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Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

郭莉萍 杨万民 郭玉霞 陈丽平 李强

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Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

郭莉萍, 杨万民, 郭玉霞, 陈丽平, 李强

Effect of Ni2O3 doping on the properties of single domain GdBCO bulk superconductors fabricated by a new modified top-seeding infiltration and growth process

Guo Li-Ping, Yang Wan-Min, Guo Yu-Xia, Chen Li-Ping, Li Qiang
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  • 本文通过在新固相源中添加Ni2O3的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd2O3+1.2BaCuO2)+x Ni2O3、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni2O3的掺杂量x对样品的表面生长形貌、微观结构、临界温度Tc、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni2O3的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni2O3的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni2O3的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度Tc呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni3 +替代GdBCO晶体中Cu2 +所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni2O3的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni3+对Cu2 +的替代既不会造成Tc的明显下降, 但又能产生适量的Ni3 +/Cu2+ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.
    Single-domain GdBCO bulk superconductor (20 mm in diameter) has been fabricated by a top-seeding infiltration and growth (TSIG) mathod, it has a new solid phase of [(1-x)(Gd2O3+1.2BaCuO2) + x Ni2O3] (where x =0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%). Effect of Ni2O3 additions on the growth morphology, microstructure, critical temperature Tc, magnetic levitation force, and trapped flux of single-domain GdBCO bulks have been investigated. Results show that the single-domain GdBCO bulk can be gained when x is in the range of 0-0.50 wt%; and the Gd211 particles are not affected by the Ni2O3 doping in the samples. The Tc of the samples decrease from 92.5 K (x=0 wt%) to 86.5 K (x=0.50 wt%) when x increases from 0 to 0.50 wt%, which is caused by the substitution of Ni3+ for Cu2 +. Both of the levitation force and trapped field of the samples increase first and then decrease with the increase of x; the largest levitation force of 34.2 N is obtained for the samples with x=0.14 wt%, and the largest trapped field of 0.354 T is obtained for the samples with x=0.10 wt%. The change of the levitation force and trapped field of the samples is closely related to the doping content x. As is known, the doping of Ni2O3 can result in substitution of Ni3+ for Cu2+ at its site in GdBCO crystals, which can reduce the critical temperature Tc of the samples; although Tc and the physical properties of the samples is reduced with the increase in the doping amount of Ni2O3, but at the same time, the substitutions of Ni3 + for Cu2 + in GdBCO crystals can produce local lattice distortions, which can act as magnetic flux pinning centers to improve the properties of the samples. The highest Tc is obtained in the samples without any Ni2O3 additions (x=0), but the magnetic flux pinning force of the samples is weak, so both of the levitation force and trapped field of the samples are relatively lower. When the doping content x ≤ 0.14 wt%, although the Tc is reduced slightly, it still has a value higher than 90 K; and the magnetic flux pinning force in the samples, due to the substitutions of Ni3+ for Cu2 +, would increase with the increase of doping content x, and result in an enhancement of levitation force and trapped field. When the doping content x is greater than 0.14 wt%, the magnetic flux pinning force of the samples is still increasing with the increase of x, but the Tc of the sample is significantly reduced and even less than 90 K, and finally result in an decrease of levitation force and trapped field. Only when the doping amount of Ni2O3 is appropriate, both of Tc and magnetic flux pinning force are of a relative optimal value, and lead to an enhancement of levitation force and trapped field.
    • 基金项目: 国家自然科学基金(批准号: 51342001, 50872079, 51167016)、教育部科学技术研究重大项目(批准号: 311033)、高等学校博士学科点专项科研基金(批准号: 20120202110003)、陕西省重点科技创新团队项目(批准号: 2014KTC-18)和中央高校基本科研业务费专项资金(批准号: GK201101001, GK201305014)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51342001, 50872079, 51167016), the Foundation for Key Program of Ministry of Education, China (Grant No. 311033), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120202110003), the Key Program of Science and Technology innovation team of Shaanxi Province (Grant No. 2014KTC-18), and the Fundamental Research Funds for the Central Universities of Ministry of Education, China (Grant Nos. GK201101001, GK201305014).
    [1]

    Hari Babu N, Iida K, Cardwell D A 2006 Physica C 445-448 353

    [2]

