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采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位 置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉. 测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构. 对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究. 此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰. 还对磷掺杂ZnO纳米结构/n-Si异质结I-V 曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.One-dimensional phosphorus doped ZnO nanowires and nanonails are prepared on Si substrate without employing any metal catalyst by chemical vapor deposition method. Field-emission scanning electron microscopy shows that the samples located downstream 1.5 cm away from the source material are of nanowire structure and located 1 cm above source materials of nanonail structure, and the growth mechanisms of phosphorus doped ZnO nanostructures with different morphologies are discussed. The photoluminescence properties of phosphorus doped ZnO nanowires and nanonails are studied at a temperature of 10 K. The phosphorus related acceptor emissions are observed. Furthermore, the current-voltage (I-V) measurement based on the ZnO nanostructures/Si heterojunctions shows a typical semiconductor rectification characteristic with positive open electric fields being 4.8 and 3.2 V, respectively.
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Keywords:
- chemical vapor deposition /
- phosphorus doped ZnO /
- nanomaterials /
- substrate position
[1] Chen X M, Gao X Y, Zhang S, Liu H T 2013 Acta Phys. Sin. 62 049102 (in Chinese) [陈先梅, 郜小勇, 张飒, 刘红涛 2013 物理学报 62 049102]
[2] Feng Q J, Jiang J Y, Tang K, L J Y, Liu Y, Li R, Guo H Y, Xu K, Song Z, Li M K 2013 Acta Phys. Sin. 62 057802 (in Chinese) [冯秋菊, 蒋俊岩, 唐凯, 吕佳音, 刘洋, 李荣, 郭慧颖, 徐坤, 宋哲, 李梦轲 2013 物理学报 62 057802]
[3] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]
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[5] Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S, Lee S T 2008 Nano Lett. 8 2591
[6] Liu W, Xiu F X, Sun K, Xie Y H, Wang K L, Wang Y, Zou J, Yang Z, Liu J L 2010 J. Am. Chem. Soc. 132 2498
[7] Umar A, Hahn Y B 2006 Appl. Phys. Lett. 88 173120
[8] Li W J, Shi E W, Zhong W Z, Yin Z W 1999 J. Cryst. Growth 203 186
[9] Fan D H, Zhang R, Wang X H 2010 Physica E 42 2081
[10] Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L 2005 Appl. Phys. Lett. 87 252102
[11] Geng C, Jiang Y, Yao Y, Meng X, Zapien J A, Lee C S, Lifshitz Y, Lee S T 2004 Adv. Funct. Mater. 14 589
[12] Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[13] Shan C X, Liu Z, Hark S K 2008 Appl. Phys. Lett. 92 073103
[14] Zang C Y, Zang C H, Wang B, Jia Z X, Yue S R, Li Y S, Yang H Q, Zhang Y S 2011 Physica B 406 3479
[15] Li J C, Li Y F, Yao B, Xu Y, Long S W, Liu L, Zhang Z Z, Zhang L G, Zhao H F, Shen D Z 2013 J. Chem. Phys. 138 034704
[16] Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G, Grundmann M 2007 Nanotechnology 18 455707
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[1] Chen X M, Gao X Y, Zhang S, Liu H T 2013 Acta Phys. Sin. 62 049102 (in Chinese) [陈先梅, 郜小勇, 张飒, 刘红涛 2013 物理学报 62 049102]
[2] Feng Q J, Jiang J Y, Tang K, L J Y, Liu Y, Li R, Guo H Y, Xu K, Song Z, Li M K 2013 Acta Phys. Sin. 62 057802 (in Chinese) [冯秋菊, 蒋俊岩, 唐凯, 吕佳音, 刘洋, 李荣, 郭慧颖, 徐坤, 宋哲, 李梦轲 2013 物理学报 62 057802]
[3] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901 (in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]
[4] Xiang B, Wang P W, Zhang X Z, Dayeh S A, Aplin D P R, Soci C, Yu D P, Wang D L 2007 Nano Lett. 7 323
[5] Yuan G D, Zhang W J, Jie J S, Fan X, Zapien J A, Leung Y H, Luo L B, Wang P F, Lee C S, Lee S T 2008 Nano Lett. 8 2591
[6] Liu W, Xiu F X, Sun K, Xie Y H, Wang K L, Wang Y, Zou J, Yang Z, Liu J L 2010 J. Am. Chem. Soc. 132 2498
[7] Umar A, Hahn Y B 2006 Appl. Phys. Lett. 88 173120
[8] Li W J, Shi E W, Zhong W Z, Yin Z W 1999 J. Cryst. Growth 203 186
[9] Fan D H, Zhang R, Wang X H 2010 Physica E 42 2081
[10] Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L 2005 Appl. Phys. Lett. 87 252102
[11] Geng C, Jiang Y, Yao Y, Meng X, Zapien J A, Lee C S, Lifshitz Y, Lee S T 2004 Adv. Funct. Mater. 14 589
[12] Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[13] Shan C X, Liu Z, Hark S K 2008 Appl. Phys. Lett. 92 073103
[14] Zang C Y, Zang C H, Wang B, Jia Z X, Yue S R, Li Y S, Yang H Q, Zhang Y S 2011 Physica B 406 3479
[15] Li J C, Li Y F, Yao B, Xu Y, Long S W, Liu L, Zhang Z Z, Zhang L G, Zhao H F, Shen D Z 2013 J. Chem. Phys. 138 034704
[16] Cao B Q, Lorenz M, Rahm A, von Wenckstern H, Czekalla C, Lenzner J, Benndorf G, Grundmann M 2007 Nanotechnology 18 455707
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