化学气相沉积法精准制备二维异质结: 现状与展望

郝玉龙; 彭奥林; 张世伟; 陆雪媚; 周洁; 郝国林

doi:10.7498/aps.74.20251305

摘要

二维(two-dimensional, 2D)异质结因其能整合不同组分的材料并产生新颖物理现象, 已成为构筑下一代光电子与微电子器件的理想平台. 化学气相沉积(chemical vapor deposition, CVD)技术是实现其大面积、高质量、可控制备的关键途径. 本综述系统梳理了CVD法制备2D异质结的最新进展, 重点阐述了通过前驱体设计、温度场调控、气体诱导及衬底工程四大核心策略, 在精准调控异质结结构(垂直/横向)、界面、组分及结晶质量方面的机理与成果. 目前该技术仍面临较大挑战, 未来通过融合原位表征、多尺度模拟与人工智能优化, 有望实现从“经验试错”到“精准设计”的跨越, 推动2D异质结在量子计算、柔性电子等前沿领域的实际应用.

关键词:

Abstract

This review systematically summarizes recent advances in the chemical vapor deposition (CVD)-based synthesis of two-dimensional (2D) heterostructures, which have emerged as an ideal platform for next-generation optoelectronic and microelectronic devices due to their ability to integrate diverse material components and induce novel physical phenomena. The review begins by introducing the classification of 2D heterostructures, such as vertical (VHS), lateral (LHS), and hybrid heterostructures (HHS). We further highlight the unique advantages of CVD as a key route for achieving large-area, high-quality, and controllable preparation, thereby effectively avoiding interface contamination and issues such as interfacial states and Fermi-level pinning caused by lattice mismatch in traditional semiconductor heterostructures.We focus on four core strategies for precise growth control: precursor design, temperature field modulation, vapor composition control, and substrate engineering. In the precursor design, by constructing core-shell structures, introducing auxiliary agents, or modulating precursor proportions and physical forms, the sequential supply and reaction pathways of different components can be precisely regulated to guide oriented growth and suppress alloy formation. In temperature field modulation, utilizing differences in the growth windows between various materials and precisely controlling heating rates, temperature uniformity, and gradients can achieve selective growth modes (lateral or vertical), effective suppression of alloying, and protection of pre-deposited layers. In vapor composition control, by switching carrier gas atmospheres, the nucleation and growth of specific materials can be selectively initiated or halted, providing a one-pot strategy for fabricating multi-junction lateral heterostructures and superlattices with atomically sharp interfaces. In substrate engineering, the surface energy, lattice matching, catalytic activity, and pretreatment processes of different substrates are used to actively guide nucleation sites, growth modes, and crystalline quality.Although significant progress has been made in the CVD synthesis of various 2D heterostructures, such as MX₂/MY₂, graphene/h-BN, and mixed-dimensional heterojunctions, considerable challenges remain in achieving large-area uniformity, reproducible processes, precise control of complex heterostructures (e.g., multi-interface, moiré superlattices, and patterned growth), and compatibility with current semiconductor technology. Future development should focus on integrating in situ characterization, multi-scale simulations, and artificial intelligence-assisted optimization to facilitate a transition from empirical trial-and-error to precision design. The introduction of novel growth techniques, such as laser-induced or microwave-assisted CVD, roll-to-roll processes, and substrate interface engineering, is expected to accelerate the practical application of 2D heterostructures in cutting-edge fields such as quantum computing and flexible electronics.

Keywords:

作者及机构信息

湘潭大学物理与光电工程学院, 湘潭　411105

通信作者: 郝国林, guolinhao@xtu.edu.cn

基金项目: 松山湖材料实验室开放课题(批准号: 2023SLABFK08)、国家自然科学基金面上项目(批准号: 11974301)、湖南省自然科学基金青年学生项目(批准号: 2025JJ60881)、湖南省研究生科研创新项目(批准号: CX20250951)和湘潭大学研究生科研创新项目(批准号: XDCX2024Y198)资助的课题.

