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石墨烯基复合热界面材料导热性能研究进展

安盟 孙旭辉 陈东升 杨诺

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石墨烯基复合热界面材料导热性能研究进展

安盟, 孙旭辉, 陈东升, 杨诺

Research progress of thermal transport in graphene-based thermal interfacial composite materials

An Meng, Sun Xu-Hui, Chen Dong-Sheng, Yang Nuo
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  • 随着微纳电子器件热功率密度的迅速增长, 控制其温度已成为电子信息产业发展和应用的迫切需求. 研发高性能热界面材料是热管理关键问题之一. 由于高导热特性,石墨烯基复合热界面材料成为研究热点. 从原子尺度深入理解复合体系中声子输运机理, 有助于提升复合体系导热性能. 本文从石墨烯内热阻和和复合体系界面热阻两方面介绍和讨论石墨烯复合体系导热的研究进展、导热机制以及调控方式. 最后对该方向研究成果和发展趋势进行总结和展望.
    With the rapid increase of the thermal power density of microelectronic devices and circuits, controlling its temperature has become an urgent need for the development and application of the electronic industry. By virtue of the ultrahigh thermal conductivity of graphene, developing high-performance graphene-based composite thermal interface materials has attracted much research attention and become one of hot research topics. The understanding of phonon transport mechanism in graphene-based composites at atomic scale can be helpful to enhance the heat conductive capability of composites systems. In this review, focused on graphene-based thermal interfaces materials, the heat conduction mechanism and the regulating strategy are introduced on both the internal thermal resistance and interfacial thermal resistance. Finally, the reseach progress and opportunities for future studies are also summarized.
      通信作者: 安盟, anmeng@sust.edu.cn ; 杨诺, nuo@hust.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 52006130)和陕西省自然科学基金基础研究项目(批准号: 2020JQ-692)资助的课题.
      Corresponding author: An Meng, anmeng@sust.edu.cn ; Yang Nuo, nuo@hust.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52006130), and the Fundamental Research Funds for Shaanxi Province (Grant No. 2020JQ-692) .
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  • 图 1  高功率密度集成电路散热示意图和热界面示意图

    Fig. 1.  The schematic diagram of high-power integrated chip for heat dissipation.

    图 2  (a) 石墨烯基复合体系中石墨烯面内振动(黑色箭头)和面外振动(红色箭头); (b) 复合体系中石墨烯内非平衡声子群温度; (c) 复合体系中界面石墨烯的面内振动(黑色箭头)和面外振动(红色箭头); (d) 界面石墨烯的非平衡声子温度

    Fig. 2.  (a), (c) The schematic diagram of two types of graphene-based composites where in-plane (out-of-plane) phonon group is denoted as black arrow (red arrow); (b), (d) the temperature distribution of in-plane phonon group, out-of-plane phonon group in graphene and polymer.

    图 3  (a) 面内异质结构和(c)范德瓦耳斯界面原子模型; (b) 面内异质界面和(d)范德瓦耳斯界面在沿热流方向的温度分布, 其中左边系统声子群A和B均对系统导热有贡献且存在非平衡现象, 右边系统仅有一种声子群

    Fig. 3.  (a) The atomic structure models of in-plane heterointerface and (c) van der Waals heterointerfaces;the temperature distribution of phonon group A(b), TA, left, phonon group B(d), TB, left in the left region and phonon group Tright in right region.

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    孙蓉 2019 集成技术 8 1Google Scholar

    Sun R 2019 J. Ind. Inf. Integration 8 1Google Scholar

    [2]

    Yu W, Liu C, Qiu L, Zhang P, Ma W, Yue Y, Xie H, Larkin L S 2018 Eng. Sci. 2 1

    [3]

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    [4]

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    [20]

    Huang X, Zhi C, Lin Y, Bao H, Wu G, Jiang P, Mai Y-W 2020 Mat. Sci. Eng. R 142 100577Google Scholar

    [21]

    An M, Wang H, Yuan Y, Chen D, Ma W, Sharshir S W, Zheng Z, Zhao Y, Zhang X 2022 Surf. Interfaces 28 101690Google Scholar

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    Xu Y, Wang X, Hao Q 2021 Compos. Commun. 24 100617Google Scholar

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    Zhou Y, Wu S, Long Y, Zhu P, Wu F, Liu F, Murugadoss V, Winchester W, Nautiyal A, Wang Z, Guo Z 2020 ES Mater. Manuf. 7 4

