氢终端单晶金刚石反相器特性

邢雨菲; 任泽阳; 张金风; 苏凯; 丁森川; 何琦; 张进成; 张春福; 郝跃

doi:10.7498/aps.71.20211447

摘要

超宽禁带半导体金刚石材料在高温、高压电路中具有重要的应用潜力. 本研究采用微波等离子体化学气相沉积生长的单晶金刚石衬底制备了原子层沉积(atomic layer deposition, ALD)的Al₂O₃栅介质的氢终端金刚石金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor, MOSFET)器件, 并与负载电阻互连, 成功制备了金刚石反相器. 4 μm栅长的氢终端金刚石器件实现了最大113.4 mA/mm的输出饱和漏电流, 器件开关比高达10⁹, 并在不同负载电阻条件下均成功测得金刚石反相器的电压反转特性, 反相器的最大增益为10.

关键词:

金刚石 /
场效应管 /
反相器

Abstract

Diamond has a wide band gap, high carrier mobility, and high thermal conductivity, thereby possessing great potential applications in high power, and high temperature electronics devices, and also inhigh temperature logic circuit. In this work, we fabricate a hydrogen terminated diamond metal-oxide-semiconductor field effect transistor (MOSFET) by using the atomic layer deposition grown Al₂O₃ as a gate dielectric and passivation layer. The device has a gate length and width of 4 μm and 50 μm, respectively. The device delivers a maximum output current of about 113.4 mA/mm at V_GS of –6 V and an ultra-high on/off ratio of 10⁹. In addition, we fabricate three resistors, respectively, with an interelectrode distance of 20, 80 and 160 μm, corresponding to the resistance value of 16.7, 69.5 and 136.4 kΩ, respectively. The logic inverter is realized by combining the MOSFET with the load resistance, and the characteristics of the logic inverter are demonstrated successfully, which indicates that the diamond MOSFET has great potential applications in future logic circuits.

Keywords:

作者及机构信息

1.
西安电子科技大学, 宽带隙半导体技术国防重点学科实验室, 西安　710071

2.
西安电子科技大学芜湖研究院, 芜湖　241002

通信作者: 任泽阳, zeyangren@xidian.edu.cn

基金项目: 国家磁约束核聚变能发展研究专项基金(批准号: 2019YFE03100200)、国家自然科学基金(批准号: 62127812, 62004148, 61874080)、国家科技重大专项(批准号: 2009ZYHW0015)、陕西省自然科学基础研究计划(批准号: 2020JQ-315, 2018ZDCXL-GY-01-01-02, 2019ZDLGY16-02)和中国博士后科学基金(批准号: 2021TQ0256)资助的课题.

Authors and contacts

1.
The National Key Discipline Laboratory of Wide Band Gap Semiconductor, Xidian University, Xi’an 710071, China

2.
Wuhu Research Institute, Xidian University, Wuhu 241002, China

Corresponding author: Ren Ze-Yang, zeyangren@xidian.edu.cn

Funds: Project supported by the National Special Fund for Magnetic Confinement Nuclear Fusion Energy R&D Program (Grant No. 2019YFE03100200), the National Natural Science Foundation of China (Grant Nos. 62127812, 62004148, 61874080), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZYHW0015), the Natural Science Basic Research Program of Shanxi Province, China (Grant Nos. 2020JQ-315, 2018ZDCXL-GY-01-01-02, 2019ZDLGY16-02), and the China Postdoctoral Science Foundation (Grant No. 2021TQ0256).

文章全文 : translate this paragraph

参考文献

[1]	Wort C J H, Balmer R S 2008 Mater. Today 11 22 Google Scholar
[2]	Baliga B J 1989 IEEE Electr. Device Lett. 10 455 Google Scholar
[3]	Achard J, Silva F, Tallaire A, Bonnin X, Lombardi G, Hassouni K, Gicquel A 2007 J. Phys. D:Appl. Phys. 40 6175 Google Scholar
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施引文献

图 1 实验制备器件的原理图　(a) 剖面图; (b) 俯视图

Fig. 1. Schematic diagram of the device structure: (a) Sectional view; (b) top view.

下载: 全尺寸图片幻灯片

图 2 器件负载电阻　(a) I-V特性; (b) R₁, R₂, R₃电阻阻值

Fig. 2. The load resistance of device: (a) I-V relationships; (b) resistance values for the R₁, R₂ and R₃ resistors.

下载: 全尺寸图片幻灯片

图 3 氢终端金刚石MOSFET器件输出特性

Fig. 3. Output characteristics of the hydrogen-terminated diamond (H-diamond) MOSFET.

下载: 全尺寸图片幻灯片

图 4 氢终端金刚石MOSFET器件传输特性

Fig. 4. Transfer characteristics of the H-diamond MOSFET.

下载: 全尺寸图片幻灯片

图 5 不同负载电阻的逻辑反相器的电压传输特性

Fig. 5. The voltage transfer characteristics of the logic inverter with the various load resistors.

下载: 全尺寸图片幻灯片

图 6 反相器不同负载电阻情况下增益与输入电压的关系

Fig. 6. Relationship between V_in and the gain of the inverter under different load resistances.

下载: 全尺寸图片幻灯片

图 7 (a)恒流区器件输出电压变化; (b)可变电阻区器件输出电压变化

Fig. 7. (a) Output voltage variation in saturation area; (b) output voltage variation in variable resistance area.

下载: 全尺寸图片幻灯片

表 1 不同条件沉积的Al₂O₃介质的氢终端金刚石MOSFET器件的最大输出电流密度

Table 1. Summarization of the characterization of the H-diamond MOSFETs with the different temperatures grown Al₂O₃ as gate dielectrics.