Authors and contacts

School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China

Corresponding author: HAO Guolin, guolinhao@xtu.edu.cn

Funds: Project supported by the Open Program of Songshan Lake Materials Laboratory (Grant No. 2023SLABFK08), the General Program of the National Natural Science Foundation of China (Grant No. 11974301), the Natural Science Foundation Program for Young Students of Hunan Province, China (Grant No. 2025JJ60881), the Postgraduate Research Innovation Program of Hunan Province, China (Grant No. CX20250951), and the Postgraduate Scientific Research Innovation Program of Xiangtan University, China (Grant No. XDCX2024Y198).

文章全文

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施引文献

图 1 (a) WO_3–x/MoO_3–x核壳纳米线及MoS₂/WS₂ VHS合成的原子结构示意图; (b) WO_3–x/MoO_3–x核壳纳米线的TEM图像, 其核直径约为100 nm, 壳厚度约为20 nm; (c) WO_3–x和MoO_3–x界面的HR-TEM图像; (d) CVD生长的MoS₂/WS₂ VHS OM图像; (e)单独的MoS₂/WS₂ VHS OM图像; (f) 图(e)中所示VHS的拉曼面扫描图像; (g), (j)单层MoS₂, WS₂, MoS₂/WS₂ VHS的拉曼和PL光谱; (h), (i)分别具有1.84 eV (MoS₂的A-激子峰)和1.97 eV (WS₂的A-激子峰)的MoS₂/WS₂ VHS PL面扫描图像^[152]

Fig. 1. (a) Atomic structure schematic of WO_3–x/MoO_3–x core-shell nanowires and the synthesis of MoS₂/WS₂ VHS; (b) TEM image of WO_3–x/MoO_3–x core-shell nanowires, with a core diameter of ~100 nm and shell thickness of ~20 nm; (c) HR-TEM image of the interface between WO_3–x and MoO_3–x; (d) OM image of the CVD-grown MoS₂/WS₂ VHS; (e) OM image of an individual MoS₂/WS₂ VHS; (f) Raman mapping image of the VHS shown in (e); (g), (j) Raman and PL spectra of monolayer MoS₂, WS₂, and MoS₂/WS₂ VHS; (h), (i) PL mapping images of the MoS₂/WS₂ VHS at 1.84 eV (A-exciton peak of MoS₂) and 1.97 eV (A-exciton peak of WS₂), respectively^[152].

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图 2 (a) 磁辅助CVD石英管示意图; (b) 在第1阶段中生长底层MoS₂, 再快速冷却和引入Te形成MoTe₂/MoS₂ VHS; (c) MoTe₂/MoS₂ VHS的示意性侧视图; (d) MoTe₂/MoS₂ VHS的OM图像; (e) MoTe₂/MoS₂ VHS的背散射SEM图像; (f) 图(d)中MoTe₂/MoS₂ VHS的原子力显微镜AFM表征^[134]

Fig. 2. (a) Schematic of the magnetic-field-assisted CVD quartz tube; (b) growth of the bottom-layer MoS₂ in the first stage, followed by rapid cooling and introduction of Te to form a MoTe₂/MoS₂ VHS; (c) schematic side view of the MoTe₂/MoS₂ VHS; (d) OM image of the MoTe₂/MoS₂ VHS; (e) backscattered SEM image of the MoTe₂/MoS₂ VHS; (f) AFM characterization of the MoTe₂/MoS₂ VHS in panel (d)^[134].

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图 3 (a1)—(e2) 随着W/Se比例增加, MoS₂/WSe₂异质结形貌从横向主导、混合模式到垂直主导连续演变的原子结构示意图; (f) 横向生长长度和纵向生长长度随W/Se组成比的变化趋势; (g) 异质结构类型与W前体 (WO₃)和Se前体的剂量的关系; (h) 在不同W/Se比下的横向、混合和垂直异质结构的统计; (i) 吸附各种活性团簇W₁Se_X的横向/垂直MoS₂/WSe₂异质结构可控生长过程示意图; (j) 不同垂直异质结构的空间分辨的拉曼面扫描图像^[153]; (k) 活性团簇在WSe₂表面不同位置的结合能; (l) WSe₂活性团簇在WSe₂表面的扩散行为; (m) WSe₂活性团簇在WSe₂表面的扩散行为; (n) WSe₃活性团簇在WSe₂表面的扩散行为; (o) 双层-双层和双层-单层 WS₂/WSe₂生长过程示意图^[149]

