第三代半导体材料及器件中的热科学和工程问题

程哲

doi:10.7498/aps.70.20211662

摘要

简单回顾了半导体材料的发展历史, 并以基于氮化镓的高电子迁移率晶体管为例, 介绍了第三代半导体器件的产热机制和热管理策略. 以β相氧化镓为例, 简单讨论了新兴的超宽禁带半导体的发展和热管理挑战. 然后重点讨论了一些界面键合技术用于半导体散热的进展, 同时指出这些器件中大量存在的界面散热的工程难题背后的科学问题: 界面传热的物理理解. 在回顾了之前界面传热的理论发展后, 指出了理解界面传热当前遇到的一些困难、机遇和方向.

关键词:

第三代半导体 /
热管理 /
界面

Abstract

The history of semiconductor materials is briefly reviewed in this work. By taking GaN-based high electron mobility transistor as an example, the heat generation mechanisms and thermal management strategies of wide bandgap semiconductor devices are discussed. Moreover, by taking β-Ga₂O₃ as an example, the thermal management challenges of emerging ultrawide bandgap semiconductors are briefly discussed. The following discussions focus on the interfacial thermal transport which widely exists in the semiconductor devices mentioned above. The recent advancements in room-temperature wafer bonding for thermal management applications are summarized. Furthermore, some open questions about the physical understanding of interfacial thermal transport are also mentioned. Finally, the theoretical models for calculating thermal boundary conductance are reviewed and the challenges and opportunities are pointed out.

Keywords:

作者及机构信息

程哲

伊利诺伊大学厄巴纳-香槟分校材料科学和工程系, 伊利诺伊　61801

通信作者: 程哲, zcheng18@illinois.edu

Authors and contacts

Cheng Zhe

Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Illinois 61801, USA

Corresponding author: Cheng Zhe, zcheng18@illinois.edu

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 基于氮化镓的高电子迁移率晶体管的示意图和节点附近的电场分布. 热点位于栅极附近

Fig. 1. The schematic diagram of a GaN high electron mobility transistors (HEMT) and the electric field distribution across the channel. The hotspot is located close to the gate.

下载: 全尺寸图片幻灯片

[1]	Cheng Z, Bougher T, Bai T, Wang S Y, Li C, Yates L, Foley B M, Goorsky M, Cola B A, Faili F, Graham S 2018 ACS Appl. Mater. & Interf. 10 4808
[2]	Anaya J, Rossi S, Alomari M, Kohn E, Toth L, Pecz B, Hobart K D, Anderson T J, Feygelson T I, Pate B B, Kuball M 2016 Acta Mater. 103 141 Google Scholar
[3]	Yates L, Anderson J, Gu X, Lee C, Bai T, Mecklenburg M, Aoki T, Goorsky M S, Kuball M, Piner E L, Graham S 2018 ACS Appl. Mater. & Interf. 10 24302
[4]	Reese S B, Remo T, Green J, Zakutayev A 2019 Joule 3 903 Google Scholar
[5]	Jiang P, Qian X, Li X, Yang R 2018 Appl. Phys. Lett. 113 232105 Google Scholar
[6]	Cheng Z, Yates L, Shi J, Tadjer M J, Hobart K D, Graham S 2019 APL Mater. 7 031118 Google Scholar
[7]	Cheng Z, Wheeler V D, Bai T, Shi J, Tadjer M J, Feygelson T, Hobart K D, Goorsky M S, Graham S 2020 Appl. Phys. Lett. 116 062105 Google Scholar
[8]	Mu F, Cheng Z, Shi J, Shin S, Xu B, Shiomi J, Graham S, Suga T 2019 ACS Appl. Mater. & Interf. 11 33428
[9]	Cheng Z, Mu F, Yates L, Suga T, Graham S 2020 ACS Appl. Mater. & Interf. 12 8376
[10]	Kang JS, Li M, Wu H, Nguyen H, Aoki T, Hu Y 2021 Nat. Electron. 17 1
[11]	Cheng Z, Mu F, You T, Xu W, Shi J, Liao M E, Wang Y, Huynh K, Suga T, Goorsky M S, Ou X, Graham S 2020 ACS Appl. Mater. & Interf. 12 44943
[12]	Cheng Z, Mu F, Ji X, You T, Xu W, Suga T, Ou X, Cahill D G, Graham S 2021 ACS Appl. Mater. & Interf. 13 31843
[13]	Cheng Z, Shi J, Yuan C, Kim S, Graham S 2021 Semiconduc. and Semimetals (Elsevier) 107 77
[14]	Dai J, Tian Z 2020 Phys. Rev. B. 101 041301 Google Scholar
[15]	Gaskins J T, Kotsonis G, Giri A, Ju S, Rohskopf A, Wang Y, Bai T, Sachet E, Shelton C T, Liu Z, Cheng Z, Foley B, Graham S, Luo T, Henry A, Goorsky M S, Shiomi J, Maria J P, Hopkins P E 2018 Nano Lett. 18 7469 Google Scholar
[16]	Zhang Y, Ma D, Zang Y, Wang X, Yang N 2018 Front. in Energ. Res. 6 48 Google Scholar
[17]	Deng C, Huang Y, An M, Yang N 2020 Mater. Today Phys. 16 100305
[18]	Dames C, Chen G 2004 J. of Appl. Phys. 95 682 Google Scholar
[19]	Prasher R S, Phelan P E 2001 J. Heat Transf. 123 105 Google Scholar
[20]	Hopkins P E, Duda J C, Norris P M 2011 J. Heat Transf. 133 062401 Google Scholar
[21]	Chalopin Y, Volz S 2013 Appl. Phys. Lett. 103 051602 Google Scholar
[22]	Gordiz K, Henry A 2016 Sci. Rep. 6 23139 Google Scholar
[23]	Cheng Z, Li R, Yan X, Jernigan G, Shi J, Liao M E, Hines N J, Gadre C A, Idrobo J C, Lee E, Hobart K D, Goorsky M S, Pan X, Luo T, Graham S 2021 Nat. Commun. 12 6901
[24]	Murakami T, Hori T, Shiga T, Shiomi J 2014 Appl. Phys. Exp. 7 121801 Google Scholar
[25]	Yang N, Luo T, Esfarjani K, Henry A, Tian Z, Shiomi J, Chalopin Y, Li B, Chen G 2015 J. of Comput. and Theoret. Nanosci. 12 168 Google Scholar
[26]	Muraleedharan M G, Gordiz K, Rohskopf A, Wyant S T, Cheng Z, Graham S, Henry A 2020 arXiv: 2011.01070
[27]	Cheng Z, Koh Y R, Ahmad H, Hu R, Shi J, Liao M E, Wang Y, Bai T, Li R, Lee E, Clinton E A, Matthews M C, Engel Z, Yates L, Luo T, Goorsky M S, Doolittle W A, Tian Z, Hopkins P E, Graham S 2020 Commun. Phys. 3 1 Google Scholar
[28]	Xu D, Hanus R, Xiao Y, Wang S, Snyder G J, Hao Q 2018 Mater. Today Phys. 6 53 Google Scholar
[29]	Wang S, Xu D, Gurunathan R, Snyder G J, Hao Q 2020 J. of Materiomics 6 248 Google Scholar
[30]	Hao Q, Garg J 2021 ES Mater. & Manuf. 14 36

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第三代半导体材料及器件中的热科学和工程问题