搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

用电发光法测量碳化硅少数载流子寿命的若干问题

虞孝栋 吴道怀 唐福娣 谭浩然

引用本文:
Citation:

用电发光法测量碳化硅少数载流子寿命的若干问题

虞孝栋, 吴道怀, 唐福娣, 谭浩然

MINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD

YUI SHOU-DUNG, WOO DAU-WEI, TON FU-DI, TAM HOA-YEN
PDF
导出引用
  • 本文介绍一种测量碳化硅半导体少数载流子寿命的方法,叙述有关的原理和测试设备,并就对测试结果有极大影响的谐振干扰、点接触的电学性质和电发光特性等问题进行了试验。提出了若干可以避兔谐振干扰、防止触点旁路并控制整流比的有效措施。推荐采用焊铟方法制备低阻接触。指出,为了保证实验结果的可靠性,测试前必须了解样品的发光特性。采用这种方法测定了若干碳化硅单晶的少数载流子寿命,测得值一般低于4.2×10-9秒。
    A method for measuring the minority carrier lifetime in silicon carbide semiconductor by the injection electroluminescence at point contacts is presented. The principles involved and measuring equipment used are described. Experiments on some important factors, such as resonance disturbance, electrical properties and electroluminescence characteristics of the point contacts, have been performed. Some feasible precautions that must be taken in order to avoid resonance disturbance and contact by-passing and to control rectification ratios are described. It is shown that in order to ensure reliability of experimental results, a knowledge of the electroluminescence characteristics of the samples should be required before measuring. By means of this method, the minority carrier lifetimes for some silicon carbide single crystals have been measured, and for most crystals these values are found to be smaller than 4.2×10-9 sec.
  • [1]
计量
  • 文章访问数:  6585
  • PDF下载量:  556
  • 被引次数: 0
出版历程
  • 收稿日期:  1966-01-26
  • 刊出日期:  2005-08-05

/

返回文章
返回