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AuPd纳米粒子作为催化剂制备硼纳米线及其场发射性质

杨秀清 胡亦 张景路 王艳秋 裴春梅 刘飞

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AuPd纳米粒子作为催化剂制备硼纳米线及其场发射性质

杨秀清, 胡亦, 张景路, 王艳秋, 裴春梅, 刘飞

Preparation of boron nanowires using AuPd nanoparticles as catalyst and their field emission behavios

Yang Xiu-Qing, Hu Yi, Zhang Jing-Lu, Wang Yan-Qiu, Pei Chun-Mei, Liu Fei
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  • 利用化学气相沉积法,采用不同组分的金属合金纳米粒子AuPd作为催化剂,在Si(111)基底上成功制备大面积、高密度的硼纳米线薄膜. 纳米线的平均长度约为10 μm,直径在50–130 nm之间. 结构分析表明,纳米线为单晶结构,硼纳米线的直径随着元素Pd在合金催化剂中比例的增加而减少. 场发射特性测试结果表明,通过调整催化剂组分可以实现对硼纳米线的尺寸和密度的调控.
    Large-area boron nanowires are successfully prepared by chemical vapor deposition using different compositions of AuPd bimetal nanoparticles as catalysts. The lengths of the boron nanowires are in a range of 5–10 μm and their average diameter is 50 nm. Structural and morphology analysis indicate that these nanowires are single crystalline with a β-rhombohedral structure. The diameters of nanowires gradually decrease with the increase of the concentration of Pd in bimetal nanoparticles. Field emission results show that the field emission properties of boron nanowires can be tuned through using different diameters and densities of boron nanowires.
    • 基金项目: 国家自然科学基金(批准号:50872147)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 50872147).
    [1]

    Iijima S 1991 Nature 354 56

    [2]

    de Heer W A, Chatelain A, Ugarte D 1995 Science 270 1179

    [3]

    Hu J T, Wang T R, Lieber C M 1999 Acc. Chem. Res. 32 435

    [4]

    Wang Z L 2003 Adv. Mater. 15 432

    [5]

    Lu J G, Chang P C, Fan Z Y 2006 Mater. Sci. Eng. R 52 49

    [6]

    Quandt A, Boustani I 2005 Chem. Phys. Chem. 6 2001

    [7]

    Wu J Z, Yun S H, Dibos A, Kim D K, Tidrow M 2003 Microelectronics J. 34 463

    [8]

    Wu Y Y, Messer B, Yang P D 2001 Adv. Mater. 13 1487

    [9]

    Otten C J, Lourie O R, Yu M F, Cowley J M, Dyer M J, Ruoff R S, Buhro W E 2002 J. Am. Chem. Soc. 124 4564

    [10]

    Franz R, Werheit H 1989 Europhys. Lett. 9 145

    [11]

    Boustani I, Quandt A, Herna'ndez E, Rubio A 1999 J. Chem. Phys. 110 3176

    [12]

    Tang H, Ismail-Beigi S 2007 Phys. Rev. Lett. 99 115501

    [13]

    Liu F, Shen C M, Su Z J, Ding X L, Deng S Z, Chen J, Xu N S, Gao H J 2010 J. Mater. Chem. 20 2197

    [14]

    Tian J F, Xu Z C, Shen C M, Liu F, Xu N S, Gao H J 2010 Nanoscale 2 1375

    [15]

    Wang D W, Lu J G, Otten C J, Buhro W E 2003 Appl. Phys. Lett. 83 5280

    [16]

    Cao L M, Zhang Z, Sun L L, He M, Wang Y Q, Li Y C, Zhang X Y, Li G, Zhang J, Wang W K 2001 Adv. Mater. 13 1701

    [17]

    Kirihara K, Wang Z, Kawaguchi K, Shimizu Y, Sasaki T, Koshizaki N, Sogac K, Kimura K 2005 Appl. Phys. Lett. 86 212101

    [18]

    Liu F, Tian J F, Bao L H, Yang T Z, Shen C M, Xu N S, Gao H J 2008 Adv. Mater. 20 2609

    [19]

    Tian J F, Cai J M, Hui C, Zhang C D, Bao L H, Gao M, Shen C M, Gao H J 2008 Appl. Phys. Lett. 93 122105

    [20]

    Bao L H, Li C, Tian Y, Tian J F, Hui C, Wang X J, Shen C M, Gao H J 2008 Chin. Phys. B 17 4585

    [21]

    Wang X J, Tian J F, Yang T Z, Bao L H, Hui C, Shen C M, Gao H J 2007 Adv. Mater. 19 4480

    [22]

