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对国产六面顶压机平台下使用多晶种法合成宝石级金刚石单晶进行了系统的研究. 通过合理调整温度梯度法的合成腔体组装, 采用多晶种法, 探索多晶种法金刚石合成的压力和温度区间, 在单个合成腔体内放置3–5颗金刚石晶种, 成功合成出多颗(3–5)优质Ib型宝石级金刚石单晶. 多颗晶种的引入, 单次实验合成的多个金刚石晶体晶形及品质一致; 同时, 晶体的整体生长速度也有明显的增大. 多晶种法金刚石单晶合成的研究, 可以有效地利用腔体空间、提高单次金刚石单晶合成的效率, 解决压机大型化下高温高压资源利用率低的问题; 同时, 为宝石级金刚石单晶商业化生产提供重要的依据.In this paper, gem diamond synthesis is systematically studied using the multiseed method in China-type cubic high-pressure apparatus. High-quality Ib diamond crystals are synthesized in a growth cell with 3-5 diamond seeds, by adjusting the growth cell assembly and investigating the pressure and temperature regions of diamond synthesis. Because of several diamond seeds embedded in a growth cell, the synthesized diamond crystals possess the same morphology and quality. At the same time, the whole growth rate increases apparently. Using the multiseed method of diamond synthesis the growth cell volume can be effectively utilized, the efficiency of diamond synthesis can be enhanced, and the problem of low utilization rate is solved. Meanwhile, those also provide an effective support for the gem diamond industrialization synthesis.
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Keywords:
- diamond /
- China-type cubic high-pressure apparatus /
- multiseed /
- temperature gradient method
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[2] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
[3] Burns R C, Hansen J O, Spits R A, Sibanda M, Melbourn C M, Welch D L 1999 Diamond Relat. Mater. 8 1433
[4] Li Z C, Jia X P, Huang G F, Hu M H, Li Y, Yan B M, Ma H A 2013 Chin. Phys. B 22 014701
[5] Tian Y, Jia X P, Zang C Y, Li R, Li S S, Xiao H Y, Zhang Y F, Huang G F, Han Q G, Ma L Q, Li Y, Chen X Z, Zhang C, Ma H A 2009 Chin. Phys. Lett. 26 028104
[6] Demina S E, Kalaev V V, Lysakovskyi V V, Serga M A, Kovalenko T V, Ivahnenko S A 2009 J. Cryst. Growth 311 680
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101
[9] Sumiya H, Harano K 2012 Diamond Relat. Mater. 24 44
[10] Palyanov Y N, Borzdov Y M, Kupriyanov I N, Khokhryakov A F 2012 Cryst. Growth Des. 12 5571
[11] Lin I C, Lin C J, Tuan W H 2011 Diamond Relat. Mater. 20 42
[12] Jia X P, Zhu P W, Wang T D, Zang C Y, Wang X C, Chen L X, Zou G T, Wakastuski W 2003 4th Zhengzhou International Superhard Materials and Related Products Conference Zhengzhou, China, August 29-September 2, 2003 p77
[13] Sung J C, Sung M, Sung E 2006 Thin Solid Films 498 212
[14] Han Q G, Ma H A, Zhou L, Zhang C, Tian Y, Jia X P 2007 Rev. Sci. Instrum. 78 113906
[15] Han Q G, Ma H A, Huang G F, Zhang C, Li Z C, Jia X P 2009 Rev. Sci. Instrum. 80 096107
[16] Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys.: Condens. Matter. 14 11269
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[1] Bundy F P, Strong H T, Wentorf R H 1955 Nature 176 51
[2] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
[3] Burns R C, Hansen J O, Spits R A, Sibanda M, Melbourn C M, Welch D L 1999 Diamond Relat. Mater. 8 1433
[4] Li Z C, Jia X P, Huang G F, Hu M H, Li Y, Yan B M, Ma H A 2013 Chin. Phys. B 22 014701
[5] Tian Y, Jia X P, Zang C Y, Li R, Li S S, Xiao H Y, Zhang Y F, Huang G F, Han Q G, Ma L Q, Li Y, Chen X Z, Zhang C, Ma H A 2009 Chin. Phys. Lett. 26 028104
[6] Demina S E, Kalaev V V, Lysakovskyi V V, Serga M A, Kovalenko T V, Ivahnenko S A 2009 J. Cryst. Growth 311 680
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101
[9] Sumiya H, Harano K 2012 Diamond Relat. Mater. 24 44
[10] Palyanov Y N, Borzdov Y M, Kupriyanov I N, Khokhryakov A F 2012 Cryst. Growth Des. 12 5571
[11] Lin I C, Lin C J, Tuan W H 2011 Diamond Relat. Mater. 20 42
[12] Jia X P, Zhu P W, Wang T D, Zang C Y, Wang X C, Chen L X, Zou G T, Wakastuski W 2003 4th Zhengzhou International Superhard Materials and Related Products Conference Zhengzhou, China, August 29-September 2, 2003 p77
[13] Sung J C, Sung M, Sung E 2006 Thin Solid Films 498 212
[14] Han Q G, Ma H A, Zhou L, Zhang C, Tian Y, Jia X P 2007 Rev. Sci. Instrum. 78 113906
[15] Han Q G, Ma H A, Huang G F, Zhang C, Li Z C, Jia X P 2009 Rev. Sci. Instrum. 80 096107
[16] Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys.: Condens. Matter. 14 11269
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