Fig. 3. (a1)–(e2) Schematic diagrams illustrating the continuous evolution of the MoS₂/WSe₂ heterostructure morphology, which transitions from being LHS-dominated to VHS-dominated with an increasing W/Se ratio; (f) the evolution trends of lateral and vertical growth length with composition ratio of W/Se; (g) the relation of heterostructure type with the dosage of W precursor (WO₃) and Se precursor; (h) the statistics of LHS, HHS, and VHS at different W/Se ratios; (i) schematic view of controllable growth process of MoS₂/WSe₂ LHS/VHS with the adsorption of various active clusters W₁Se_X; (j) spatially resolved Raman mapping image of diverse VHS^[153]; (k) binding energies of the active clusters on the different positions of the WSe₂ surface; (l) diffusion behavior of the WSe₂ active cluster on the WSe₂ surface; (m) diffusion behavior of the WSe active cluster on the WSe₂ surface; (n) diffusion behavior of the WSe₃ active cluster on the WSe₂ surface; (o) schematic view of the growth process of bilayer-bilayer and bilayer-monolayer WS₂/WSe₂^[149].

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图 4 (a) 通过PECVD在300 ℃下的单步穿透硫化合成MoS₂/WS₂ VHS的示意图; (b) 随时间相关的等离子体硫化机制的横截面HR-TEM图像; (c) 硫化时间相关条件的拉曼光谱; (d) WS₂/MoS₂ VHS合成过程的示意图; (e)—(g) 不同金属厚度的穿透H₂S等离子体过程, (e) Mo 1 nm/W 2 nm, (f) Mo 2 nm/W 1 nm, (g) Mo 2 nm/W 2 nm^[155]; (h) 通过旋涂将Mo溶液前体分散在蓝宝石衬底上的示意图; (i) 通过氢触发一锅法CVD方法合成的MoS₂/WS₂ LHS的示意图; (j) MoS₂/WS₂ LHS外延生长过程的原子结构模型^[156]

Fig. 4. (a) Schematic illustration of one-step through-plane sulfurization via PECVD at 300 ℃ for synthesizing MoS₂/WS₂ VHS; (b) cross-sectional HR-TEM images revealing the time-dependent plasma-assisted sulfurization mechanism; (c) Raman spectra under varying sulfurization durations; (d) schematic of the synthesis process for WS₂/MoS₂ VHS; (e)–(g) through-plane H₂S plasma process with different metal thicknesses: (e) Mo 1 nm/W 2 nm, (f) Mo 2 nm/W 1 nm, (g) Mo 2 nm/W 2 nm^[155]; (h) schematic showing the dispersion of Mo solution precursor on a sapphire substrate via spin-coating; (i) illustration of one-pot CVD synthesis of MoS₂/WS₂ LHS triggered by hydrogen; (j) atomic structure model of the epitaxial growth process of a MoS₂/WS₂ LHS^[156].

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图 5 (a) 辅助剂复合前驱体CVD工艺示意图; (b)—(f) NH₄Cl充足供应时生长的MoS₂/WS₂ VHS的原子结构、OM、拉曼面扫描和AFM图像; (g)—(k) NH₄Cl供应不足时生长的MoS₂/WS₂ HHS的原子结构图、OM、拉曼面扫描和AFM图像; (i)—(p) 无NH₄Cl供应时生长的MoS₂/WS₂ LHS的原子结构图、OM、拉曼面扫描和AFM图像^[159]; (q) 由液态Ga和Ga₂Se₃粉末的前驱体复合的反应系统以及相应的GaSe/MoS₂异质结原子结构; (r)—(u), (v)—(y) 单层MoS₂, GaSe/MoS₂横向、混合和垂直异质结构的OM和AFM图像^[160]

