AlxGa1–xN插入层对双沟道n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMT器件性能的影响

蔡静; 姚若河; 耿魁伟

doi:10.7498/aps.71.20220403

摘要

双沟道AlGaN/GaN HEMT器件在电子限域性、电流运输等方面优于单沟道结构, 且能更好地缓解电流崩塌, 提高设备的运行能力, 在高功率应用中具有重要意义. 本文对n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN结构中的电荷状态以及运输性质进行研究. 通过求解一维薛定谔方程和泊松方程, 获得其电势、电场和电子分布, 分析了双沟道中二维电子气状态与合金无序散射、位错散射的关系. 结果表明, 在第一沟道中, 当Al_xGa_1–xN的Al组分和厚度提升时, 二维电子气密度逐渐减小, 合金无序散射的减弱使迁移率增大, 位错散射增强致迁移率变小, 总迁移率主要由合金无序散射决定. 在第二沟道中, 当Al_xGa_1–xN的Al组分和厚度提升时, 二维电子气密度随之增大, 由于较低的势垒高度以及高渗透电子的作用, 第二沟道中的合金无序散射影响更大, 合金无序散射迁移率随Al_xGa_1–xN层的Al组分和厚度的增加而减少且变化趋势逐渐趋于平缓, 位错散射作用的减弱导致迁移率的提升. 总体上, 第一沟道势阱中受到的位错散射低于第二沟道势阱. 随着背势垒厚度的增加, 第二沟道中主导的散射机制逐渐从位错散射转为合金无序散射.

关键词:

双沟道 /
2 DEG /
迁移率

Abstract

With the demand for high-temperature, high-frequency, and high-power microwave applications increasing, AlGaN/GaN high electron mobility transistors (HEMT) have attracted much attention in recent years. Two-dimensional electron gas (2DEG) induced by spontaneous polarization and piezoelectric polarization caused by the uneven charge distribution on Ga-N bond and the large tensile strain guarantees the high performance of AlGaN/GaN HEMT. Compared with single-channel devices, dual-channel AlGaN/GaN HEMT has great application prospects in enhancing the electronic confinement, current drive and alleviating the current collapse. In order to study the physical characteristics, the carrier state and transportation characterization of n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN multilayer structure are investigated. By calculating the one-dimensional self-consistent Poisson-Schrödinger, the energy band diagram, electric field and charge distribution in the devices are obtained. The 2DEG, alloy disorder and dislocation scattering mechanism in the device are also analyzed by analytical models in which the wave function in finite barriers and Fermi’s rule are used.With Al_xGa_1–xN layer thickness increasing from 0 nm to 30 nm and Al content rising from 0.1 to 0.2, the concentration of 2DEG localized in the heterointerface is diminished in the first channel. Simultaneously, mobility limited by alloy disorder scattering increases monotonically with the r composition occupation number and the Al_xGa_1–xN thickness proportion increasing. Besides, dislocation scattering on carriers is strengthened in the same quantum well, resulting in the lower mobility. In the second channel, 2DEG density gets growing when the variables mentioned above is enlarged. The mobility restricted by alloy disorder scattering shows a reverse trend with the variation of the Al_xGa_1–xN thickness and Al fraction, which more greatly affect the carriers in the parasitic channel due to the lower barrier height and high permeable carriers. Furthermore, the effect of dislocation scattering on channel electrons is gradually weakened, resulting in an increasing mobility. In general, The dislocation scattering effect in the second channel is intenser than that in the first channel.

Keywords:

作者及机构信息

1.
华南理工大学微电子学院, 广州　510640

2.
中新国际联合研究院, 广州　510700

通信作者: 姚若河, phrhyao@scut.edu.cn

基金项目: 国家重点研发计划(批准号: 2018YFB1802100)和广东省重点领域研发计划(批准号: 2019B010143003)资助的课题.

Authors and contacts

1.
School of Microelectronics, South China University of Technology, Guangzhou 510640, China

2.
Sino-Singapore International Joint Research Institute, Guangzhou 510700, China

Corresponding author: Yao Ruo-He, phrhyao@scut.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2018YFB1802100) and the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2019B010143003).

