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研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2ML GaSb/1ML GaAs复合应力缓冲层上获得了高密度的、沿［100］方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同，量子点的密度可以在1.2×1010cm-2和8×1010cm-2进行调控.适当增加GaAs层的厚度至5ML，量子点的发光波长红移了约25nm，室温下PL光谱波长接近1300nm.
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关键词:
- 自组装量子点 /
- 分子束外延 /
- Ⅲ-Ⅴ族化合物半导体
Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence (PL) and atomic force microscopy (AFM). The QD density varies from 1.2×10cm-2 to 8.0×10cm-2 due to the influence of the lattice mismatch. The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratio，which resulted in the red-shift of the emission peaks.For the sample of 5ML GaAs thin film the ground state transition is shifted to nearly 1300nm at room temperature.
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