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吉帕级单轴应力下Mn3Sn单晶的磁化率增强

邓珊珊 宋平 刘潇贺 姚森 赵谦毅

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吉帕级单轴应力下Mn3Sn单晶的磁化率增强

邓珊珊, 宋平, 刘潇贺, 姚森, 赵谦毅

Enhancement of magnetic susceptibility of Mn3Sn single crystal under GPa-level uniaxial stress

Deng Shan-Shan, Song Ping, Liu Xiao-He, Yao Sen, Zhao Qian-Yi
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  • 如何在室温下实现非共线反铁磁Mn3Sn自旋的调控是一项挑战. 本文通过对Mn3Sn单晶施加GPa级单轴应力调控其磁结构, 发现随着应力的增大, 晶格常数a逐渐减小. 此外, GPa级单轴应力使Mn3Sn的磁化率(χ)不同于MPa级单轴应力下的结果, 其值不再是一个定值, 而是随着应力的增大而增大. 当沿$ \text{[11}\bar{2}\text{0]} $方向施加1.12 GPa应力后, χ达到0.0203 μB/(f.u.·T); 当沿$ \text{[01}\bar{1}\text{0]} $方向施加1.11 GPa后, χ达到0.0332 μB/(f.u.·T), 为未变形样品的2.4倍. 进一步的实验结果表明, GPa级的单轴应力打破了kagome晶格的面内六边形的对称性, 从而改变Mn原子间的交换相互作用, 增强体系的反铁磁耦合作用, 使χ不再是一个定值. 这一发现将会为反铁磁自旋调控提供新的思路.
    How to achieve spin control of noncollinear antiferromagnetic Mn3Sn at room temperature is a challenge. In this study, we modulate the magnetic structure of Mn3Sn single crystals by subjecting them to uniaxial stress at the GPa level using a high-pressure combined deformation method. Initially, the single crystal is sliced into regular cuboids, then embedded in a stainless steel sleeve, and finally, uniaxial stress is applied along the $ \text{[11}\bar{2}\text{0]} $ direction and $ \text{[01}\bar{1}\text{0]} $ direction of the Mn3Sn single crystal. Under high stress, the single crystal undergoes plastic deformation. Our observations reveal lattice distortion in the deformed single crystal, with the lattice parameter gradually decreasing as the stress level increases. In addition, the magnetic susceptibility of Mn3Sn under GPa uniaxial stress (χ) is different from that under MPa uniaxial stress, and its value is no longer fixed but increases with the increase of stress. When 1.12 GPa stress is applied in the $ \text{[11}\bar{2}\text{0]} $ direction, χ reaches 0.0203 $ {\text{μ}}_{\text{B}}\text{}{\text{f.u.}}^{{-1}}\text{}{\text{T}}^{{-1}} $, which is 1.42 times that of the undeformed sample. In the case of stress applied along the $ \text{[01}\bar{1}\text{0]} $ direction, χ ≈ 0.0332 $ {\text{μ}}_{\text{B}}\text{}{\text{f.u.}}^{{-1}}\text{}{\text{T}}^{{-1}} $ when the stress is 1.11 GPa. This result is also 2.66 times greater than the reported results. We further calculate the values of trimerization parameter (ξ), isotropic Heisenberg exchange interaction (J), and anisotropic energy (δ) of the system under different stresses. Our results show that ξ gradually increases, J gradually decreases, and δ gradually increases with the increase of stress. These results show that the GPa uniaxial stress introduces anisotropic strain energy into the single crystal, breaking the symmetry of the in-plane hexagon of the kagome lattice, which causes the bond length of the two equilateral triangles composed of Mn atoms to change. Thus, the exchange coupling between Mn atoms in the system is affected, the anisotropy of the system is enhanced, and the antiferromagnetic coupling of the system is enhanced. Therefore, the system χ is no longer a constant value and gradually increases with the increase of stress. This discovery will provide new ideas for regulating the anti-ferromagnetic spin.
  • 图 1  (a) Mn3Sn晶体结构图; (b) Mn3Sn磁结构图; (c), (d) Sn助熔剂法制得的单晶; (e)晶向标定示意图

    Fig. 1.  (a) Mn3Sn crystal structure diagram; (b) Mn3Sn magnetic structure diagram; (c), (d) single crystal obtained by Sn flux method; (e) crystal orientation calibration diagram.

    图 2  Mn3Sn单晶高压变形示意图

    Fig. 2.  Schematic diagram of Mn3Sn single crystal deformation under high pressure.

    图 3  (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力变形前后的XRD图; (c), (e)变形前$ \text{(11}\bar{2}\text{0)} $, $ \text{(01}\bar{1}\text{0)} $晶面的HRTEM图; (d), (f)变形前$ \text{(11}\bar{2}\text{0)} $, $ \text{(01}\bar{1}\text{0)} $晶面的SAED图; (g), (h)变形后$ \text{(11}\bar{2}\text{0)} $晶面的HRTEM图; (i), (j)变形后$ \text{(01}\bar{1}\text{0)} $晶面的HRTEM图

    Fig. 3.  (a), (b) XRD patterns before and after stress deformation along $ \text{[11}\bar{2}\text{0]} $ and $ \text{[01}\bar{1}\text{0]} $ directions; (c), (e) HRTEM images of $ \text{(11}\bar{2}\text{0)} $ and $ \text{(01}\bar{1}\text{0)} $ crystal faces before deformation; (d), (f) SAED patterns of $ \text{(11}\bar{2}\text{0)} $ and $ \text{(01}\bar{1}\text{0)} $ crystal faces before deformation; (g), (h) HRTEM images of $ \text{(11}\bar{2}\text{0)} $ crystal face after deformation; (i), (j) HRTEM images of $ \text{(01}\bar{1}\text{0)} $ crystal face after deformation.

    图 4  (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后样品的磁滞回线; (c), (d)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后样品的磁化率χ和剩磁Mr随应力的变化

    Fig. 4.  (a), (b) Hysteresis loops of samples before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $and $ \text{[01}\bar{1}\text{0]} $ directions; (c), (d) the changes of magnetic susceptibility χ and remanence Mr of sample demagnetization curve with stress before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $and $ \text{[01}\bar{1}\text{0]} $ directions.

    图 5  (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后三聚参数ξ随应力的变化; (c), (d)黑色曲线为沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力前后单晶的各向同性海森伯交换作用J, 红色曲线为沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力前后单晶的各向异性能δ

    Fig. 5.  (a), (b) Changes of trimerization parameters ξ with stress before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $and $ \text{[01}\bar{1}\text{0]} $ directions. (c), (d) The black curve shows the isotropic Heisenberg exchange J of a single crystal before and after stress is applied in along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $and $ \text{[01}\bar{1}\text{0]} $ directions. The red curve shows the anisotropic energy δ of a single crystal before and after stress is applied in $ \text{[11}\bar{2}\text{0]}\text{} $and $ \text{[01}\bar{1}\text{0]} $ directions.

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  • 收稿日期:  2024-02-23
  • 修回日期:  2024-04-28
  • 上网日期:  2024-04-29

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