    Yang W M, Zhou L, Feng Y, Zhang P X, Chao X X, Bian X B, Zhu S H, Wu X L, Liu P 2006 Supercond. Sci. Technol. 19 S537

    [3]

    Li G Z, Yang W M 2011 Acta Phys. Sin. 60 047401 (in Chinese) [李国政, 杨万民 2011 物理学报 60 047401]

    [4]

    Yang W M, Zhi X, Chen S L, Wang M, Li J W, Ma J, Chao X X 2014 Physica C 496 1

    [5]

    Kim Y, No K, Han Y H, Kim C J, Jun B H, Lee S Y, Youn J S, Sung T H 2011 Cryogenics 51 247

    [6]

    Hari Babu N, Iida K, Cardwell D A 2007 Supercond. Sci. Technol. 20 S141

    [7]

    Sha J J, Yao Z W, Yu J N, Yu G, Luo J H, Wen H H, Yang W L, Li S L 2000 Acta Phys. Sin. 49 1356 (in Chinese) [沙建军, 姚仲文, 郁金南, 郁刚, 罗金汉, 闻海虎, 杨万里, 李世亮 2000 物理学报 49 1356]

    [8]

    Wang M, Yang W M, Zhang X J, Tang Y N, Wang G F 2012 Acta Phys. Sin. 61 196102 (in Chinese) [王妙, 杨万民, 张晓菊, 唐艳妮, 王高峰 2012 物理学报 61 196102]

    [9]

    Wang M, Yang W M, M J, Tang Y N, Zhang X J, Wang G F 2012 Sci. Sin.-Phys. Mech. Astron. 42 346 (in Chinese) [王妙, 杨万民, 马俊, 唐艳妮, 张晓菊, 王高峰 2012 中国科学: 物理学力学天文学 42 346]

    [10]

    Li P L, Wang Y Y, Tian Y T, Wang J, Niu X L, Wang J X, Wang D D, Wang X X 2008 Chin. Phys. B 17 3484

    [11]

    Zhou Y X, Lo W, Tang T B, Salama K 2002 Supercond. Sci. Technol. 15 722

    [12]

    Shlyk L, Krabbes G, Fuchs G 2003 Physica C 390 325

    [13]

    Nariki S, Seo S J, Sakai N, Murakami M 2000 Supercond. Sci. Technol. 13 778

    [14]

    Yang W M, Chao X X, Shu Z B, Zhu S H, Wu X L, Bian X B, Liu P 2005 Chinese Journal of Low Temperature Physics 27 944 (in Chinese) [杨万民, 钞曦旭, 舒志兵, 朱思华, 武晓亮, 边小兵, 刘鹏 2005 低温物理学报 27 944]

    [15]

    Yang W M, Feng Y, Zhou L, Zhang P X, Wu M Z, Chen S K, Wu X Z, Gawalek W 1999 Physica C 319 164

    [16]

    Yang W M, Chao X X, Shu Z B, Zhu S H, Wu X L, Bian X B, Liu P 2006 Physica C 445-448 347

    [17]

    Hu A, Sakai N, Ogasawara K, Murakami M 2002 Physica C 366 157

    [18]

    Zhou D F, Xu K, Hara S, Li B Z, Izumi M 2013 Trans. Nonferrous Met. Soc. China 23 2042

    [19]

    Zhou Y X, Scruggs S, Salama K 2006 Supercond. Sci. Technol. 19 S556

    [20]

    Li P L, Cao G X, Deng D M, Cao S X, Zhang J C 2003 Chinese Journal of Low Temperature Physics 25 81 (in Chinese) [李平林, 曹桂新, 邓冬梅, 曹世勋, 张金仓 2003 低温物理学报 25 81]

  • [1]

    Hari Babu N, Iida K, Cardwell D A 2006 Physica C 445-448 353

    [2]

    Yang W M, Zhou L, Feng Y, Zhang P X, Chao X X, Bian X B, Zhu S H, Wu X L, Liu P 2006 Supercond. Sci. Technol. 19 S537

    [3]

    Li G Z, Yang W M 2011 Acta Phys. Sin. 60 047401 (in Chinese) [李国政, 杨万民 2011 物理学报 60 047401]

    [4]

    Yang W M, Zhi X, Chen S L, Wang M, Li J W, Ma J, Chao X X 2014 Physica C 496 1

    [5]