Fig. 5. (a) Schematic diagram of the CVD process using an auxiliary-agent-modified precursor; (b)–(f) atomic structure diagram, OM, Raman mapping, and AFM images of MoS₂/WS₂ VHS grown with sufficient NH₄Cl supply; (g)–(k) atomic structure, OM, Raman mapping, and AFM images of MoS₂/WS₂ HHS grown under insufficient NH₄Cl supply; (i)–(p) atomic structure diagram, OM, Raman mapping, and AFM images of MoS₂/WS₂ LHS obtained in the absence of NH₄Cl^[159]; (q) reaction system based on a precursor composite of liquid Ga and Ga₂Se₃ powder, along with the corresponding atomic structure of a GaSe/MoS₂ heterostructure; (r)–(u), (v)–(y) OM and AFM images of monolayer MoS₂, GaSe/MoS₂ LHS, HHS and VHS^[160].

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图 6 (a) WS₂/MoS₂ LHS和VHS的生长系统; (b) WS₂/MoS₂ LHS的生长示意图; (c) 大面积单层WS₂的OM图像; (d) WS₂/MoS₂ LHS的生长机理图; (e) 单个WS₂/MoS₂ LHS的OM图像; (f) WS₂/MoS₂ VHS的生长示意图; (g) 大面积单层MoS₂的OM图像; (h) WS₂/MoS₂ VHS的生长机理图; (i) 单个WS₂/MoS₂ VHS的OM图像^[163]; (j) MoS₂/WSe₂/EG或WSe₂/MoSe₂/EG VHS的形成^[164]

Fig. 6. (a) Growth system for WS₂/MoS₂ LHS and VHS; (b) schematic illustration of the growth of a WS₂/MoS₂ LHS; (c) OM image of a large-area monolayer WS₂; (d) growth mechanism diagram of the WS₂/MoS₂ LHS; (e) OM image of an individual WS₂/MoS₂ LHS; (f) schematic illustration of the growth of a WS₂/MoS₂ VHS; (g) OM image of a large-area monolayer MoS₂; (h) growth mechanism diagram of the WS₂/MoS₂ VHS; (i) OM image of an individual WS₂/MoS₂ VHS^[163]; (j) formation of MoS₂/WSe₂/EG or WSe₂/MoSe₂/EG VHS^[164].

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图 7 (a1) 合成WSe₂/WS₂ LHS的CVD系统示意图; (b1) 第一和第二加热温区温度分布; (c1) WSe_2/WS₂ LHS的OM图像; (d1) WSe₂/WS₂ LHS的尺寸和厚度分布; (e1) 拉曼光谱, 其取自WSe₂/WS₂异质结构的中心和边缘区域; (f1) 中心和边缘处异质结构的PL光谱; (g1), (h1) 异质结中WS₂ (g1)和WSe₂ $ {E}_{1\mathrm{g}}^{2} $ (h1)振动模式的拉曼面扫描图像; (i1) 异质结构的AFM形貌图像; (j1) 异质结构的相位图像^[165]; (a2) 两种异质结构的合成过程示意图; (b2)—(e2) 在850 ℃下合成WS₂/MoS₂ VHS的示意图、OM和SEM图像, 显示了异质结的特征和高产率; (f2)—(i2) 在650 ℃下生长的WS₂/MoS₂ LHS的示意图、OM和SEM图像; (h2) WS₂和MoS₂之间界面的OM图像, 具有增强的颜色对比度, 显示界面处对比度的突变^[166]