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    Vallabhaneni A K, Singh D, Bao H, Murthy J, Ruan X 2016 Phys. Rev. B 93 125432Google Scholar

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    Feng T, Yao W, Wang Z, Shi J, Li C, Cao B, Ruan X 2017 Phys. Rev. B 95 195202Google Scholar

    [29]

    Sullivan S, Vallabhaneni A, Kholmanov I, Ruan X, Murthy J, Shi L 2017 Nano lett. 17 2049Google Scholar

    [30]

    Feng T, Yao W, Wang Z, Shi J, Li C, Cao B, Ruan X 2017 Phys. Rev. B 95 195202

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    Wei X, Zhang T, Luo T 2017 ACS Energy Lett. 2 2283Google Scholar

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    Hao Q, Garg J 2021 ES Mater. Manuf. 14 36

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    Wang S, Xu D, Gurunathan R, Snyder G J, Hao Q 2020 J. Mater. 6 248

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    Xu D, Hanus R, Xiao Y, Wang S, Snyder G J, Hao Q 2018 Mater. Today Phys. 6 53Google Scholar

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    Roy Chowdhury P, Reynolds C, Garrett A, Feng T, Adiga S P, Ruan X 2020 Nano Energy 69 104428Google Scholar

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    Shanker A, Li C, Kim G H, Gidley D, Pipe K P, Kim J 2017 Sci. Adv. 3 e1700342Google Scholar

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    Kim G-H, Lee D, Shanker A, Shao L, Kwon M S, Gidley D, Kim J, Pipe K P 2015 Nat. Mater. 14 295Google Scholar

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    Zhang L, Liu L 2019 Nanoscale 11 3656Google Scholar

    [62]

    Luo T, Lloyd J R 2012 Adv. Funct. Mater. 22 2495Google Scholar

    [63]

    Losego M D, Grady M E, Sottos N R, Cahill D G, Braun P V 2012 Nat. Mater. 11 502Google Scholar

    [64]

    Mehra N, Mu L, Ji T, Yang X, Kong J, Gu J, Zhu J 2018 Appl. Mater. Today 12 92Google Scholar

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    Han H, Mérabia S, Müller-Plathe F 2017 J. Phys. Chem. Lett. 8 1946Google Scholar

    [66]

    Xiong Y, W H, Gao J, Chen W, Zhang J, Yue Y 2019 Acta Phys. Chim. Sin. 35 1150Google Scholar

    [67]

    Shen X, Wang Z, Wu Y, Liu X, He Y B, Kim J K 2016 Nano Lett. 16 3585Google Scholar

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    Renteria J, Legedza S, Salgado R, Balandin M, Ramirez S, Saadah M, Kargar F, Balandin A 2015 Mater. Design 88 214Google Scholar

    [69]

    Wu X, Luo T 2014 J. Appl. Phys. 115 014901Google Scholar

    [70]

    Mann D, Pop E, Cao J, Wang Q, Goodson K 2006 J. Phys. Chem. B 110 1502Google Scholar

    [71]

    Maassen J, Lundstrom M 2016 J. Appl. Phys. 119 095102Google Scholar

    [72]

    Lu Z, Shi J, Ruan X 2019 J. Appl. Phys. 125 085107Google Scholar

    [73]

    Zhong J, Xi Q, Wang Z, Nakayama T, Li X, Liu J, Zhou J 2021 J. App. Phys. 129 195102Google Scholar

    [74]

    Guo Y, Zhang Z, Bescond M, Xiong S, Nomura M, Volz S 2021 Phys. Rev. B 103 174306Google Scholar

    [75]

    Cheng Z, Li R, Yan X, Jernigan G, Shi J, Liao M E, Hines N J, Gadre C A, Idrobo J C, Lee E, Hobart K D, Goorsky M S, Pan X, Luo T, Graham S 2021 Nat. Commun. 12 6901Google Scholar

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    Mortazavi B, Podryabinkin E V, Roche S, Rabczuk T, Zhuang X, Shapeev A V 2020 Mater. Horiz. 7 2359Google Scholar

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  • 文章访问数:  7394
  • PDF下载量:  288
  • 被引次数: 0
出版历程
  • 收稿日期:  2022-02-21
  • 修回日期:  2022-04-16
  • 上网日期:  2022-08-10
  • 刊出日期:  2022-08-20

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