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硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究

张铮 徐智谋 孙堂友 何健 徐海峰 张学明 刘世元

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硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究

张铮, 徐智谋, 孙堂友, 何健, 徐海峰, 张学明, 刘世元

The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties

Zhang Zheng, Xu Zhi-Mou, Sun Tang-You, He Jian, Xu Hai-Feng, Zhang Xue-Ming, Liu Shi-Yuan
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  • 硅表面固有的菲涅耳反射, 使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉, 严重影响着器件的光电转换效率. 寻找一种方法降低硅基表面的反射率, 进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术, 在2 英寸单晶硅表面制备出周期530 nm, 高240 nm的二维六角截顶抛面纳米柱阵列结构. 反射率的测试表明, 当入射光角度为8° 时, 有纳米结构的硅片相对于无纳米 结构的硅片来讲, 在400到2500 nm波长范围内的反射率有很明显的降低, 其中, 800到2000 nm波段的反射率都小于10%, 在波长1360 nm附近的反射率由31%降低为零. 结合等效介质理论和严格耦合波理论对结果进行了分析和验证.
    The intrinsic Fresnel reflection of Si surface, which causes more than 30% of the incident light to be reflected back from the surface, seriously influences the photoelectric conversion efficiency of Si-based semiconductor photoelectric device, such as solar cell and infrared detector. Recently, how to find a simple and efficient method, which is also suitable for mass production, aiming to suppress the undesired reflectivity and therefore improving the efficiency of the device, has become a research focus. In this work, we successfully convert a 2D nanopillar array structure into the Si surface via the nanoimprint lithography. The nanopillar has a flat surface and a paraboloid-like side wall profile. The period and the height of the hexagonal array structure are 530 nm and 240 nm, respectively. The cut-paraboloid nanopillar structure generates a relatively smooth gradient of the refractive index in the optical interface, which plays a key role in suppressing the Fresnel reflection in a wide range of wavelength. The reflectivity of the nanopillar arrayed Si surface is tested in a wavelength range from 400 to 2500 nm at an incident angle of 8° during the measurement. Compared with the unstructured Si, the structured Si has a reflectivity that significantly decreases in the test area: in a wavelength range from 400 to 1200 nm, and the reflectivity of the silicon surface is less than 10%. Specifically, the reflectivity is almost zero at a wavelength of about 1360 nm. The results are confirmed with the effective medium and rigorous coupled-wave theory.
    • 基金项目: 国家自然科学基金(批准号: 61076042, 60607006);国家重大科学仪器设备开发专项(批准号: 2011YQ16000205) 和国家高技术研究发展计划(批准号: 2011AA03A106)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042, 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A106).
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  • [1]

    Huen T 1979 Appl. Opt. 18 1927

    [2]

    Doshi P, Jellison G E, Rohatgi A 1997 Appl. Opt. 36 7826

    [3]

    Kuo M L, Poxson D J, Kim Y S, Mont F W, Kim J K, Schu-bert E F, Lin S Y 2008 Opt. Lett. 33 2527

    [4]

    Song Y M, Choi H J, Yu J S, Lee Y T 2010 Opt. Express 18 13063

    [5]

    Bernhard C G, Miller W H 1962 Acta Physiol. Scand. 56 385

    [6]

    Boden S A, Bagnall D M 2008 Appl. Phys. Lett. 93 133108

    [7]

    Chen Q, Hubbard G, Shields P A, Liu C, Allsopp D W E, Wang W N, Abbott S 2009 Appl. Phys. Lett. 94 263118

    [8]

    Tsai M A, Tseng P C, Chen H C, Kuo H C, Yu P C 2011 Opt. Express 19 A28

    [9]

    Kanamori Y, Hane K, Sai H, Yugami H 2001 Appl. Phys. Lett. 78 142

    [10]

    Srivastava S K, Kumar D, Singh P K, Kar M, Kumar V, Husain M 2010 Sol. Energ. Mat. Sol. C 94 1506

    [11]

    Ishimori M, Kanamori Y, Sasaki M, Hane K 2002 Jpn. J. Appl. Phys. 41 4346

    [12]

    Trompoukis C, Herman A, Daif Ei O, Depauw V, van Geste D, Nieuwenhuysen K, Gordon I, Deparis O, Poortmans J 2012 Proc. SPIE 8438 84380R

    [13]

    Sun T Y, Xu Z M, Wang S B, Zhao W N, Wu X H, Liu S S, Liu W, Peng J, Wang Z H, Zhang X M, He J 2013 J. Nanosci. Nanotechnol. 13 1871

    [14]

    Peng J, Xu Z M, Wu X F, Sun T Y 2013 Acta Phys. Sin. 62 036104 (in Chinese) [彭静, 徐智谋, 吴小峰, 孙堂友 2013 物理学报 62 036104 ]

    [15]

    Ahn S H, Guo L J 2009 ACS Nano 3 2304

    [16]

    Wang L, Liu W, Zhang Y W, Qiu F, Zhou N, Wang D L, Xu Z M, Zhao Y L, Yu Y L 2012 Microelectron. Eng. 93 43

    [17]

    Stavenga D G, Foletti S, Palasantzas G, Arikawa K 2006 P. Roy. Soc. B: Biol. Sci. 273 661

    [18]

    Ji S, Park J, Lim H 2012 Nanoscale 4 4603

    [19]

    Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 物理学报 57 514]

    [20]

    Hadobas K, Kirsch S, Carl A, Acet M, Wassermann E F 2000 Nanotechnology 11 161

    [21]

    Lin Y R, Lai K Y, Wang H P, He J H 2010 Nanoscale 2 2765

    [22]

    Leem J W, Song Y M, Lee Y T, Yu J S 2010 Appl. Phys. B 100 89

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出版历程
  • 收稿日期:  2013-03-27
  • 修回日期:  2013-05-02
  • 刊出日期:  2013-08-05

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