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It is very important to consider the distribution of range, range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. Er ions with energy of 400 keV were implanted in 6H-SiC crystal samples under the angles of 0°, 45° and 60°, respectively. The lateral spread of Er ions with dose of 5×1015 cm-2 at energy of 400 keV implanted in 6H-SiC crystal were measured by Rutherford backscattering technique. The measured lateral spread is compared with TRIM98 and SRIM2006 codes prediction. It is seen that the experimental lateral spread well justifies the theoretical values. The value from TRIM98 agrees somewhat better to the experimental data than the value obtained based on SRIM2006.
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Keywords:
- ion implantation /
- 6H-SiC /
- Rutherford backscattering technique /
- lateral spread
[1] Derycke V, Soukiassian P G, Amy F, Chabal Y J, D'Angelo M D, Enriquez H B, Silly M G 2003 Nat. Mater. 2 253
[2] Katsumata H, Uekusa S, Sai H 1996 J. Appl. Phys. 80 2383
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[5] Rittenhous T L, Bohn P W, Hossain T K, Adesida I, Lindesay J, Marcus A 2004 J. Appl. Phys. 95 490
[6] Lin H F, Xie E Q, Ma Z W, Zhang J, Peng A H, He D Y 2004 Acta Phys. Sin. 53 2780 (in Chinese) [林洪峰、 谢二庆、 马紫微、 张 军、 彭爱华、 贺德衍 2004 物理学报 53 2780]
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[8] Kozanecki A, Jeynes C, Sealy B J, Nejim A 1998 Nucl. Instrum. Meth. B 136-138 1272
[9] Yan H, Chen G H, Wong S P, Kwok R W M 1998 Acta Phys. Sin. 47 876 (in Chinese) [严 辉、 陈光华、 黄世平、 郭伟民 1998 物理学报 47 876]
[10] Yang Y T, Han R, Wang P 2008 Chin. Phys. B 17 3459
[11] Dontas I, Kennou S 2001 Diam. Relat. Mater. 10 13
[12] Jia R X, Zhang Y M, Zhang Y M, Guo H, Luan S Z 2008 Acta
[13] Kozanecki A, Jeynes C, Barradas N P 1999 Nucl. Instrum. Meth. B 148 512
[14] Wang Y X, Wen J, Tang Y Q, Guo Z, Tang H G, Wu J X 1998 Chin. Phys. 7 589
[15] Awahara K, Uekusa S, Goto T 1999 Nucl. Instrum. Meth. B 148 507
[16] Jin H, Bu F L, Wang R, Li L H, Yang W Y, Zhang L G, An L N 2009 Acta Phys. Sin. 58 2594 (in Chinese) [金 华、卜凡亮、 王 蓉、 李丽华、 杨为佑、 张立功、 安立楠 2009 物 〖16] Kozanecki A, Glukhanyuk V, Jantsch W 2003 Mat. Sci. Eng. B 105 169
[17] Furukawa S, Matsumura H 1973 Appl. Phys. Lett. 22 97
[18] Wang K M, Shi B R, Wang Z L, Zhao Q T, Liu X D, Liu J T 1991 Chinese Phys. Lett. 8 244
[19] Morvan E, Mestres, Pascual J, Flores D, Vellvehi M, Rebollo J 1999 Mat. Sci. Eng. B 61-62 373
[20] Chu W K, Mayer J W, Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) chap 5, p137—141
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[1] Derycke V, Soukiassian P G, Amy F, Chabal Y J, D'Angelo M D, Enriquez H B, Silly M G 2003 Nat. Mater. 2 253
[2] Katsumata H, Uekusa S, Sai H 1996 J. Appl. Phys. 80 2383
[3] Phys. Sin. 57 4456 (in Chinese) [贾仁需、 张义门、 张玉明、 郭 辉、 栾苏珍 2008 物理学报 57 4456]
[4] Gao X, Sun G S, Li J M, Zhang Y X, Wang L, Zhao W S, Zeng Y P 2005 Chin. Phys. 14 599
[5] Rittenhous T L, Bohn P W, Hossain T K, Adesida I, Lindesay J, Marcus A 2004 J. Appl. Phys. 95 490
[6] Lin H F, Xie E Q, Ma Z W, Zhang J, Peng A H, He D Y 2004 Acta Phys. Sin. 53 2780 (in Chinese) [林洪峰、 谢二庆、 马紫微、 张 军、 彭爱华、 贺德衍 2004 物理学报 53 2780]
[7] Li B, Chen Z M, Lin T, Pu H B, Li Q M, Li J 2007 Chin. Phys. 16 3470
[8] Kozanecki A, Jeynes C, Sealy B J, Nejim A 1998 Nucl. Instrum. Meth. B 136-138 1272
[9] Yan H, Chen G H, Wong S P, Kwok R W M 1998 Acta Phys. Sin. 47 876 (in Chinese) [严 辉、 陈光华、 黄世平、 郭伟民 1998 物理学报 47 876]
[10] Yang Y T, Han R, Wang P 2008 Chin. Phys. B 17 3459
[11] Dontas I, Kennou S 2001 Diam. Relat. Mater. 10 13
[12] Jia R X, Zhang Y M, Zhang Y M, Guo H, Luan S Z 2008 Acta
[13] Kozanecki A, Jeynes C, Barradas N P 1999 Nucl. Instrum. Meth. B 148 512
[14] Wang Y X, Wen J, Tang Y Q, Guo Z, Tang H G, Wu J X 1998 Chin. Phys. 7 589
[15] Awahara K, Uekusa S, Goto T 1999 Nucl. Instrum. Meth. B 148 507
[16] Jin H, Bu F L, Wang R, Li L H, Yang W Y, Zhang L G, An L N 2009 Acta Phys. Sin. 58 2594 (in Chinese) [金 华、卜凡亮、 王 蓉、 李丽华、 杨为佑、 张立功、 安立楠 2009 物 〖16] Kozanecki A, Glukhanyuk V, Jantsch W 2003 Mat. Sci. Eng. B 105 169
[17] Furukawa S, Matsumura H 1973 Appl. Phys. Lett. 22 97
[18] Wang K M, Shi B R, Wang Z L, Zhao Q T, Liu X D, Liu J T 1991 Chinese Phys. Lett. 8 244
[19] Morvan E, Mestres, Pascual J, Flores D, Vellvehi M, Rebollo J 1999 Mat. Sci. Eng. B 61-62 373
[20] Chu W K, Mayer J W, Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) chap 5, p137—141
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