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参考文献

[1]	Mishra U K, Parikh P, Wu Y F 2002 Proc. IEEE 90 1022 Google Scholar
[2]	Mohammad S N, Salvador A A, Morkoc H 1995 Proc. IEEE 83 1306 Google Scholar
[3]	Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishrab U K 2000 Appl. Phys. Lett. 77 250 Google Scholar
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[7]	Kwon H K, Eiting C J, Lambert D J H, Shelton B S, Wong M M, Zhu T G, Dupuisa R D 1999 Appl. Phys. Lett. 75 2788 Google Scholar
[8]	Chu R M, Zhou Y G, Zheng Y D, Han P, Shen B, Gu S 2001 Appl. Phys. Lett. 79 2270 Google Scholar
[9]	Fan Z F, Lu C Z, Botchkarev A E, Tang H, Salvador A, Aktas O, Kim W, Morkog H 1997 Electron. Lett. 33 814 Google Scholar
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[18]	Visalli D, Hove M V, Derluyn J, Cheng K, Degroote S, Leys M, Germain M, Borghs G 2009 Phys. Status Solidi C 6 S988
[19]	Yu H B, Lisesivdin S B, Bolukbas B, Kelekci O, Ozturk M K, Ozcelik S, Caliskan D, Ozturk M, Cakmak H, Demirel P, Ozbay E 2010 Phys. Status Solidi A 207 2593 Google Scholar
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[21]	Fang F F, Howard W E 1966 Phys. Rev. Lett. 16 797 Google Scholar
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施引文献

图 1 AlGaN/GaN HEMT的(a)基本结构和(b)能带图

Fig. 1. (a) Schematic structure and (b) band diagram of AlGaN/GaN HEMT.

下载: 全尺寸图片幻灯片

图 2 n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN外延结构及极化电荷、电子分布

Fig. 2. Polarization charge and electron distribution of n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN epitaxial structure.

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图 3 不同Al组分下n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN中的(a)能带图和(b)电子分布

Fig. 3. (a) Band diagram and (b) electron concentration distribution in n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN with varying Al composition of the Al_xGa_1–xN layer.

下载: 全尺寸图片幻灯片

图 4 不同Al组分下n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN中电场的分布

Fig. 4. Electric field distribution in n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN with varying Al composition of the Al_xGa_1–xN layer.

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图 5 n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN结构在不同背势垒厚度下的(a)势能和(b)电子分布

Fig. 5. (a) Band diagram and (b) electron concentration distribution in n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN with varying thickness of Al_xGa_1–xN layer.

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图 6 不同背势垒厚度下n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN的电场分布

Fig. 6. Electric field distribution in n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN with varying thickness of Al_xGa_1–xN layer.

下载: 全尺寸图片幻灯片

图 7 2DEG密度与Al_xGa_1–xN厚度在不同Al组分下的关系曲线　(a) channel 1; (b) channel 2

Fig. 7. The relationship between the Al_xGa_1–xN thickness and 2DEG concentration of (a) channel 1 and (b) channel 2 under different Al mole fraction.

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图 8 不同Al组分下合金无序散射迁移率与Al_xGa_1–xN厚度的关系　(a) channel 1; (b) channel 2

Fig. 8. The relationship between the Al_xGa_1–xN thickness and mobility limited by alloy disorder scattering of (a) channel 1 and (b) channel 2 under different Al mole fraction

下载: 全尺寸图片幻灯片

图 9 不同Al组分下位错散射迁移率与Al_xGa_1–xN厚度的关系　(a) channel 1; (b) channel 2

Fig. 9. The relationship between the Al_xGa_1–xN thickness and mobility limited by dislocation scattering of (a) channel 1 and (b) channel 2 under different Al mole fraction

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图 10 不同Al组分下总迁移率与Al_xGa_1–xN厚度的关系　(a) channel 1; (b) channel 2

Fig. 10. The relationship between the Al_xGa_1–xN thickness and the total mobility of (a) channel 1 and (b) channel 2 under different Al mole fraction

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图 11 不同Al组分下总迁移率和2DEG的乘积与Al_xGa_1–xN厚度的关系　(a) channel 1; (b) channel 2

Fig. 11. The relationship between the Al_xGa_1–xN thickness and the product of mobility and 2DEG sheet density of (a) channel 1 and (b) channel 2 under different Al mole fraction

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表 1 AlN, GaN和Al_xGa_1–xN的各项结构参数(300 K)

Table 1. The key parameters of AlN, GaN and Al_xGa_{1 – x}N at temperature 300 K.