Al₂O₃ 厚度/nm	生长温度/℃	L_G/μm	L_GD/μm	电流密度 /(mA·mm^–1)	参考文献
6	80	0.1	—	585.0	[8]
20	200	2.0	2	339.0	[14]
20	300	2.0	2	85.0	[14]
25	300	2.0	2	339.0	[17]
83	450	5.0	20	12.0	[23]
200	450	20.0	10	18.2	[24]
200	450	2.0	17	120.0	[25]
200	450	6.0	6	12.0	[6]
200	450	15.0	24	5.2	[10]
400	450	2.0	17	59.0	[26]
15	300	4.0	2	113.4	本工作

下载: 导出CSV

[1]	Wort C J H, Balmer R S 2008 Mater. Today 11 22 Google Scholar
[2]	Baliga B J 1989 IEEE Electr. Device Lett. 10 455 Google Scholar
[3]	Achard J, Silva F, Tallaire A, Bonnin X, Lombardi G, Hassouni K, Gicquel A 2007 J. Phys. D:Appl. Phys. 40 6175 Google Scholar
[4]	Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2006 Diam. Relat. Mater. 15 783 Google Scholar
[5]	Hirama K, Sato H, Harada Y, Yamamoto H, Kasu M 2012 IEEE Electr. Device Lett. 33 1111 Google Scholar
[6]	Kawarada H, Tsuboi H, Naruo T, Yamada T, Xu D, Daicho A, Saito T, Hiraiwa A 2014 Appl. Phys. Lett. 105 4 Google Scholar
[7]	Liu J, Yu H, Shao S, Tu J, Zhu X, Yuan X, Wei J, Chen L, Ye H, Li C 2020 Diam. Relat. Mater. 104 107750 Google Scholar
[8]	Yu X X, Zhou J J, Qi C J, Cao Z Y, Kong Y C, Chen T S 2018 IEEE Electr. Device Lett. 39 1373 Google Scholar
[9]	Ueda K, Kasu M, Yamauchi Y, Makimoto T, Schwitters M, Twitchen D J, Scarsbrook G A, Coe S E 2006 IEEE Electr. Device Lett. 27 570 Google Scholar
[10]	Kitabayashi Y, Kudo T, Tsuboi H, Yamada T, Xu D, Shibata M, Matsumura D, Hayashi Y, Syamsul M, Inaba M, Hiraiwa A, Kawarada H 2017 IEEE Electr. Device Lett. 38 363 Google Scholar
[11]	Imanishi S, Horikawa K, Oi N, Okubo S, Kageura T, Hiraiwa A, Kawarada H 2019 IEEE Electr. Device Lett. 40 279 Google Scholar
[12]	Russell S A O, Sharabi S, Tallaire A, Moran D A J 2012 IEEE Electr. Device Lett. 33 1471 Google Scholar
[13]	Kasu M, Ueda K, Ye H, Yamauchi Y, Sasaki S, Makimoto T 2005 IEEE Electr. Device Lett. 41 1249 Google Scholar
[14]	Ren Z Y, Yuan G S, Zhang J F, Xu L, Zhang J C, Chen W J, Hao Y 2018 Aip. Adv. 8 6 Google Scholar
[15]	Daicho A, Saito T, Kurihara S, Hiraiwa A, Kawarada H 2014 J. Appl. Phys. 115 4 Google Scholar
[16]	Wang Y F, Chang X, Zhang X, Fu J, Fan S, Bu R, Zhang J, Wang W, Wang H X, Wang J 2018 Diam. Relat. Mater. 81 113 Google Scholar
[17]	Ren Z, Lv D, Xu J, Zhang J, Zhang J, Su K, Zhang C, Hao Y 2020 Appl. Phys. Lett. 116 013503 Google Scholar
[18]	Liu J W, Liao M Y, Imura M, Watanabe E, Oosato H, Koide Y 2014 Appl. Phys. Lett. 105 082110 Google Scholar
[19]	Liu J W, Oosato H, Liao M Y, Imura M, Watanabe E, Koide Y 2018 Appl. Phys. Lett. 112 153501 Google Scholar
[20]	Liu J, Ohsato H, Liao M, Imura M, Watanabe E, Koide Y 2017 IEEE Electr. Device. Lett. 38 922 Google Scholar
[21]	Wang J J, He Z Z, Yu C, Song X B, Xu P, Zhang P W, Guo H, Liu J L, Li C M, Cai S J, Feng Z H 2014 Diam. Relat. Mater. 43 43 Google Scholar
[22]	Ren Z, Zhang J, Zhang J, Zhang C, Xu S, Li Y, Hao Y 2017 IEEE Electr. Device Lett. 38 786 Google Scholar
[23]	Yamaguchi T, Umezawa H, Ohmagari S, Koizumi H, Kaneko J H 2021 Appl. Phys. Lett. 118 162105 Google Scholar
[24]	Inaba M, Muta T, Kobayashi M, Saito T, Shibata M, Matsumura D, Kudo T, Hiraiwa A, Kawarada H 2016 Appl. Phys. Lett. 109 033503 Google Scholar
[25]	Kawarada H, Yamada T, Xu D, Kitabayashi Y, Shibata M, Matsumura D, Kobayashi M, Saito T, Kudo T, Inaba M, Hiraiwa A, Ieee. 2016 Diamond MOSFETs using 2D Hole Gas with 1700 V Breakdown Voltage. (New York: Ieee) p483
[26]	Syamsul M, Kitabayashi Y, Kudo T, Matsumura D, Kawarada H 2017 IEEE Electr. Device. Lett. 38 607 Google Scholar

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