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硅漂移探测器(silicon drift detector, SDD)是一种高性能X射线探测器, 具有极其广泛的应用. SDD射线探测系统由SDD器件、前置放大器和脉冲处理系统组成, 现有的SDD脉冲处理系统存在脉冲堆积抑制性能差以及易受前级系统参数波动影响的问题, 导致探测系统性能变差. 本文提出一种SDD数字脉冲处理系统, 在该系统中, 模数转换器(analog-to-digital converter, ADC)直接采样前置放大器的输出, 并将数据传输到数字脉冲处理平台进行处理. 结合SDD器件与前置放大器的信号特性, 分析ADC采样位数与采样频率对系统性能的影响; 提出两种优化的ADC采样电路, 防止因ADC采样位数不足引起能量分辨率变差. 对数字脉冲处理系统中的脉冲成形算法进行研究, 结果表明成形信号不会因前级系统的参数变化而畸变, 证明了该数字脉冲处理系统的鲁棒性. 建立完成SDD数字脉冲处理系统, 并对系统进行测试, 验证了系统的正确性.Silicon drift detector (SDD) is a kind of high performance X-ray detector, which is widely used. The ray detection system based on SDD is composed of SDD device, preamplifier and pulse processing system. The now available pulse processing system has the problems of poor pulse pile-up rejection performance and being vulnerable to the parameter fluctuations of front-end system, which degrades the performance of detection system. A digital pulse processing system is proposed. In this system, analog-to-digital converter (ADC) directly samples the output signal of preamplifier, and transmits the data to the digital pulse processing platform for processing. According to the signal characteristics of SDD device and preamplifier, the influence of ADC sampling bits and sampling frequency on system performance is analyzed. Two optimized ADC sampling circuits are proposed to reduce energy resolution degradation induced by insufficient ADC sampling bits. The pulse shaping algorithm in the digital pulse processing system is studied. The results show that the shaping signal will not be distorted due to the parameter fluctuations of the front-end system, which proves the robustness of the digital pulse processing system. The digital pulse processing system is implemented and tested, and the correctness of the system is verified.
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Keywords:
- silicon drift detector /
- digital pulse processing /
- preamplifier /
- analog-to-digital converter /
- pulse shaping
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图 10 用信号发生器测试数字脉冲处理系统
Fig. 10. Test digital pulse processing system with a signal generator
表 1 前置放大器反馈电容与转换增益
Table 1. The feedback capacitors and conversion gains of preamplifiers
序号 反馈电容/fF 转换增益/(mV·keV-1) 1 ≈ 125 ≈ 0.35 2 ≈ 50 ≈ 0.88 3 ≈ 25 ≈ 1.76 
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表 2 串联和并联噪声参数设置
Table 2. Serial and parallel noise parameter settings
参数 $\sigma_{{\rm{s}}}/A_{{\rm{mp}}}$ $ \sigma_{ {\rm{p} }}/\sigma_{ {\rm{s} }} $ 备注 条件1 2.65% 2% 串联与并联白噪声强度相近 条件2 2.65% 0.5% 串联白噪声占主导作用 条件3 0.53% 2% 串联与并联白噪声强度较小
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表 3 能量分辨率影响因素与成形时间的关联
Table 3. Relations between energy resolution impact factors and shaping time
影响因素 与成形时间的关联性 法诺效应 不相关 电荷收集效率 不相关 串联白噪声 随成形时间增大而减小 闪烁噪声 不相关 并联白噪声 随成形时间增大而增大
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[1] Gatti E, Rehak P 1984 Nucl. Instrum. Meth. 225 3
[2] Zampa G, Rashevsky A, Vacchi A 2009 J. Instrum. 56 3
[3] Bombelli L, Fiorini C, Frizzi T, Alberti R, Longoni A 2011 2011 IEEE Nuclear Science Symposium Conference Record Valencia, Spain, October 23−29, 2011 p1972
