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利用等离子体增强化学气相沉积法制备Si-rich SiNx/N-rich SiNy多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiNx子层内形成,其尺寸可由Si-rich SiNx子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiNx/N-rich SiNy多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上.SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.
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Keywords:
- silicon nitride /
- multilayer /
- constrained crystallization /
- Si nanocrystals
[1] Wang M, Li D, Yuan Z, Yang D, Que D 2007 Appl. Phys. Lett. 90 131903
[2] Hao H L, Wu L K, Shen W Z 2007 Appl. Phys. Lett. 92 121922
[3] Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[4] Liu Y, Chen K, Qiao F, Huang X, Han P, Qian B, Ma Z, Li W, Xu J, Chen K 2006 Acta Phys. Sin. 55 5403 (in Chinese)[刘艳松、 陈 铠、 乔 峰、 黄信凡、 韩培高、 钱 波、 马忠元、 李 伟、 徐 骏、 陈坤基 2006 物理学报 55 5403]
[5] Zacharias M, Blasing J, Veit P, Tsybeskov L, Hirschman K, Fauchet P M, 1999 Appl. Phys. Letts. 74 2614
[6] Qin G G, Chen Y, Ran G Z, Zhang B R, Wang S H, Qin G, Ma Z C, Zong W H, Ren S F 2001 J. Phys.:Condens. Matter 13 11751
[7] Huang R, Chen K J, Dong H P, Wang D Q, Ding H L, Li W, Xu J, Ma Z Y, Xu L 2007 Appl. Phys. Lett. 91 111104
[8] Kamei T, Stradins P, Mastsuda A, 1999 Appl. Phys. Lett. 74 1707
[9] Zi J, Buscher H, Falter C, Ludwig W, Zhang K, Xie X 1996 Appl. Phys. Lett. 69 200
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[1] Wang M, Li D, Yuan Z, Yang D, Que D 2007 Appl. Phys. Lett. 90 131903
[2] Hao H L, Wu L K, Shen W Z 2007 Appl. Phys. Lett. 92 121922
[3] Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[4] Liu Y, Chen K, Qiao F, Huang X, Han P, Qian B, Ma Z, Li W, Xu J, Chen K 2006 Acta Phys. Sin. 55 5403 (in Chinese)[刘艳松、 陈 铠、 乔 峰、 黄信凡、 韩培高、 钱 波、 马忠元、 李 伟、 徐 骏、 陈坤基 2006 物理学报 55 5403]
[5] Zacharias M, Blasing J, Veit P, Tsybeskov L, Hirschman K, Fauchet P M, 1999 Appl. Phys. Letts. 74 2614
[6] Qin G G, Chen Y, Ran G Z, Zhang B R, Wang S H, Qin G, Ma Z C, Zong W H, Ren S F 2001 J. Phys.:Condens. Matter 13 11751
[7] Huang R, Chen K J, Dong H P, Wang D Q, Ding H L, Li W, Xu J, Ma Z Y, Xu L 2007 Appl. Phys. Lett. 91 111104
[8] Kamei T, Stradins P, Mastsuda A, 1999 Appl. Phys. Lett. 74 1707
[9] Zi J, Buscher H, Falter C, Ludwig W, Zhang K, Xie X 1996 Appl. Phys. Lett. 69 200
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