二维范德瓦耳斯半导体莫尔超晶格实验研究进展

李听昕

doi:10.7498/aps.71.20220347

摘要

在二维范德瓦耳斯材料中, 可以通过转角及晶格失配构造周期性的莫尔超晶格. 自从实验上在“魔角”石墨烯系统中观察到关联绝缘体态和超导电性以来, 利用各种二维范德瓦耳斯材料构造莫尔超晶格并研究其中的新奇量子物态成为了凝聚态物理研究的热点和前沿问题. 本文主要综述了最近几年在二维半导体过渡金属硫族化合物莫尔超晶格系统中的相关实验进展. 在该系统中实现电子“平带”不依赖于特定魔角, 实验上, 一系列的关联电子物态和拓扑电子物态被相继发现和证实. 进一步的理论和实验研究有望在该系统中揭示更多的受电子关联作用和拓扑物理共同支配的新奇量子物态.

关键词:

Abstract

A moiré superlattice can be formed by overlaying two atomically thin van der Waals materials with a rotation angle or with a lattice mismatch. Since the discovery of correlated insulators and superconductivity in magic angle twisted bilayer graphene, constructing moiré superlattices by various two-dimensional (2D) van der Waals materials and studying their novel properties emerge as a hot topic and research frontier in condensed matter physics. Here we review the recent experimental progress of 2D transition metal dichalcogenide moiré superlattices. In this system, the formation of moiré flat band does not rely on certain magic angles. Experimentally, a series of correlated electron states and topological states have been discovered and confirmed. Further theoretical and experimental studies can find a wealth of emergent phenomena caused by the combined influence of strong correlation and topology in transition metal dichalcogenide moiré superlattice.

Keywords:

moiré superlattices /
correlated electron states /
topological states /
two-dimensional van der Waals semiconductors

作者及机构信息

李听昕^1,2

1.
上海交通大学物理与天文学院, 沈阳国家材料研究中心上海交通大学分部, 人工结构及量子调控教育部重点实验室, 上海　200240

2.
上海交通大学李政道研究所, 上海　201210

通信作者: 李听昕, txli89@sjtu.edu.cn

基金项目: 国家自然科学基金(批准号: 12174249)和上海市自然科学基金(批准号: 22ZR1430900)资助的课题.

Authors and contacts

Li Ting-Xin^1,2

1.
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics & Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

2.
Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 201210, China

Corresponding author: Li Ting-Xin, txli89@sjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12174249) and the Natural Science Foundation of Shanghai, China (Grant No. 22ZR1430900)

文章全文 : translate this paragraph

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施引文献

图 1 过渡金属硫族化合物　(a), (b) 2H相TMDc的结构示意图, 其中青色代表过渡金属原子, 黄色代表硫族元素原子; (c) 2H相TMDc的能带结构示意图

Fig. 1. Transition metal dichalcogenides: (a), (b) Schematic illustrations of 2H phase TMDc, where cyan balls denote transition metal atoms and yellow balls denote chalcogenide atoms; (c) schematic band structures of 2H TMDc.

下载: 全尺寸图片幻灯片

图 2 转角MoS₂莫尔超晶格^[91]. AA堆垛(3.5°转角, (a)—(d))和AB堆垛的(56.5°转角, (e)—(h))MoS₂莫尔超晶格的示意图及高对称性点的堆垛示意图

Fig. 2. Twisted MoS₂ moiré superlattices^[91]: Schematics plots of AA-stacked (3.5° twisted, (a)–(d)) and AB-stacked (56.5° twisted, (e)–(h)) MoS₂ moiré superlattices, the high-symmetry stackings are highlighted by circles.

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图 3 WSe₂/WS₂莫尔超晶格中的关联电子态　(a) 基于光学探测得到的WSe₂/WS₂莫尔超晶格样品的量子电容信号^[44]; (b)莫尔超晶格Mott绝缘体和广义的Wigner晶态示意图^[44]; (c) WSe₂/WS₂莫尔超晶格能带结构示意图^[45]; (d) 不同温度下通过两端输运测量得到的WSe₂/WS₂莫尔超晶格的电阻随填充因子的变化^[45]; (e) 通过磁光测量得到的等效g因子和Wiess温度随v的变化^[45]. 值得指出的是, 图(a)中横轴n/n₀的含义即为莫尔超晶格填充因子v ; 而图(d), (e)中横轴n/n₀的含义为莫尔子带填充因子, 即为2v