Fig. 7. (a1) Schematic of the CVD system for synthesizing WSe₂/WS₂ LHS; (b1) temperature profiles of the first and second heating zones; (c1) OM image of the WSe₂/WS₂ LHS; (d1) size and thickness distribution of the WSe₂/WS₂ LHS; (e1) Raman spectra acquired from the center and edge regions of the WSe₂/WS₂ heterostructure; (f1) PL spectra of the heterostructure at the center and edge regions; (g1), (h1) Raman mapping images of the WS₂ (g1) and WSe₂ $ {E}_{1\mathrm{g}}^{2} $ (h1) vibration modes in the heterostructure; (i1) AFM topographic image of the heterostructure; (j1) phase image of the heterostructure^[165]; (a2) schematic illustration of the synthesis process for the two types of heterostructures; (b2)–(e2) schematic diagram, OM, and SEM images of WS₂/MoS₂ VHS synthesized at 850 ℃, demonstrating the characteristics and high yield of the heterostructures; (f2)–(i2) schematic diagram, OM, and SEM images of WS₂/MoS₂ LHS grown at 650 ℃; (h2) OM image of the interface between WS₂ and MoS₂ with enhanced color contrast, showing an abrupt change in contrast at the boundary^[166].

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图 8 (a)—(d) 异质结和合金的晶体结构示意图; (e)—(h) MoS₂-WS₂ VH、RH、HH和合金的OM图像, 分别对应它们的最终生长温度; (i) MoS₂-WS₂系统TTA图; (j) MoSe₂-WSe₂系统TTA图^[167]

Fig. 8. (a)–(d) Schematic diagrams of the crystal structures of heterostructures and alloys; (e)–(h) OM images of MoS₂/WS₂ VHS, LHS, HHS, and alloys, corresponding to their respective final growth temperatures; (i) TTA diagram of the MoS₂/WS₂ system; (j) TTA diagram of the MoSe₂/WSe₂ system^[167].

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图 9 (a) 改进逆流CVD系统的示意图; (b1) WS₂/WSe₂横向异质结的OM图像; (b2) WS₂/WSe₂横向异质结的拉曼面扫描图像; (b3), (b4) WS₂/WSe₂横向异质结PL面扫描图像; (c1), (c2) WSe₂/MoS₂横向异质结构的OM图像和PL面扫描图像; (d1), (d2) WS₂/MoS₂横向异质结的OM图像和PL面扫描图像; (e1), (e2) WSe₂/MoSe₂横向异质结的OM图像和PL面扫描图像; (f1), (f2) WS₂/MoSe₂横向异质结的OM图像和PL面扫描图像; (g1)—(j5) 二维超晶格和多异质结的拉曼和PL面扫描图像^[168]

Fig. 9. (a) Schematic diagram of the modified counter-flow CVD system; (b1) OM image of the WS₂/WSe₂ LHS; (b2) Raman mapping image of the WS₂/WSe₂ LHS; (b3), (b4) PL mapping images of the WS₂/WSe₂ LHS; (c1), (c2) OM image and PL mapping image of the WSe₂/MoS₂ LHS; (d1), (d2) OM image and PL mapping image of the WS₂/MoS₂ LHS; (e1), (e2) OM image and PL mapping image of the WSe₂/MoSe₂ LHS; (f1), (f2) OM image and PL mapping image of the WS₂/MoSe₂ LHS; (g1)–(j5) Raman and PL mapping image of two-dimensional superlattices and multi-heterostructures^[168].

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图 10 (a) 通过4个两步气相沉积循环的晶圆级四层异质结生长的示意图, 每个循环组合金属膜涂层和TMDC膜; (b) TMDC物质的排列遵循高温到低温策略, 从WS₂开始, 因为这需要最高的温度. 石墨烯和hBN被显示用于比较, 这里制造的TMDC薄膜包含2D超导体、调谐超导体和邻近诱导超导体, 颜色条显示了过程中每个部分所需的温度方向^[169]

Fig. 10. (a) Schematic showing the growth of a wafer-scale four-block vdWSH through four cycles of two-step vapour deposition, each combining a metal film coating and a TMDC film; (b) the arrangement of TMDC species follows the high-to-low temperature strategy, starting with WS₂, as that requires the highest temperature, graphene and hBN are shown for comparison, the TMDC films fabricated here contain 2D superconductors, tuned superconductors and proximity-induced superconductors, as indicated, the colour bar shows the direction of temperature required for each part of the process^[169].

