Solid State Physics (Beijing: Higher Education Press) p315 (in Chinese) [黄昆原著, 韩汝琦改编 1988 固体物理学 (北京: 高等教育出版社)第323页]

    [35]

    Sun N K, Li Y B, Li D, Zhang Q, Du J, Xiong,D K, Zhang W S, Ma S, Liu J J, Zhang Z D 2007 Journal of Alloys and Compounds. 429 29

    [36]

    Zhao B, Kaspar T C, Droubay T C, McCloy J, Bowden M E, Shutthanandan V, Heald S M, Chambers S A 2011 Phys. Rev. B 84 0245325

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出版历程
  • 收稿日期:  2012-05-07
  • 修回日期:  2012-07-05
  • 刊出日期:  2012-12-05

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