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二维铁电半导体α-In2Se3在新型电子器件中具有重要应用前景.然而采用化学气相沉积法(CVD),该材料通常需要高于650℃的高温.本研究提出一种低温合成策略,通过引入KCl/LiCl/NH4Cl三元催化剂体系,在400-460℃(优化条件440℃)制备α-In2Se3薄膜,该工艺较传统方法降低温度200℃以上.扫描电子显微镜(SEM)表征显示材料形貌可通过温度与气体流速协同调控,从六边形薄片转变为连续均匀薄膜;能量色散谱仪(EDS)分析表明元素比例接近理想化学计量比(In∶Se=36.38∶63.62);拉曼光谱(特征峰103/180/195 cm-1)与X射线光电子能谱(XPS)(In∶Se=1.92∶3.00)共同证实材料为纯α相、化学计量比接近理想值.基于此材料构建的阻变器件表现出模拟阻变的特性,模拟了生物突触的长时程增强/抑制行为.在人工神经网络仿真中,对MNIST数据集的图像识别准确率均在90%以上.该低温合成工艺突破高温限制,为α-In2Se3在硅基神经形态计算芯片中的规模化集成提供可行路径.Two-dimensional ferroelectric α-In2Se3 possess many fascinating physical properties. However, chemical-vapor-deposited ferroelectric α-In2Se3 typically requires high temperatures (> 650 °C). In this work, a KCl/LiCl/NH4Cl ternary catalyst was introduced to synthesize α-In2Se3 at 400-460 °C, giving rise to a 200 °C reduction in growth temperature compared with traditional chemical vapor deposition (CVD) method for ferroelectric α-In2Se3. The surface morphology of the as-prepared materials was controlled by temperature and gas flow rate. As the growth temperature increased from 400 to 460 °C, the synthesized α-In2Se3 was changed from discrete hexagonal flakes to a continuous and uniform thin film, which was confirmed by the scanning electron microscope. Raman spectroscopy showed the characteristic peaks of In2Se3 located at 103, 180, and 195 cm-1, respectively, indicating that the CVD-grown In2Se3 was α-phase. Furthermore, energy dispersive spectrometer and X-ray photoelectron spectroscopy indicated that the elemental composition was close to the ideal stoichiometric ratio, confirming the successful synthesis of the α-In2Se3. Then, the as-prepared α-In2Se3 was transferred onto Si/SiO2 substrate for device fabrication. Atomic force microscope showed that the film was uniform with the thickness of approximately 63 nm. The fabricated two-terminal memristors exhibited analog resistive switching behaviors. And such memristors were used to achieve synaptic functions of long-term potentiation/long-term depression. For artificial neural network simulations based on the synaptic memristors, the recognition accuracy for hand-written digit image exceeded 90%. This work provides a feasible way to low-temperature growth 2D ferroelectric α-In2Se3 for applications in synaptic devices and neuromorphic computing.
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Keywords:
- α-In2Se3 /
- Chemical Vapor Deposition /
- Memristor /
- Synaptic Device
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