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Cu(In, Ga)Se2 薄膜在共蒸发"三步法"中的相变过程

刘芳芳 张力 何青

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Cu(In, Ga)Se2 薄膜在共蒸发"三步法"中的相变过程

刘芳芳, 张力, 何青

The phase transformation of Cu(In,Ga)Se2 film prepared by three-stage process of co-evaporation

Liu Fang-Fang, Zhang Li, He Qing
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  • CIGS薄膜的结晶相是制备高质量薄膜的关键问题. 本文采用共蒸发"三步法"工艺沉积Gu(In, Ga)Se2 (CIGS) 薄膜, 通过X射线衍射仪 (XRD) 和X射线荧光光谱仪 (XRF)、扫描电镜 (SEM) 结合的方法详细研究了"三步法"工艺的相变过程, 并制备出转换效率超过15% 的 CIGS 薄膜太阳电池.
    The Cu(In, Ga)Se2 (CIGS) phase transformation during the "three-stage" evaporation is the key problem for obtaining high-quality absorber. Cu(In, Ga)Se2 (CIGS) thin film has been prepared via co-evaporation "three-stage process". The phase transformation was studied by means of XRD, XRF (X-ray fluoroscopy) and SEM. And the efficiency above 15% of CIGS film solar cell was obtained succossfully.
    • 基金项目: 国家自然科学基金 (批准号: 61144002) 资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61144002).
    [1]

    Philip J, Dimitrios H, Erwin L, Stefan P, Roland W, Richard M, Wittraud W, Michael P 2011 Progress in Photovoltaics: Research and Applications 19 7

    [2]

    Gabor A M, Tuttle J R, Albin D S, Contreras M A, Noufi R, Hermann A M 1994 Appl. Phys. Lett. 65 2

    [3]

    Zhang L, He Q, Xu C M, Xue Y M, Li C J, Sun Y T 2008 Chin. Phys. B 17 3138

    [4]

    Liu F F, He Q, L F Y, Ao J P, Sun Y 2005 Chin. J. Semiconductors 26 10 (in Chinese) [刘芳芳, 何青, 李凤岩, 敖建平, 孙云 2005 半导体学报 26 10]

    [5]

    Pan H P, Bo L K, Huang T W, Zhang Y, Yu T, Yao S D 2012 Acta Phys. Sin. 61 22801 (in Chinese) [潘惠平, 薄连坤, 黄太武, 张毅, 于涛, 姚淑德 2012 物理学报 61 22801]

    [6]

    Contreras M A, Egaas B, King D, Swartzlander A, Dullweber T 2000 Thin Solid Films 361-362 21

    [7]

    Guillemoles J F, Curie M, Kronik L, Cahen D, Rau U,Jasenek A, Schock H W 2000 Thin Solid Films 104 20

    [8]

    Boehnke U C, Kuhn G 1987 Journal of Materials Science 22 5

    [9]

    Nishiwaki S, Satoh T, Hayashi S, Hashimoto Y, Negami T, Wada T 1999 J. Mater. Res. 14 12

    [10]

    Klenk R, Walter T, Schock H W, Cahen D 1993 Adv. Mater. 5 2

    [11]

    Tuttle J R, Contreras M A, Tennant A, Albin D, Noufi R 1993 23th IEEE Photovoltaic Specialists Conference New York, May, 1993 P415-421

  • [1]

    Philip J, Dimitrios H, Erwin L, Stefan P, Roland W, Richard M, Wittraud W, Michael P 2011 Progress in Photovoltaics: Research and Applications 19 7

    [2]

    Gabor A M, Tuttle J R, Albin D S, Contreras M A, Noufi R, Hermann A M 1994 Appl. Phys. Lett. 65 2

    [3]

    Zhang L, He Q, Xu C M, Xue Y M, Li C J, Sun Y T 2008 Chin. Phys. B 17 3138

    [4]

    Liu F F, He Q, L F Y, Ao J P, Sun Y 2005 Chin. J. Semiconductors 26 10 (in Chinese) [刘芳芳, 何青, 李凤岩, 敖建平, 孙云 2005 半导体学报 26 10]

    [5]

    Pan H P, Bo L K, Huang T W, Zhang Y, Yu T, Yao S D 2012 Acta Phys. Sin. 61 22801 (in Chinese) [潘惠平, 薄连坤, 黄太武, 张毅, 于涛, 姚淑德 2012 物理学报 61 22801]

    [6]

    Contreras M A, Egaas B, King D, Swartzlander A, Dullweber T 2000 Thin Solid Films 361-362 21

    [7]

    Guillemoles J F, Curie M, Kronik L, Cahen D, Rau U,Jasenek A, Schock H W 2000 Thin Solid Films 104 20

    [8]

    Boehnke U C, Kuhn G 1987 Journal of Materials Science 22 5

    [9]

    Nishiwaki S, Satoh T, Hayashi S, Hashimoto Y, Negami T, Wada T 1999 J. Mater. Res. 14 12

    [10]

    Klenk R, Walter T, Schock H W, Cahen D 1993 Adv. Mater. 5 2

    [11]

    Tuttle J R, Contreras M A, Tennant A, Albin D, Noufi R 1993 23th IEEE Photovoltaic Specialists Conference New York, May, 1993 P415-421

计量
  • 文章访问数:  5672
  • PDF下载量:  1661
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-06-04
  • 修回日期:  2012-12-09
  • 刊出日期:  2013-04-05

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