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二维(Two-dimensional,2D)异质结因其能整合不同组分的材料并产生新颖物理现象，已成为构筑下一代光电子与微电子器件的理想平台．化学气相沉积(Chemical vapor deposition,CVD)技术是实现其大面积、高质量、可控制备的关键途径．本综述系统梳理了CVD法制备2D异质结的最新进展，重点阐述了通过前驱体设计、温度场调控、气体诱导及衬底工程四大核心策略，在精准调控异质结结构(垂直/横向)、界面、组分及结晶质量方面的机理与成果．目前该技术仍面临较大挑战，未来通过融合原位表征、多尺度模拟与人工智能优化，有望实现从“经验试错”到“精准设计”的跨越，推动2D异质结在量子计算、柔性电子等前沿领域的实际应用．This review systematically summarizes recent advances in the chemical vapor deposition (CVD)-based synthesis of two-dimensional (2D) heterostructures, which have emerged as an ideal platform for next-generation optoelectronic and microelectronic devices due to their ability to integrate diverse material components and induce novel physical phenomena. The review begins by introducing the classification of 2D heterostructures, such as vertical (VHS), lateral (LHS), and hybrid heterostructures (HHS). We further highlight the unique advantages of CVD as a key route for achieving large-area, high-quality, and controllable preparation, effectively avoiding interface contamination and issues such as interfacial states and Fermi-level pinning caused by lattice mismatch in traditional semiconductor heterostructures. We focus on four core strategies for precise growth control: (1) Precursor design: By constructing core-shell structures, introducing auxiliary agents, or modulating precursor proportions and physical forms, the sequential supply and reaction pathways of different components can be precisely regulated to guide oriented growth and suppress alloy formation. (2) Temperature field modulation: Utilizing differences in the growth windows of various materials and precisely controlling heating rates, temperature uniformity, and gradients enable selective growth modes (lateral or vertical), effective suppression of alloying, and protection of pre-deposited layers. (3) Vapor composition control: By switching carrier gas atmospheres, the nucleation and growth of specific materials can be selectively initiated or halted, offering a one-pot strategy for fabricating multi-junction lateral heterostructures and superlattices with atomically sharp interfaces. (4) Substrate engineering: Leveraging surface energy, lattice matching, catalytic activity, and pretreatment processes of different substrates to actively guide nucleation sites, growth modes, and crystalline quality.
Although significant progress has been made in the CVD synthesis of various 2D heterostructures, such as MX2/MY2, graphene/h-BN, and mixed-dimensional heterojunctions, considerable challenges remain in achieving large-area uniformity, reproducible processes, precise control of complex heterostructures (e.g., multi-interface, moiré superlattices, and patterned growth), and compatibility with current semiconductor technology. Future development should focus on integrating in situ characterization, multi-scale simulations, and artificial intelligence-assisted optimization to facilitate a transition from empirical trial-and-error to precision design. The introduction of novel growth techniques, such as laser-induced or microwave-assisted CVD, roll-to-roll processes, and substrate interface engineering, is expected to accelerate the practical application of 2D heterostructures in cutting-edge fields such as quantum computing and flexible electronics.-
Keywords:
- Chemical vapor deposition /
- Lateral heterostructures /
- Vertical heterostructures /
- Precise preparation
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