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强磁场对不同厚度Fe80Ni20薄膜的微观结构及磁性能的影响

曹永泽 李国建 王强 马永会 王慧敏 赫冀成

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强磁场对不同厚度Fe80Ni20薄膜的微观结构及磁性能的影响

曹永泽, 李国建, 王强, 马永会, 王慧敏, 赫冀成

Effects of high magnetic field on the microstructure and magnetic properties of Fe80Ni20 thin films with different thickness values

Cao Yong-Ze, Li Guo-Jian, Wang Qiang, Ma Yong-Hui, Wang Hui-Min, He Ji-Cheng
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  • 有无6 T强磁场条件下利用分子束气相沉积方法制备了不同厚度的Fe80Ni20薄膜. 研究发现, 薄膜的面内矫顽力随厚度增加而降低且符合Neel理论; 矩形比随厚度的增加先快速增大后缓慢降低; 6 T磁场抑制了颗粒团聚及异常长大, 并降低了薄膜表面的粗糙度, 这使薄膜的矫顽力要小于无磁场作用的薄膜, 矩形比大于无磁场作用的薄膜; 而且薄膜在垂直于基片表面的6 T磁场作用下由0 T下的面内磁各向异性转变为磁各向同性.
    Fe80Ni20 thin films with different thickness values are prepared by the molecular beam vapor deposition technique, respectively, in the cases with applying no magnetic field and with applying a 6 T magnetic field perpendicular to the surface of substrates. Film property studies show that as film thickness value increases, the coercive force in-plane decreases, which is in accordance with Neel theory, and that the squareness ratio first quickly increases, and then slowly decreases. The 6 T magnetic field restrains coalescence and abnormal growth of grains, and reduces surface roughness. Therefore, with 6 T magnetic field applied during the film preparation, the coercive force of thin film is less and the squareness ratio is larger than that with no magnetic field applied. The thin films are anisotropic in-plane with applying no magnetic field, but isotropic with applying a 6 T magnetic field.
    • 基金项目: 国家自然科学基金(批准号: 51101034, 51061130557, 51101032)和中央高校基本科研业务费专项资金 (批准号: N120509001, N120609001)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51101034, 51061130557, 51101032) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. N120509001, N120609001).
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    Szmaja W, Balcerski J, Koztowski W, Cichomski M, Grobelny J, Smolny M, Kowalczyk P J 2012 J. Alloys Compd. 521 174

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    Koza J A, Karnbach F, Uhlemann M, McCord J, Mickel C, Gebert A, Baunack S, Schultz L 2010 Electrochim. Acta 55 819

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    Nilsen O, Lie M, Foss S, Fjellvag H, Kjekshus A 2004 Appl. Surf. Sci. 227 40

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    Wang Q, Liu Y, Liu T, Gao P F, Wang K 2012 Appl. Phys. Lett. 101 132406

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    Wang Q, Cao Y Z, Li G J, Wang K, Du J J, He J C 2013 Sci. Adv. Mater. 5 447

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    Lloyd J C, Smith R S 1959 J. Appl. Phys. 30 274S

  • [1]

    Loloee R, Crimp M A 2002 J. Appl. Phys. 92 4541

    [2]

    Romera M, Ranchal R, Ciudad D, Maicas M, Aroca C 2011 J. Appl. Phys. 110 083910

    [3]

    Szmaja W, Balcerski J, Koztowski W, Cichomski M, Grobelny J, Smolny M, Kowalczyk P J 2012 J. Alloys Compd. 521 174

    [4]

    Anjum S, Rafique M S, Khaleeq-ur-Rahaman M, Siraj K, Usman A, Ahsan A, Naseem S, Khan K 2011 J. Cryst. Growth 324 142

    [5]

    Matsushima H, Nohira T, Ito Y 2004 Electrochem. Solid-State Lett. 7 C81

    [6]

    Koza J A, Karnbach F, Uhlemann M, McCord J, Mickel C, Gebert A, Baunack S, Schultz L 2010 Electrochim. Acta 55 819

    [7]

    Nilsen O, Lie M, Foss S, Fjellvag H, Kjekshus A 2004 Appl. Surf. Sci. 227 40

    [8]