    Bao L H, Li C, Tian Y, Tian J F, Hui C, Wang X J, Shen C M, Gao H J 2008 Chin. Phys. B 17 4247

    [23]

    Wang X J, Tian J F, Bao L H, Yang T Z, Hui C, Liu F, Shen C M, Xu N S, Gao H J 2008 Chin. Phys. B 17 3827

    [24]

    Li C, Tian Y, Wang D K, Shi X Z, Hui C, Shen C M, Gao H J 2011 Chin. Phys. B 20 037903

    [25]

    Qian W, Liu T, Wang Z, Yu H, Li Z, Wei F, Luo G 2003 Carbon 41 2487

    [26]

    Tsoufis T, Xidas P, Jankovic L, Gournis D, Saranti A, Bakas T, Karakassides M A 2007 Diamond Rela ted Mater. 16 155

    [27]

    Reyhani A, Mortazavi S Z, Akhavan O, Moshfegh A Z, Lahooti S 2007 Appl. Surf. Sci. 253 8458

    [28]

    Mortazavi S Z, Reyhani A, Irajizad A 2008 Appl. Sur. Sci. 254 6416

    [29]

    Khan Z H, Islam S S, Kung S C, Perng T P, Khan S, Tripathi K N, Agarwal M, Zulfequar M, Husain M 2006 Physica B 373 317

    [30]

    Chen C M, Dai Y M, Huang J G, Jehng J M 2006 Carbon 44 1808

    [31]

    Huang Z P, Wang D Z, Wen J G, Sennett M, Gibson H, Ren Z F 2002 Appl. Phys. A 74 387

    [32]

    Tian Y, Shen C M, Li C, Shi X Z, Huang Y, Gao H J 2011 Nano Res. 4 780

    [33]

    Scott R W J, Wilson O M, Oh S K, Kenik E A, Crooks R M 2004 J. Am. Chem. Soc. 126 15583

    [34]

    Hou W B, Dehm N A, Scott R W J 2008 J. Catal. 253 22

    [35]

    Jiang J H, Kucernak A 2009 Electrochim. Acta 54 4545

    [36]

    Shen C M, Hui C, Yang T Z, Xiao C W, Tian J F, Bao L H, Chen S T, Ding H, Gao H J 2008 Chem. Mater. 20 6939

    [37]

    Chen B, Wu P 2005 Carbon 43 3172

    [38]

    Hart A J, Slocum A H, Royer L 2006 Carbon 44 348

    [39]

    Liu Z Q, Pan Z W, Sun L F, Tang D S, Zhou W Y, Wang G, Qian L X, Xie S S 2000 J. Phys. Chem. Solids 61 1171

    [40]

    Moshfegh A Z 2009 J. Phys. D: Appl. Phys. 42 233001

    [41]

    JCPDS-International Center for Diffraction Data, PCPDFWIN, v.2.1, 2000

    [42]

    Stratton R 1955 Proc. Phys. Soc. B 68 746

    [43]

    Fowler R H, Nordheim L 1928 Roc. Roy. Soc. London A 119 173

    [44]

    Li S Q, Liang Y X, Wang T H 2006 Appl. Phys. Lett. 88 053107

  • [1]

    Iijima S 1991 Nature 354 56

    [2]

    de Heer W A, Chatelain A, Ugarte D 1995 Science 270 1179

    [3]

    Hu J T, Wang T R, Lieber C M 1999 Acc. Chem. Res. 32 435

    [4]

    Wang Z L 2003 Adv. Mater. 15 432

    [5]

    Lu J G, Chang P C, Fan Z Y 2006 Mater. Sci. Eng. R 52 49

    [6]

    Quandt A, Boustani I 2005 Chem. Phys. Chem. 6 2001

    [7]

    Wu J Z, Yun S H, Dibos A, Kim D K, Tidrow M 2003 Microelectronics J. 34 463

    [8]

    Wu Y Y, Messer B, Yang P D 2001 Adv. Mater. 13 1487

    [9]

    Otten C J, Lourie O R, Yu M F, Cowley J M, Dyer M J, Ruoff R S, Buhro W E 2002 J. Am. Chem. Soc. 124 4564

    [10]

    Franz R, Werheit H 1989 Europhys. Lett. 9 145

    [11]

    Boustani I, Quandt A, Herna'ndez E, Rubio A 1999 J. Chem. Phys. 110 3176

    [12]

    Tang H, Ismail-Beigi S 2007 Phys. Rev. Lett. 99 115501

    [13]

    Liu F, Shen C M, Su Z J, Ding X L, Deng S Z, Chen J, Xu N S, Gao H J 2010 J. Mater. Chem. 20 2197

    [14]

