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IrMn基反铁磁自旋阀的巨磁电阻效应

贾兴涛 夏钶

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IrMn基反铁磁自旋阀的巨磁电阻效应

贾兴涛, 夏钶

Giant magnetoresistance in IrMn based antiferromagnetic spin valve

Jia Xing-Tao, Xia Ke
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  • 用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L12相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7%,大约是电流垂直平面构型的GMR(3.4%)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR.
    According to the parameter-free first principles calculations, we investigate the spin polarized transport in antiferromagnetic spin valve (AFSV) based on noncollinear IrMn. The giant magnetoresistance (GMR) in Co/IrMn/Cu(111) with L12-type IrMn shows three-fold rotational symmetry, which is easy to be distinguished from the GMR of normal ferromagnetic spin valves. Moreover, GMR based on -phase IrMn with current-in-plane (CIP) structure shows that GMR is 7.7%, around two time larger than that in current-pendicular-to-plane (CPP) structure (3.4%). Our study demonstrates that the AFSV CIP structure possesses a larger GMR effect than the CPP structure, and the GMR effect in AFSV based on noncollinear antiferromagnetic structure is larger than that based on collinear antiferromagnetic structure such as FeMn.
    • 基金项目: 中央高等学校基本科研基金(批准号:101-105115)资助的课题.
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  • [1]

    Parkin S S 1991 Phys. Rev. Lett. 67 3598

    [2]

    Slonczewski J C 1996 J. Magn. Magn. Mater. 159 L1

    [3]
    [4]

    Berger L 1996 Phys. Rev. B 54 9353

    [5]
    [6]

    Kubetzka A, Bode M, Pietzsch O, Wiesendanger R 2002 Phys. Rev. Lett. 88 057201

    [7]
    [8]
    [9]

    Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413

    [10]
    [11]

    Nunez A S, Duine R A, Haney P, MacDonald A H 2006 Phys. Rev. B 73 214426

    [12]
    [13]

    Xu Y, Wang S, Xia K 2007 Phys. Rev. Lett. 100 6602

    [14]
    [15]

    Wei Z, Sharma A, Bass J, Tsoi M 2009 J. Appl. Phys. 105 07D113

    [16]

    Sakuma A, Fukamichi K, Sasao K, Umetsu R Y 2003 Phys. Rev. B 67 024420

    [17]
    [18]
    [19]

    Vitos L, Skriver H L, Johansson B, Kollar J 2000 Comput. Mater. Sci. 18 24

    [20]
    [21]

    Vitos L 2001 Phys. Rev. B 64 014107

    [22]
    [23]

    Pourovskii L V, Ruban A V, Vitos L, Ebert H, Johansson B, Abrikosov I A 2005 Phys. Rev. B 71 094415

    [24]

    Andersen O K, Jepsen O, Krier G 1994 Lecture on Methods of Electronic Structure Calculations (Singapore: World Scientific) p63

    [25]
    [26]

    Vosko S H, Wilk L, Nusair M 1980 Can. J. Phys. 58 1200

    [27]
    [28]

    Ruban A V, Simak S I, Korzhavyi P A, Skriver H L 2002 Phys. Rev. B 66 024202

    [29]
    [30]

    Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge: Cambridge University Press) p1

    [31]
    [32]
    [33]

    Xia K, Zwierzycki M, Talanana M, Kelly P J, Bauer G E W 2006 Phys. Rev. B 73 064420

    [34]

    Schep K M, van Hoof J B A N, Kelly P J, Bauer G E W, Inglesfield J E 1997 Phys. Rev. B 56 10805

    [35]
    [36]
    [37]

    Wang L, Wang S G, Rizwan S, Qin Q H, Han X F 2009 Appl. Phys. Lett. 95 152512

    [38]
    [39]

    Gokemeijer N J, Ambrose T, Chie C L 1997 Phys. Rev. Lett. 79 4270

    [40]

    Cai J W, Lai W Y, Teng J, Shen F, Zhang Z, Mei L M 2004 Phys. Rev. B 70 214428

    [41]
计量
  • 文章访问数:  21957
  • PDF下载量:  788
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-02-12
  • 修回日期:  2011-05-26
  • 刊出日期:  2011-06-05

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