硅基槽式纳米线多模干涉型模阶数转换器全矢量分析

肖金标; 王登峰

doi:10.7498/aps.66.074203

摘要

提出了一种基于硅基槽式纳米线结构的紧凑式12多模干涉器型模阶数转换器，其中输入/输出通道为槽式直波导，经线性锥形过渡器连接居于中心的二次锥形槽式多模波导.采用全矢量频域有限差分法详细分析了垂直槽波导的模式特性，选取电场主分量Ey得到增强的quasi-TM模作为转换器的光信号模式.对比分析了矩形结构与二次锥形结构中的周期自镜像效应，发现二次锥形结构尺寸更短、损耗更低的特点.根据自镜像效应中一阶模成像位置设计多模干涉区域长度，经线性锥形过渡器从较宽输出端口输出一阶模，从较窄输出端口输出基模，从而实现模阶数转换功能.采用三维有限时域差分法详细分析了该转换器的光波传输特性，详细讨论了器件关键结构参数的制作容差.参数优化结果表明，该转换器的多模干涉区域的尺寸为35 m2时，在1.55 m工作波长下，quasi-TM基模在输出quasi-TM一阶模端口的插入损耗约为0.35 dB，输出波导间的串扰约为-16.9 dB.另外，给出了输入模场主分量在器件中的传输演变情况.

关键词:

Abstract

Recently, silicon-based photonic integrated circuits (PICs) have attracted considerable interest due to the advantages of high index contrast and complementary metal oxide semiconductor compatible process. Furthermore, to meet the ever-growing bandwidth requirements for data center and supercomputing, several multiplexing on-chip technologies by using silicon PICs are proposed. Among them, the mode division multiplexing (MDM) is widely recognized to be important, where mode-order converters (MOCs) are fundamental building blocks. In addition, slot waveguides can efficiently confine the light in low-index regions, thus forming various kinds of novel photonic devices. In this paper, a compact 12 multimode interference (MMI) mode-order converter (MOC) for silicon-based slot nanowires is proposed, where straight waveguides, as the input/output channels, are connected to a quadratic-tapered multimode waveguide via linear-tapered waveguides. A full-vectorial finite-difference frequency-domain method is used to analyze the modal characteristics of the used silicon-based vertical slot waveguides; from this, quasi-TM mode is chosen as an input optical signal since its field distribution is strongly confined in the slot, i. e., the electric field strength is greatly enhanced in the vertical slot, and with the increase of the width of the slot waveguide, it can support higher-order quasi-TM modes. Compared with the beating length of rectangular MMI structure, the beating length of quadratic-tapered MMI structure can be effectively reduced with transmission loss lowering. From the imaging position of the guided-mode in MMI region via self-imagining effect, the length of quadratic-tapered MMI structure can be determined accurately where first-order and fundamental quasi-TM modes are outputs, respectively, from wider and narrower channels. A three-dimensional finite-difference time-domain method is utilized to assess the performance of the proposed MOC, where the insertion loss and crosstalk are analyzed in detail. The results show that an MOC with an MMI section of 35 m2 is achieved to be an insertion loss and a crosstalk of~0.35 dB and~-16.9 dB, respectively, at a wavelength of 1.55 m by carefully optimizing the key structural parameters. Moreover, the fabrication deviation of the proposed device is also analyzed in detail and the performance is evaluated, where insertion loss and the contrast are considered. To demonstrate the transmission characteristics of the proposed MOC, the evolution of the excited fundamental quasi-TM mode through the MOC is also presented. Numerical results show that the presented MOC realizes the desired function, converting the fundamental quasi-TM mode into first-order one with reasonable performance. We remark that the present MOC has a good potential application in MDM system to improve the capacity of the silicon-based on-chip transmission system.

Keywords:

作者及机构信息

1.
东南大学电子科学与工程学院, 南京 210096

通信作者: 肖金标, jbxiao@seu.edu.cn

基金项目: 国家自然科学基金（批准号：11574046，60978005）和江苏省自然科学基金（批准号：BK20141120）资助的课题.

Authors and contacts

1.
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

Corresponding author: Xiao Jin-Biao, jbxiao@seu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11574046, 60978005) and the Jiangsu Provincial Natural Science Foundation, China (Grant No. BK20141120).