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图 11 (a) 改进的化学气相沉积系统的示意图, 该系统允许交替切换载气, 载气通过鼓泡器而引入水蒸气, 载气通过放置在石英管入口处的三通阀来选择; (b) 原子球模型, 以横截面和平面视图显示异质结上的材料分布; (c) 三结异质结的OM图像; (d), (e) 五结异质结构的OM图像; (f) 七结异质结构的OM图像; (g), (h) 拉曼(g)和PL (h)光谱在(c)位置的1, 2, 3和4上; (i), (j) WSe₂ (1.6 eV, 顶部)和MoSe₂ (1.52 eV, 底部)的PL面扫描图以及(d)中异质结构的复合PL图(j); (k), (l) 三结(k)和五结(l)异质结构的归一化PL强度的等高线彩色图^[170]

Fig. 11. (a) Schematic diagram of the modified chemical vapor deposition system, which allows alternate switching of carrier gas. The carrier gas introduces water vapor via a bubbler and is selected using a three-way valve positioned at the inlet of the quartz tube; (b) atomic ball-and-stick model showing the material distribution in the heterostructure, in both cross-sectional and planar views; (c) OM image of a triple-junction heterostructure; (d), (e) OM images of a five-junction heterostructure; (f) OM image of a seven-junction heterostructure; (g), (h) Raman (g) and PL (h) spectra taken at positions 1, 2, 3, and 4 marked in (c); (i), (j) PL maps of WSe₂ (1.6 eV, top)and MoSe₂ (1.52 eV, bottom), and the composite PL map (j) of the heterostructure in (d); (k), (l) Contour-colored maps of normalized PL intensity for the triple-junction (k) and five-junction (l) heterostructures^[170].

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图 12 (a) 用于合成MoS₂/WS₂LHS的CVD装置的示意图; (b) MoS₂结构、(c) WS₂结构和(d)用于多结LHS生长的机制示意图; (e) MoS₂/WS₂ LHS的OM图像, 以及(f)相应的放大图像和(g)多结异质结, 显示存在MoS₂和WS₂的明确畴; (h) K_n+/K_n–作为温度的函数, 随着温度的升高, 生长从横向生长变为横向和垂直生长的组合^[171]

Fig. 12. (a) Schematic diagram of the CVD setup used for synthesizing MoS₂/WS₂ LHS; (b) MoS₂ structure, (c) WS₂ structure, and (d) mechanism illustration for the growth of multi-junction LHS; (e) OM image of a MoS₂/WS₂ LHS, along with (f) corresponding magnified view and (g) multi-junction heterostructure, showing distinct domains of MoS₂ and WS₂; (h) K_n₊/K_n– as a function of temperature, indicating a transition from purely lateral growth to a combination of LHS and VHS growth with increasing temperature^[171].

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图 13 (a) 通过一锅CVD法合成WS₂/ReS₂ LHS的示意图; (b) 异质结的氢触发一锅生长过程的原子模型; (c) 在Ar条件下生长的ReS₂和(d) 在Ar + H₂条件下生长的WS₂的SEM图像; (e), (f) 在第1阶段的Ar条件下和在第2阶段的Ar+H₂条件下生长的WS₂/ReS₂ LHS的SEM图像和对应的AFM图像; (g) WS₂/ReS₂横向异质结的OM图像; (h) WS₂/ReS₂异质结的拉曼光谱; (i) 在异质结的这3个区域获得的相应PL光谱; (j)—(m) 在418, 355, 161和213 cm^–1处获得的拉曼面扫描图像; (n) 由213和418 cm^–1处的两个不同的拉曼峰组成的复合拉曼面扫描图像^[127]

Fig. 13. (a) Schematic illustration of the one-pot CVD synthesis of WS₂/ReS₂ LHS; (b) atomic model of the hydrogen-triggered one-pot growth process for the heterostructure; (c) SEM image of ReS₂ grown under Ar atmosphere; (d) SEM image of WS₂ grown under Ar+H₂ atmosphere; (e), (f) SEM and corresponding AFM images of WS₂/ReS₂ LHS grown first under Ar atmosphere and then under Ar+H₂ atmosphere; (g) OM image of the WS₂/ReS₂ LHS; (h) Raman spectrum of the WS₂/ReS₂ heterostructure; (i) corresponding PL spectra obtained from the three marked regions of the heterostructure; (j)–(m) Raman mapping images acquired at 418, 355, 161, and 213 cm^–1; (n) composite Raman mapping image formed by integrating two distinct Raman peaks at 213 and 418 cm^–1[127].

