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The pressure-dependent electronic structure and physical properties of γ- Si3N4 have been calculated by means of plane wave pseudo-potential method (PWP) using GGA-PW91. Based on the calculations, we analyzed the influence of pressure on the optical and mechanical properties γ-Si3N4, which indicates that γ-Si3N4 is quite suitable for applications under high pressure.
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Keywords:
- γ-Si3N4 /
- optical property /
- mechanical property /
- high pressure
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