参考文献

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施引文献

[1]	Paul D J 2009 Electron. Lett 45 582
[2]	Jalali B, Fathpour S 2007 J. Lightwave Technol. 24 4600
[3]	Haralick R M 1979 Proc. IEEE 67 786
[4]	Liu A S, Liao L, Chetrit Y, Hat B N, Rubin D, Panicca M 2010 IEEE J. Sel. Top. Quantum Electron. 16 23
[5]	Deng L, Pang X D, Othman M B, Jensen J B, Zibar B, Yu X B, Liu D M, Monroy I T 2012 Opt. Express 20 4369
[6]	Sjdin M, Agrell E, Johannisson P, Lu G W, Andrekson P A, Karlsson M 2011 J. Lightwave Technol. 29 1219
[7]	Randel S, Ryf R, Sierra A, Winzer P J, Gnauck A H, Bolle C A, Essiambre R J, Peckham D W, McCurdy A, Lingle R 2011 Opt. Express 19 16697
[8]	SalsiM, KoebeleC, Sperti D, Tran P, Mardoyan H, Brindel P, Bigo S, Boutin A, Verluise F, Sillard P, Astruc M B, Provost L, Charlet G 2012 J. Lightwave Technol. 30 618
[9]	Richardson D J, Fini J M, Nelson L E 2013 Nat. Photon. 7 354
[10]	Foland S, Liu K, Choi K H, Macfarlane D, Lee J B 2011 11th IEEE International Conference on Nanotechnology Portland, Oregon, USA, August 15-18, 2011 p1483
[11]	Giles I, Obeysekara A, Chen R, Giles D, Poletti F, Richardson D 2012 IEEE Photon. Technol. Lett. 24 1922
[12]	Igarashi K, Souma D, Tsuritani T, Morita I 2014 Opt. Express 22 20881
[13]	Low A L Y, Yong Y S, You A H, Su F C, Teo C F 2004 IEEE Photon. Technol. Lett. 16 1673
[14]	Park J B, Yeo D M, Shin S Y 2006 IEEE Photon. Technol. Lett. 18 2084
[15]	Deng Q, Liu L, Li X, Zhou Z 2014 Opt. Lett. 39 5665
[16]	Xiao J B, Xu Y 2016 IEEE Photon. Technol. Lett. 28 1
[17]	Leuthold J, Joyner C H 2001 J. Lightwave Technol. 19 700
[18]	Singh G, Yadav R P, Janyani V 2010 Int. J. Commun. 2010 115
[19]	Wu J J 2008 Pier C 54 113
[20]	Tsao S L, Guo H C, Tsai C W 2004 Opt. Commun. 232 371
[21]	Poveda A C, Mnguez A H, Gargallo B, Biermann K, Tahraoui A, Santos P V, Munoz P, Cantarero A, Lima J M M D 2015 Opt. Express 23 21213
[22]	Yan C J 2008 Opt. Optoelectron. Technol. 6 88
[23]	Wang J H, Xiao J B, Sun X H 2015 Appl. Opt. 54 3805
[24]	Xu Y, Xiao J B 2015 IEEE Photon. Technol. Lett. 27 2071
[25]	Soldano L B, Pennings E C M 1995 J. Lightwave Technol. 13 615
[26]	Besse P A, Gini E, Bachmann M, Melchior H 1996 J. Lightwave Technol. 14 2286
[27]	Luo L W, Ophir N, Chen C P, Gabrielli L H, Poitras C B, Bergmen K, Lipson M 2014 Nat. Commun. 5 1661
[28]	Berenger J P 1994 J. Comput. Phys. 114 185
[29]	Xiao J B, Ni H X, Sun X H 2008 Opt. Lett. 33 1848
[30]	Zhao Y J, Wu K L, Cheng K K M 2002 IEEE Trans. Microw. Theory Tech. 50 1844
[31]	Oskooi A F, Roundy D, Ibanescu M, Bermel P, Joannopoulos J D, Johnson S G 2010 Comput. Phys. Commun. 181 687
[32]	Sullivan D M 2013 Electromagnetic Simulation Using the FDTD Method (New York:Wiley) pp85-96
[33]	Taflove A 1988 Wave Motion 10 547
[34]	Yee K S, Chen J S 1997 IEEE Trans. Antennas Propagat. 45 354
[35]	Chew W C, Liu Q H 1996 J. Comput. Acoust. 4 341
[36]	Mur G 1981 IEEE Trans. Electromagn. Compat. 4 377
[37]	Xiao J B, Liu X, Sun X 2008 Jpn. J. Appl. Phys. 47 3748
[38]	Xiao J B, Liu X, Sun X 2007 Opt. Express 15 8300

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