[4] Bertuccio G, Ahangarianabhari M, Graziani C, Macera D, Shi Y, Rachevski A, Rashevskaya I, Vacchi A, Zampa G, Zampa N, Bellutti P, Giacomini G, Picciotto A, Piemonte C 2015 J. Instrum. 10 1
[5] Hafizh I, Carminati M, Fiorini C 2020 IEEE Trans. Nucl. Sci. 67 7
Google Scholar
[6] Ishiwatari T, Siddharta Collaboration 2007 Nucl. Instrum. Meth. A 581 1
Google Scholar
[7] De Geronimo G, Rehak P, Ackley K, Carini G, Chen W, Fried J, Keister J, Li S, Li Z, Pinelli Donald A, Siddons D P, Vernon E, Gaskin Jessica A, Ramsey Brian D, Tyson Trevor A 2010 IEEE Trans. Nucl. Sci. 57 3
Google Scholar
[8] Prigozhin G, Gendreau K, Foster R, Ricker Jr G, Villasenor J, Doty J, Kenyon S, Arzoumanian Z, Redus R, Huber A 2012 High Energy, Optical, and Infrared Detectors for Astronomy V. International Society for Optics and Photonics 845318
[9] Xu N, Sheng L, Su T, Chen C, Li Y, Zhao B, Liu C 2019 Nucl. Instrum. Meth. A 927 429
Google Scholar
[10] Barkan S, Saveliev V D, Wang Y, Feng L, Damron E V, Tomimatsu Y 2015 Bio. Chem. Res. 2015 338
[11] 谢树欣 2009 博士学位论文 (合肥: 中国科学技术大学)
Xie S X 2009 Ph. D. Dissertation (Hefei: University of Science and Technology of China) (in Chinese)
[12] 张开琪 2018 硕士学位论文 (成都: 成都理工大学)
Zhang K Q 2018 Ph. D. Dissertation (Chengdu: Chengdu University of Technology) (in Chinese)
[13] Jordanov V T 2016 Nucl. Instrum. Meth. A 805 63
Google Scholar
[14] Chen E F, Feng C Q, Liu S B, Ye C F, Jin D D, Lian J, Hu H J 2017 Nucl. Sci. Tech. 28 1
Google Scholar
[15] Grzywacz R 2003 Nucl. Instrum. Meth. B 204 649
Google Scholar
[16] Wengang S, Lijun Z, Guanying W 2020 IEEE Transactions on Nuclear Science 67 7
[17] 张怀强 2011 博士学位论文 (成都: 成都理工大学)
Zhang H Q 2011 Ph. D. Dissertation (Chengdu: Chengdu University of Technology) (in Chinese)
[18] Schlosser D M, Lechner P, Lutz G, Niculae A, Soltau H, Strüder L, Eckhardt R, Hermenau K, Schaller G, Schopper F, Jaritschin O, Liebel A, Simsek A, Fiorini C, Longoni A 2010 Nucl. Instrum. Meth. A 624 2
[19] Chen W, Kraner H, Li Z, Rehak P, Gatti E, Longoni A, Sampietro M, Holl P, Kemmer J, Faschingbauer U, Schmitt B, Worner A, Wurm J P 1992 IEEE Trans. Nucl. Sci. 39 4
Google Scholar
[20] Fiorini C, Gola A, Klatka T, Bombelli L, Frizzi T, Peloso R, Longoni A, Niculae A 2007 2007 IEEE Nuclear Science Symposium Conference Record Honolulu, Hawaii , USA, October 26−November 6, 2007 p2519
[21] Unbehauen R, Cichocki A 2012 MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems: Analysis and Design (Springer) pp1−82
[22] Menaa N, D’Agostino P, Zakrzewski B, Jordanov V T 2011 Nucl. Instrum. Meth. A 652 1
Google Scholar
[23] Mazziotta M N 2008 Nucl. Instrum. Meth. A 584 2
[24] 邓智, 刘以农, 程建平, 康克军 2006 核电子学与探测技术 26 6
Deng Z, Liu Y N, Cheng K P, Kang K J 2006 Nucl. Electron. Detect. Technol. 26 6
[25] Lakatos T 1991 Nucl. Instrum. Meth. B 62 2
[26] Warburton W K, Momayezi M, Hubbard-Nelson B, Skulski W 2000 Appl. Radiat. Isot. 53 4
[27] Imperiale C, Imperiale A 2001 Measurement 30 1
Google Scholar
[28] Huaiqiang Z, Liangquan G E, Bin T 2013 Nucl. Sci. Tech. 24 6
[29] 杨海波 2015 博士学位论文 (兰州: 中国科学院近代物理研究所)
Yang H B 2015 Ph. D. Dissertation (Lanzhou: Institute of modern physics of Chinese Academy of Sciences) (in Chinese)
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