参数 AlN GaN Al_xGa_1–xN

A/(10^–10 nm) 3.112 3.189
C₁₃/GPa 108 103
C₃₃/GPa 373 405 xP_AlN+ (1 – x) P_GaN
e₃₁/(C·m^–2) –0.6 –0.49
e₃₃/(C·m^–2) 1.46 0.73
P_SP/(C·m^–2) –0.081 –0.029

下载: 导出CSV

表 2 沟道中2DEG在基态上的占比

Table 2. The proportion of 2DEG at the ground-state energy in channel 1 & channel 2.

x = 0.1 x = 0.15 x = 0.2 x = 0.25

N_{z–1 st}在基态E₀上的占比 0.9451 0.9669 0.9872 0.9909
N_{z–2 nd}在基态E₀上的占比 0.9651 0.9748 0.9850 0.9908

下载: 导出CSV

[1]	Mishra U K, Parikh P, Wu Y F 2002 Proc. IEEE 90 1022 Google Scholar
[2]	Mohammad S N, Salvador A A, Morkoc H 1995 Proc. IEEE 83 1306 Google Scholar
[3]	Ibbetson J P, Fini P T, Ness K D, DenBaars S P, Speck J S, Mishrab U K 2000 Appl. Phys. Lett. 77 250 Google Scholar
[4]	王现彬, 赵正平, 冯志红 2014 物理学报 63 080202 Google Scholar Wang X B, Zhao Z P, Feng Z H 2014 Acta Phys. Sin. 63 080202 Google Scholar
[5]	张雪冰, 刘乃漳, 姚若河 2020 物理学报 69 157303 Google Scholar Zhang X B, Liu N Z, Yao R H 2020 Acta Phys. Sin. 69 157303 Google Scholar
[6]	Kranti A, Haldar S, Gupta R S 2002 Solid-State Electron. 46 621 Google Scholar
[7]	Kwon H K, Eiting C J, Lambert D J H, Shelton B S, Wong M M, Zhu T G, Dupuisa R D 1999 Appl. Phys. Lett. 75 2788 Google Scholar
[8]	Chu R M, Zhou Y G, Zheng Y D, Han P, Shen B, Gu S 2001 Appl. Phys. Lett. 79 2270 Google Scholar
[9]	Fan Z F, Lu C Z, Botchkarev A E, Tang H, Salvador A, Aktas O, Kim W, Morkog H 1997 Electron. Lett. 33 814 Google Scholar
[10]	Gaska R, Shur M S, Fjeldly T A 1999 J. Appl. Phys. 85 3009 Google Scholar
[11]	Chu R, Zhou Y, Jie L, Wang D, Chen K J, Lau K M 2005 IEEE Trans. Electron Devices 52 438 Google Scholar
[12]	Quan S, Hao Y, Ma X, Zheng P, Xie Y 2010 J. Semicond. 31 044003 Google Scholar
[13]	Zhang Y., Li Y., Wang J, Shen Y, Hao Y 2020 Nanoscale Res. Lett. 15 1 Google Scholar
[14]	王冲, 赵梦荻, 裴九清 2016 物理学报 65 038501 Google Scholar Wang C, Zhao M D, Pei J Q 2016 Acta Phys. Sin. 65 038501 Google Scholar
[15]	Lee Y J, Yao Y C, Huang C Y, Lin T Y, Cheng L L, Liu C Y, Wang M T Hwang J M 2014 Nanoscale Res. Lett. 9 433 Google Scholar
[16]	Chakraborty A, Ghosh S, Mukhopadhyay P, Jana S K, Dinara S M, Bag A, Mahata M K, Kumar R, Das S, Das P, Biswas D 2016 Electron. Mater. Lett. 12 232 Google Scholar
[17]	Chen C Q, Zhang J P 2003 Appl. Phys. Lett. 82 4593 Google Scholar
[18]	Visalli D, Hove M V, Derluyn J, Cheng K, Degroote S, Leys M, Germain M, Borghs G 2009 Phys. Status Solidi C 6 S988
[19]	Yu H B, Lisesivdin S B, Bolukbas B, Kelekci O, Ozturk M K, Ozcelik S, Caliskan D, Ozturk M, Cakmak H, Demirel P, Ozbay E 2010 Phys. Status Solidi A 207 2593 Google Scholar
[20]	Martins J L, Zunger A 1984 Phys. Rev. B 30 6217 Google Scholar
[21]	Fang F F, Howard W E 1966 Phys. Rev. Lett. 16 797 Google Scholar
[22]	Shur M S, Bykhovski A D, Gaska R 2000 Solid-State Electron. 44 205 Google Scholar
[23]	Walukiewicz W, Ruda H E 1984 Phys. Rev. B 30 4571 Google Scholar
[24]	Jena D, Gossard A C, Mishra U K 2000 Appl. Phys. Lett. 76 1707 Google Scholar
[25]	Miyoshi M, Egawa T, Ishikawa H 2015 J. Vac. Sci. Technol. , B 23 1527
[26]	Leung K, Wright A F, Stechel E B 1999 Appl. Phys. Lett. 74 2495 Google Scholar

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Al_xGa_1–xN插入层对双沟道n-Al_0.3Ga_0.7N/GaN/i-Al_xGa_1–xN/GaN HEMT器件性能的影响