    Wang H Y, Mitani S, Motokawa M, Fujimori H 2003 J. Appl. Phys. 93 9145

    [9]

    Zhang L R, Lu H, Liu X, Bai J M, Wei F L 2012 Chin. Phys. B 21 037502

    [10]

    Cao X W 1996 Physics 25 552 (in Chinese) [曹效文 1996 物理 25 552]

    [11]

    Zhang Y H 2009 Physics 38 320 (in Chinese) [张裕恒 2009 物理 38 320]

    [12]

    Wang C J, Wang Q, Wang Y Q, Huang J, He J C 2006 Acta Phys. Sin. 55 648 (in Chinese) [王春江, 王强, 王亚勤, 黄剑, 赫冀成 2006 物理学报 55 648]

    [13]

    Hu F X, Shen B G, Sun J R 2013 Chin. Phys. B 22 037505

    [14]

    Sung M G, Sassa K, Tagawa T, Miyata T, Ogawa H, Doyama M, Yamada S, Asai S 2002 Carbon 40 2013

    [15]

    Garmestani H, Al-Haik M S, Dahmen K, Tannenbaum R, Li D S, Sablin S S, Hussaini M Y 2003 Adv. Mater. 15 1918

    [16]

    Sheikh-Ali A D, Molodov D A, Garmestani H 2003 Appl. Phys. Lett. 82 3005

    [17]

    Li X, Fautrelle Y, Ren Z M 2007 Acta Mater. 55 1377

    [18]

    Ando T, Hirota N, Wada H 2009 Sci. Technol. Adv. Mater. 10 014609

    [19]

    Wang Q, Liu Y, Liu T, Gao P F, Wang K 2012 Appl. Phys. Lett. 101 132406

    [20]

    Wang Q, Lou C S, Liu T, Wei N, Wang C J, He J C 2009 J. Phys. D: Appl. Phys. 42 025001

    [21]

    Zhao A K, Ren Z M, Ren S Y, Cao G H, Ren W L 2009 Acta Phys. Sin. 58 7101 (in Chinese) [赵安昆, 任忠鸣, 任树洋, 操光辉, 任维丽 2009 物理学报 58 7101]

    [22]

    Wang Q, Cao Y Z, Li G J, Wang K, Du J J, He J C 2013 Sci. Adv. Mater. 5 447

    [23]

    Cao Y Z, Wang Q, Li G J, Du J J, Wu C, He J C 2013 J. Magn. Magn. Mater. 332 38

    [24]

    Neel L 1956 J. Phys. Radium 17 250

    [25]

    Qin X Y, Lee J S, Kim J G 1999 J. Appl. Phys. 86 2146

    [26]

    Tabakovic I, Inturi V, Riemer S 2002 J. Electrochem. Soc. 149 C18

    [27]

    Tabakovic I, Riemer S, Vas’ko V, Sapozhnikov V, Kief M 2003 J. Electrochem. Soc. 150 C635

    [28]

    Lloyd J C, Smith R S 1959 J. Appl. Phys. 30 274S

计量
  • 文章访问数:  2586
  • PDF下载量:  675
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-06-18
  • 修回日期:  2013-08-30
  • 刊出日期:  2013-11-05

强磁场对不同厚度Fe80Ni20薄膜的微观结构及磁性能的影响

  • 1. 东北大学, 材料电磁过程研究教育部重点实验室, 沈阳 110819
    基金项目: 国家自然科学基金(批准号: 51101034, 51061130557, 51101032)和中央高校基本科研业务费专项资金 (批准号: N120509001, N120609001)资助的课题.

摘要: 有无6 T强磁场条件下利用分子束气相沉积方法制备了不同厚度的Fe80Ni20薄膜. 研究发现, 薄膜的面内矫顽力随厚度增加而降低且符合Neel理论; 矩形比随厚度的增加先快速增大后缓慢降低; 6 T磁场抑制了颗粒团聚及异常长大, 并降低了薄膜表面的粗糙度, 这使薄膜的矫顽力要小于无磁场作用的薄膜, 矩形比大于无磁场作用的薄膜; 而且薄膜在垂直于基片表面的6 T磁场作用下由0 T下的面内磁各向异性转变为磁各向同性.

English Abstract

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