    Tian J F, Xu Z C, Shen C M, Liu F, Xu N S, Gao H J 2010 Nanoscale 2 1375

    [15]

    Wang D W, Lu J G, Otten C J, Buhro W E 2003 Appl. Phys. Lett. 83 5280

    [16]

    Cao L M, Zhang Z, Sun L L, He M, Wang Y Q, Li Y C, Zhang X Y, Li G, Zhang J, Wang W K 2001 Adv. Mater. 13 1701

    [17]

    Kirihara K, Wang Z, Kawaguchi K, Shimizu Y, Sasaki T, Koshizaki N, Sogac K, Kimura K 2005 Appl. Phys. Lett. 86 212101

    [18]

    Liu F, Tian J F, Bao L H, Yang T Z, Shen C M, Xu N S, Gao H J 2008 Adv. Mater. 20 2609

    [19]

    Tian J F, Cai J M, Hui C, Zhang C D, Bao L H, Gao M, Shen C M, Gao H J 2008 Appl. Phys. Lett. 93 122105

    [20]

    Bao L H, Li C, Tian Y, Tian J F, Hui C, Wang X J, Shen C M, Gao H J 2008 Chin. Phys. B 17 4585

    [21]

    Wang X J, Tian J F, Yang T Z, Bao L H, Hui C, Shen C M, Gao H J 2007 Adv. Mater. 19 4480

    [22]

    Bao L H, Li C, Tian Y, Tian J F, Hui C, Wang X J, Shen C M, Gao H J 2008 Chin. Phys. B 17 4247

    [23]

    Wang X J, Tian J F, Bao L H, Yang T Z, Hui C, Liu F, Shen C M, Xu N S, Gao H J 2008 Chin. Phys. B 17 3827

    [24]

    Li C, Tian Y, Wang D K, Shi X Z, Hui C, Shen C M, Gao H J 2011 Chin. Phys. B 20 037903

    [25]

    Qian W, Liu T, Wang Z, Yu H, Li Z, Wei F, Luo G 2003 Carbon 41 2487

    [26]

    Tsoufis T, Xidas P, Jankovic L, Gournis D, Saranti A, Bakas T, Karakassides M A 2007 Diamond Rela ted Mater. 16 155

    [27]

    Reyhani A, Mortazavi S Z, Akhavan O, Moshfegh A Z, Lahooti S 2007 Appl. Surf. Sci. 253 8458

    [28]

    Mortazavi S Z, Reyhani A, Irajizad A 2008 Appl. Sur. Sci. 254 6416

    [29]

    Khan Z H, Islam S S, Kung S C, Perng T P, Khan S, Tripathi K N, Agarwal M, Zulfequar M, Husain M 2006 Physica B 373 317

    [30]

    Chen C M, Dai Y M, Huang J G, Jehng J M 2006 Carbon 44 1808

    [31]

    Huang Z P, Wang D Z, Wen J G, Sennett M, Gibson H, Ren Z F 2002 Appl. Phys. A 74 387

    [32]

    Tian Y, Shen C M, Li C, Shi X Z, Huang Y, Gao H J 2011 Nano Res. 4 780

    [33]

    Scott R W J, Wilson O M, Oh S K, Kenik E A, Crooks R M 2004 J. Am. Chem. Soc. 126 15583

    [34]

    Hou W B, Dehm N A, Scott R W J 2008 J. Catal. 253 22

    [35]

    Jiang J H, Kucernak A 2009 Electrochim. Acta 54 4545

    [36]

    Shen C M, Hui C, Yang T Z, Xiao C W, Tian J F, Bao L H, Chen S T, Ding H, Gao H J 2008 Chem. Mater. 20 6939

    [37]

    Chen B, Wu P 2005 Carbon 43 3172

    [38]

    Hart A J, Slocum A H, Royer L 2006 Carbon 44 348

    [39]

    Liu Z Q, Pan Z W, Sun L F, Tang D S, Zhou W Y, Wang G, Qian L X, Xie S S 2000 J. Phys. Chem. Solids 61 1171

    [40]

    Moshfegh A Z 2009 J. Phys. D: Appl. Phys. 42 233001

    [41]

    JCPDS-International Center for Diffraction Data, PCPDFWIN, v.2.1, 2000

    [42]

    Stratton R 1955 Proc. Phys. Soc. B 68 746

    [43]

    Fowler R H, Nordheim L 1928 Roc. Roy. Soc. London A 119 173

    [44]

    Li S Q, Liang Y X, Wang T H 2006 Appl. Phys. Lett. 88 053107

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出版历程
  • 收稿日期:  2013-09-25
  • 修回日期:  2013-10-30
  • 刊出日期:  2014-02-05

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