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中国物理学会期刊

化学气相沉积法制备大面积二维材料薄膜: 方法与机制

CSTR: 32037.14.aps.70.20201398

Chemical vapor deposition growth of large-areas two dimensional materials: Approaches and mechanisms

CSTR: 32037.14.aps.70.20201398
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  • 近年来, 二维层状材料由于其丰富的材料体系和独特的物理化学性质而受到人们的广泛关注. 后摩尔时代要求器件高度集成化, 大面积、高质量的二维材料可以保证器件中结构和电子性能的连续性. 要实现二维材料工业级别的规模化生产, 样品的可控制备是其前提. 化学气相沉积是满足上述要求的一种强有力的方法, 已广泛应用于二维材料及其复合结构的生长制备. 但是要实现多种二维材料大尺寸以至晶圆级的批量制备仍然是很困难的, 因此, 需要进一步建立对各种二维材料生长控制的系统认识. 本文基于材料生长机理分析了化学气相沉积反应中的物质运输、成核、产物生长过程对二维材料尺寸的影响, 以及如何通过调控这些过程实现二维材料大面积薄膜的可控制备. 通过对目前研究成果的总结分析, 讨论了如何进一步实现二维材料的高质量大面积制备.

     

    Two-dimensional (2D) layered materials have attracted increasing attention in recent years because of their abundant material categories and superior physical/chemical properties. In order to satisfy the requirements for highly integrated devices in the post-Moore era, substantial efforts have been devoted to producing atomically thin 2D materials with large lateral dimensions and high crystalline quality. The controllable synthesis is the precondition of the implementation of large mass producing 2D material in industry. Chemical vapor deposition (CVD) is a powerful method widely used in the synthesis of 2D materials and their hybrid structures. However, it is still challengeable to flexibly and easily grow any 2D materials into large area. Therefore, a systematic understanding of the requirements for controllable growth of different 2D materials are desired. In this review article, we provide a comprehensive discussion on the influencing factors, material transport, nucleation and growth rate in the CVD growth process. Finally, the strategies to further improve the size and quality of 2D materials are prospected.

     

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