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图 14 (a) MoS₂/石墨烯面LHS的合成示意图; (b) 在蓝宝石衬底上生长的LHS的CLSM和(c) SEM图像; (d) 当使用SiO₂代替蓝宝石作为衬底时获得的MoS₂/石墨烯VHS结构的SEM图像^[177]

Fig. 14. (a) Schematic of the synthesis of a MoS₂/graphene LHS; (b) CLSM and (c) SEM images of the LHS grown on a sapphire substrate; (d) SEM image of a MoS₂/graphene VHS obtained when SiO₂ was used as a substrate instead of sapphire^[177].

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图 15 (a) 在Au(111)表面生长ReS₂/WS₂ 异质结的示意图; (b)—(d) 模拟的Re原子(b)和W原子(c)在Au(111)表面以及Re原子在WS₂(001)面上的侧视图吸附情况; (e)—(g) 以W箔(e)、Re箔(f)和W-Re合金箔(g)作为支撑基底在Au上生长的示意图^[178]

Fig. 15. (a) Schematic illustration of the growth process of ReS₂/WS₂ heterostructures on the Au(111) surface; (b)–(d) side views of the simulated adsorption configurations of Re atoms (b) and W atoms (c) on the Au(111) surface, and of Re atoms on the WS₂(001) surface (d); (e)–(g) schematics of growth on Au using W foil (e), Re foil (f), and W-Re alloy foil (g) as support substrates^[178].

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图 16 (a) SiO₂/Si衬底上的Sb₂Te₃/Bi₂Te₃叠层的顺序两步堆叠生长的示意图; (b) SiO₂/Si衬底上底层Bi₂Te₃的生长示意图; (c) SiO₂/Si衬底上的Sb₂Te₃/Bi₂Te₃ VHS的OM图像和AFM图像; (d) h-BN衬底上的Sb₂Te₃/Bi₂Te₃ VHS的生长示意图; (e) h-BN衬底上底层Bi₂Te₃的生长示意图; (f) h-BN衬底上的Sb₂Te₃/Bi₂Te₃ VHS的OM图像和AFM图像^[143]

Fig. 16. (a) Schematic diagram of the sequential two-step stacking growth of Sb₂Te₃/Bi₂Te₃ on SiO₂/Si substrate; (b) schematic illustration of the bottom-layer Bi₂Te₃ growth on SiO₂/Si substrate; (c) OM and AFM images of the Sb₂Te₃/Bi₂Te₃ VHS on SiO₂/Si substrate; (d) schematic diagram of the growth of Sb₂Te₃/Bi₂Te₃ VHS on h-BN substrate; (e) schematic illustration of the bottom-layer Bi₂Te₃ growth on h-BN substrate; (f) OM and AFM images of the Sb₂Te₃/Bi₂Te₃ VHS on h-BN substrate^[143].

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图 17 (a) CVD装置和平行缝合2D-TMD异质结构的合成过程的示意图; (b), (d), (f)石墨烯/MoS₂ (b), WS₂/MoS₂ (d)和hBN/MoS₂ (f)的平行缝合异质结构的示意图; (c), (e), (g)对应于图(b), (d), (f)的光学图像和PL面扫描图像^[180]

Fig. 17. (a) Schematic of the CVD setup and the synthesis process of laterally stitched 2D-TMD heterostructures; (b), (d), (f) illustrations of laterally stitched heterostructures of graphene/MoS₂ (b), WS₂/MoS₂ (d), and hBN/MoS₂ (f); (c), (e), (g) optical images and corresponding PL mapping images of the structures shown in panels (b), (d), and (f), respectively^[180].

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