    Kim Y, No K, Han Y H, Kim C J, Jun B H, Lee S Y, Youn J S, Sung T H 2011 Cryogenics 51 247

    [6]

    Hari Babu N, Iida K, Cardwell D A 2007 Supercond. Sci. Technol. 20 S141

    [7]

    Sha J J, Yao Z W, Yu J N, Yu G, Luo J H, Wen H H, Yang W L, Li S L 2000 Acta Phys. Sin. 49 1356 (in Chinese) [沙建军, 姚仲文, 郁金南, 郁刚, 罗金汉, 闻海虎, 杨万里, 李世亮 2000 物理学报 49 1356]

    [8]

    Wang M, Yang W M, Zhang X J, Tang Y N, Wang G F 2012 Acta Phys. Sin. 61 196102 (in Chinese) [王妙, 杨万民, 张晓菊, 唐艳妮, 王高峰 2012 物理学报 61 196102]

    [9]

    Wang M, Yang W M, M J, Tang Y N, Zhang X J, Wang G F 2012 Sci. Sin.-Phys. Mech. Astron. 42 346 (in Chinese) [王妙, 杨万民, 马俊, 唐艳妮, 张晓菊, 王高峰 2012 中国科学: 物理学力学天文学 42 346]

    [10]

    Li P L, Wang Y Y, Tian Y T, Wang J, Niu X L, Wang J X, Wang D D, Wang X X 2008 Chin. Phys. B 17 3484

    [11]

    Zhou Y X, Lo W, Tang T B, Salama K 2002 Supercond. Sci. Technol. 15 722

    [12]

    Shlyk L, Krabbes G, Fuchs G 2003 Physica C 390 325

    [13]

    Nariki S, Seo S J, Sakai N, Murakami M 2000 Supercond. Sci. Technol. 13 778

    [14]

    Yang W M, Chao X X, Shu Z B, Zhu S H, Wu X L, Bian X B, Liu P 2005 Chinese Journal of Low Temperature Physics 27 944 (in Chinese) [杨万民, 钞曦旭, 舒志兵, 朱思华, 武晓亮, 边小兵, 刘鹏 2005 低温物理学报 27 944]

    [15]

    Yang W M, Feng Y, Zhou L, Zhang P X, Wu M Z, Chen S K, Wu X Z, Gawalek W 1999 Physica C 319 164

    [16]

    Yang W M, Chao X X, Shu Z B, Zhu S H, Wu X L, Bian X B, Liu P 2006 Physica C 445-448 347

    [17]

    Hu A, Sakai N, Ogasawara K, Murakami M 2002 Physica C 366 157

    [18]

    Zhou D F, Xu K, Hara S, Li B Z, Izumi M 2013 Trans. Nonferrous Met. Soc. China 23 2042

    [19]

    Zhou Y X, Scruggs S, Salama K 2006 Supercond. Sci. Technol. 19 S556

    [20]

    Li P L, Cao G X, Deng D M, Cao S X, Zhang J C 2003 Chinese Journal of Low Temperature Physics 25 81 (in Chinese) [李平林, 曹桂新, 邓冬梅, 曹世勋, 张金仓 2003 低温物理学报 25 81]

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  • 收稿日期:  2014-11-30
  • 修回日期:  2014-12-24
  • 刊出日期:  2015-04-05

Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

  • 1. 陕西师范大学物理学与信息技术学院, 西安 710062
    基金项目: 国家自然科学基金(批准号: 51342001, 50872079, 51167016)、教育部科学技术研究重大项目(批准号: 311033)、高等学校博士学科点专项科研基金(批准号: 20120202110003)、陕西省重点科技创新团队项目(批准号: 2014KTC-18)和中央高校基本科研业务费专项资金(批准号: GK201101001, GK201305014)资助的课题.

摘要: 本文通过在新固相源中添加Ni2O3的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd2O3+1.2BaCuO2)+x Ni2O3、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni2O3的掺杂量x对样品的表面生长形貌、微观结构、临界温度Tc、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni2O3的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni2O3的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni2O3的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度Tc呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni3 +替代GdBCO晶体中Cu2 +所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni2O3的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni3+对Cu2 +的替代既不会造成Tc的明显下降, 但又能产生适量的Ni3 +/Cu2+ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.

English Abstract

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