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光伏技术快速发展的背景下，晶硅太阳电池作为主流的光伏器件，其性能的提升成为研究的热点。晶硅太阳电池包括了硅异质结（SHJ）太阳电池、隧穿氧化物钝化接触（TOPCon）太阳电池及钝化发射极和背面接触（PERC）太阳电池。晶硅太阳电池的表面钝化层作为提升电池性能的关键之一，其发展历程与晶硅太阳电池的发展紧密相连。然而，由于钝化层的复杂机制和实验研究的高要求，实现高质量的表面钝化面临挑战。本文综述了SHJ太阳电池、TOPCon和PERC太阳电池界面钝化技术的关键问题和研究进展，首先系统地回顾了SHJ太阳电池关键技术突破的研究进展，并讨论了生长条件对SHJ太阳电池钝化性能的影响以及掺杂层对本征层和钝化性能的影响作用；其次，阐述了近五年来提升TOPCon和PERC太阳电池钝化性能的重要策略和研究成果；最后给出钝化层技术的发展趋势展望。本论文将为晶硅太阳电池未来技术改进和性能提升提供有价值的参考。Under the background of rapid advancements in photovoltaic technology, crystalline silicon (c-Si) solar cells, as the mainstream photovoltaic devices, have gained significant research attention for their excellent performances. In particular, silicon heterojunction (SHJ) solar cells, TOPCon (Tunnel Oxide Passivated Contact), and PERC (Passivated Emitter and Rear Cell) represent the cutting-edge technologies in c-Si solar cells. The surface passivation layer of crystalline silicon solar cells, as one of the key factors to improve cell performances, has been closely linked to the development of crystalline silicon solar cells. Due to the complex mechanism of passivation layer and the high demand of experimental research, it is challenging to achieve high quality surface passivation. This paper comprehensively reviews the key issues and research progress in interface passivation technologies for SHJ, TOPCon, and PERC solar cells. Firstly, the research progress of key technology breakthrough of SHJ solar cell is reviewed systematically, and the influences of growth conditions and doping layer on the passivation performances of SHJ solar cell are discussed in detail. Secondly, the important strategies and research achievements for improving the passivation performances of TOPCon and PERC solar cells in the past five years are systematically described. Finally, the development trend of passivation layer technology is prospected. This review offers valuable insights for future technological improvements and performance enhancements in c-Si solar cells.
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Keywords:
- Crystalline silicon solar cell /
- passivation layer /
- heterojunction /
- amorphous silicon /
- silicon oxide layer /
- minority carrier lifetime /
- photoelectric performances
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