高速高饱和单行载流子光探测器的设计与分析

臧鸽; 黄永清; 骆扬; 段晓峰; 任晓敏

doi:10.7498/aps.63.208502

摘要

设计了一种InP基的背入射台面结构的单行载流子光探测器. 通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层，使得光探测器同时具备了高速和高饱和电流特性．理论分析表明，在光敏面为14 μm2、反向偏压为2 V条件下，该器件的3 dB带宽可达58 GHz，直流饱和电流高达158 mA. 在大功率光注入条件下，详细分析了光探测器带宽降低和电流饱和现象，得出能带偏移和电场坍塌是其根本原因的结论.

关键词:

Abstract

In this paper, an InP-based mesa-structure uni-traveling-carrier photodetector is designed. By adopting Gaussian doping scheme in the absorption layer and incorporating an appropriate cliff layer, high speed and high saturation current characteristics are both achieved simultaneously. For the device with a 14 μm2 active area, the simulated results indicate that the bandwidth reaches 58 GHz and DC saturation current increases up to 158 mA at a reverse bias of 2 V. Under high optical injection, the bandwidth degradation and current saturation are studied, which are caused by energy band shift and electric field collapse.

Keywords:

作者及机构信息

1.
北京邮电大学, 信息光子学与光通信国家重点实验室, 北京 100876

基金项目: 国家重点基础研究发展计划（批准号：2010CB327600）、国家自然科学基金（批准号：61020106007，61274044）、北京市自然科学基金（批准号：4132069）和教育部长江学者和创新团队发展计划（批准号：IRT0609）资助的课题.

Authors and contacts

1.
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007, 61274044), the Natural Science Foundation of Beijing, China (Grant No. 4132069), and the Program for Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China (Grant No. IRT0609).

参考文献

[1]	Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Tech. Dig. 13 166
[2]	Jun D H, Jang J H, Adesida I, Song J I 2006 Jpn. J. Appl. Phys. 45 3475
[3]	Wang X, Duan N, Chen H, Campbell J C 2007 IEEE Photon. Technol. Lett. 19 1272
[4]	Chtioui M, Lelarge F, Enard A, Pommereau F, Carpentier D, Marceaux A, Dijk F V, Achouche M 2012 IEEE Photon. Technol. Lett. 24 318
[5]	Zhang R, Hraimel B, Li X, Zhang P, Zhang X 2013 Opt. Express 21 6943
[6]	Shi J W, Kuo F M, Bowers J E 2012 IEEE Photon. Technol. Lett. 24 533
[7]	Li Z, Pan H, Chen H, Beling A, Campbell J C 2010 IEEE J. Quantum Electron. 46 626
[8]	Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭建川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 物理学报 59 4524]
[9]	Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 物理学报 61 138501]
[10]	Li C, Xue C L, Li C B, Liu Z, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 118503
[11]	Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 Jpn. J. Appl. Phys. 36 6263
[12]	Ishibashi T, Furuta T, Fushimi H, Ito H 2001 Ishibashi T, Furuta T, Fushima H, Ito H 2001 Proceedings of SPIE San Jose, USA, Jan. 19-25, 2001 p469
[13]	Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. E83-C 938
[14]	Pan H, Wang X, Beling A, Chen H, Campbell J C 2007 International Conference on Numerical Simulation of Optoelectronic Devices Newark, USA Sep. 24-28, 2007 p79
[15]	Shi T, Xiong B, Sun C, Luo Y 2011 Chin. Opt. Lett. 9 082302

施引文献

[1]	Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Tech. Dig. 13 166
[2]	Jun D H, Jang J H, Adesida I, Song J I 2006 Jpn. J. Appl. Phys. 45 3475
[3]	Wang X, Duan N, Chen H, Campbell J C 2007 IEEE Photon. Technol. Lett. 19 1272
[4]	Chtioui M, Lelarge F, Enard A, Pommereau F, Carpentier D, Marceaux A, Dijk F V, Achouche M 2012 IEEE Photon. Technol. Lett. 24 318
[5]	Zhang R, Hraimel B, Li X, Zhang P, Zhang X 2013 Opt. Express 21 6943
[6]	Shi J W, Kuo F M, Bowers J E 2012 IEEE Photon. Technol. Lett. 24 533
[7]	Li Z, Pan H, Chen H, Beling A, Campbell J C 2010 IEEE J. Quantum Electron. 46 626
[8]	Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭建川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 物理学报 59 4524]
[9]	Zhang L Z, Zuo Y H, Cao Q, Xue C L, Cheng B W, Zhang W C, Cao X L, Wang Q M 2012 Acta Phys. Sin. 61 138501 (in Chinese) [张岭梓, 左玉华, 曹权, 薛春来, 成步文, 张万昌, 曹学蕾, 王启明 2012 物理学报 61 138501]
[10]	Li C, Xue C L, Li C B, Liu Z, Cheng B W, Wang Q M 2013 Chin. Phys. B 22 118503
[11]	Ishibashi T, Kodama S, Shimizu N, Furuta T 1997 Jpn. J. Appl. Phys. 36 6263
[12]	Ishibashi T, Furuta T, Fushimi H, Ito H 2001 Ishibashi T, Furuta T, Fushima H, Ito H 2001 Proceedings of SPIE San Jose, USA, Jan. 19-25, 2001 p469
[13]	Ishibashi T, Furuta T, Fushimi H, Kodama S, Ito H, Nagatsuma T, Shimizu N, Miyamoto Y 2000 IEICE Trans. Electron. E83-C 938
[14]	Pan H, Wang X, Beling A, Chen H, Campbell J C 2007 International Conference on Numerical Simulation of Optoelectronic Devices Newark, USA Sep. 24-28, 2007 p79
[15]	Shi T, Xiong B, Sun C, Luo Y 2011 Chin. Opt. Lett. 9 082302

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