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利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm2时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm2,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移.
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关键词:
- ZnO纳米棒 /
- 场发射 /
- 水热法 /
- 有机/无机复合电致发光
The ZnO nanorods, primarily aligned perpendicular to the substrate, have been fabricated by hydrothermal decomposition. The scanning electron microscopy and photoluminescence method were used to characterize their morphology and optical properties, respectively. The field emission properties were also studied. The results indicate that the ZnO nanorods present good morphology, structure and good field emission property. The on-set field is 2.8 V/μm at a current density of 1 μA/cm2. The emission current density can reach 0.67 mA/cm2 at 6.4 V/μm. The field emission enhancement factor is 3660. Fluctuation of the current density is less than 25% at 4.5 V/μm for 5 hours. In the organic/inorganic electroluminescence heterostructure, with the ZnO nanorods as the electron transport layer and the m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) as the hole transport layer, the ultra-violet emission of ZnO nanorods was obtained with a 40 nm blue-shift compared with the photoluminescence of the ZnO nanorods.-
Keywords:
- ZnO nanorods /
- field emission /
- hydrothermal decomposition /
- organic/inorganic electroluminescence heterostructure
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[1] Wang Z L 2009 Mat.Sci. Eng. R 64 33
[2] Chang Y L, Zhang Q F, Sun H, Wu J L 2007 Acta Phys. Sin. 56 2399(in Chinese)[常艳玲、 张琦锋、 孙 晖、 吴锦雷 2007 物理学报 56 2399]
[3] Willander M, Nur O, Zhao Q X, Yang L L, Lorenz M, Cao B Q, Pérez Zúniga J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Mofor Che A, Postels B, Waag A, Boukos N, Travlos A, Kwack H S, Guinard J, Dang Si Le D 2009 Nanotechnology 20 332001
[4] Wang J X, Sun X W, Wei A, Lei Y, Cai X P, Li C M, Dong Z L 2006 Appl. Phys. Lett. 88 233106
[5] Lee Y J, Lloyd T M, Olson C D, Grubbs K R, Lu P, Davis J R, Voigt A J, Hsu P W J 2009 J. Phys. Chem. C 113 15778
[6] Zhang Q F, Rong Y, Chen X X, Zhang G M, Zhang Z X, Xue Z Q, Zhang C Q, Wu J L 2006 Chinese Journal of Semiconductors 27 1225 (in Chinese) [张琦锋、 戎 懿、 陈贤祥、 张耿民、 张兆祥、 薛增泉、 陈长琦、 吴锦雷 2006 半导体学报 27 1225]
[7] Chang M, Cao X L, Zeng H B 2009 J. Phys. Chem. C 113 15544
[8] Wu X, Cai W, Qu F Y 2009 Acta Phys. Sin. 58 8044(in Chinese)[武 祥、 蔡 伟、 曲凤玉2009物理学报 58 8044]
[9] Wang C, Wang F F, Fu X Q, Wang T H 2007 Chin. Phys. B16 3545
[10] Jeong SH, Hwang HY, Lee KH, Jeong Y 2001 Appl. Phys. Lett. 78 2052
[11] Li C, Yang Y, Sun X W, Lei W, Zhang X B, Wang B P, Wang J X, Tay B K, Ye J D, Lo G Q, Kwong D L 2007 Nanotechnology 18 135604
[12] Hsieh YP, Chen H Y, Lin M Z, Shiu S C, Hofmann M, Chern M Y, Jia X, Yang Y J, Chang H J, Huang H M, Tseng S C, Chen L C, Chen K H, Lin C F, Liang C T, Chen Y F 2009 Nano Lett. 9 1839
[13] Li X, Zhai F F, Liu Y, Cao M S, Wang F C, Zhang X X 2007 Chin. Phys. 16 2769
[14] Wang Y X, zhang Q F, Sun H, Chang Y L, Wu J L 2008 Acta Phys. Sin. 57 1141 (in Chinese) [王艳新、 张琦锋、 孙 晖、 常艳玲、 吴锦雷 2008物理学报 57 1141]
[15] Sun X W, Huang J Z, Wang J X, Xu Z 2008 Nano Lett. 8 1219
[16] Chang C C, Chang C S 2005 Solid State Commun. 135 765
[17] Lee C J, Lee T J, Lyu S C, Zhang Y, Ruh H, Lee H J 2002 Appl. Phys. Lett. 81 3648
[18] Suh J S, Jeong K S, Lee J S, Han I 2002 Appl. Phys. Let. 80 2392
[19] Wei A, Sun X W, Xu C X, Dong Z L, Yu M B, Huang W 2006 Appl. Phys. Lett. 88 213102
[20] Cheng J P, Guo R Y, Wang Q M 2004 Appl. Phys. Lett. 85 5140
[21] Yang Y H, Wang C X, Wang B, Xu N S, Yang G W 2005 Chem. Phys. Lett. 403 248
[22] Lu J G, Fujita S, Kawaharamura T, Nishinaka H, Kamada Y, Ohshima T, Ye Z Z, Zeng Y J, Zhang Y Z, Zhu L P, He H P, Zhao B H 2007 J. Appl. Phys. 101 083705
[23] Nadarajah A, Word R C, Meiss J, Knenkamp R 2008 Nano Lett. 8 534
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