Fig. 3. Correlated states in WSe₂/WS₂ moiré superlattices: (a) Quantum capacitance signals detected by optical probe in WSe₂/WS₂ moiré superlattices^[44]; (b) schematic illustrations of Mott insulator and generalized Wigner crystal states^[44]; (c) schematic band alignment of the WSe₂/WS₂ moiré superlattice; (d) temperature dependence of two-terminal resistance of WSe₂/WS₂ moiré superlattices versus moiré filling factors^[45]; (e) g factors and Wiess temperatures versus moiré filling factors obtained by magneto-optical measurements^[45]. The top x-axis n/n₀ of panel (a) equals to the moiré filling factor v, whereas the x-axis n/n₀ of panels (d) and (e) represents the moiré mini band filling factor, which equals to 2v.

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图 4 TMDc莫尔超晶格中的Mott相变　(a) 在转角WSe₂莫尔超晶格中, 样品电阻随温度和填充因子的变化^[62]; (b) 不同填充因子下转角WSe₂电阻随温度变化规律的概括, 其中在相变临界区域电阻随温度的变化明显不同于费米液体^[62]; (c) AA堆垛的WSe₂/MoTe₂莫尔超晶格样品的电阻随双栅极的变化^[63]; (d) 保持莫尔子带半满时, 外加电场使WSe₂/MoTe₂中发生连续Mott相变^[63]; (e) 莫尔子带半满时, 不同电场下的样品电阻随温度的变化, 可以清楚地看到Mott绝缘体到金属的相变^[63].

Fig. 4. Mott transition in TMDc moiré superlattices: (a) Measured resistance versus temperature and moiré filling factors of twisted WSe₂ moiré superlattices ^[62]; (b) summary of temperature dependent resistance of twisted WSe₂ at various moiré filling factors ^[62]; (c) resistance of AA-stacked WSe₂/MoTe₂ moiré superlattices versus dual gates ^[63]; (d) Mott transition at half-filled moiré mini band induced by applied electric fields ^[63]; (e) when the first moiré mini band is half-filled, the measured temperature dependent resistance at various electric fields, where a transition from a Mott insulator phase to a metallic phase can be clearly identified^[63].

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图 5 TMDc莫尔同质结中的拓扑能带结构^[79]　(a) 以1.2°转角的MoTe₂莫尔超晶格为例, 计算得到的价带K谷的能带结构及莫尔子带的陈数; (b)态密度随莫尔子带填充因子的变化; (c)第一莫尔子带Berry曲率的分布; (d) 该系统中电子跳跃项的示意图, 不同颜色用以区分两层MoTe₂

Fig. 5. Topological band structures in TMDc homo-bilayer moiré superlattices^[79]: (a) Calculated band structure and Chern numbers at K valley of a 1.2° twisted MoTe₂ twisted moiré superlattice; (b) density of state versus moiré filling factors; (c) Berry curvature distributions of the first moiré mini band; (d) illustration of the hopping terms.

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图 6 AB堆垛的WSe₂/MoTe₂莫尔超晶格中的拓扑量子态^[65]　(a) 莫尔超晶格及高对称点堆垛方式示意图, 其中M代表Mo或W原子, X代表Se或Te原子; (b)当莫尔子带填满时, 电场诱导系统发生能带绝缘体到量子自旋霍尔效应的相变; 当莫尔子带半满时, 电场诱导系统发生Mott绝缘体到量子反常霍尔效应的相变; 输运测量得到的纵向电阻R_xx (c)和霍尔电阻R_xy (d)随顶栅和底栅栅压变化的二维图, 测量温度为300 mK, 其中绿色虚线圆圈示意的是量子反常霍尔效应出现的区域; 在出现量子反常霍尔效应区域, 不同温度下测量得到的R_xx (e)和R_xy (f)随磁场的变化

Fig. 6. Topological states in AB-stacked WSe₂/MoTe₂ moiré superlattices ^[65]: (a) Schematic plots of moiré superlattices and high symmetry stacking points, where M denotes Mo or W atoms; X denotes Se or Te atoms. (b) Schematic illustrations of electric field induced topological phase transitions. A band insulator to a quantum spin Hall insulator transition is possible when the first moiré mini band is full-filled, and a Mott insulator to a quantum anomalous Hall insulator transition could occur when the first moiré mini band is half-filled. The measured R_xx (c) and R_xy (d) versus top and bottom gate voltages at 300 mK, where the green dashed line circle denotes the quantum anomalous Hall region. At the quantum anomalous Hall region, the measured R_xx and R_xy versus B-field at various temperatures are shown in (e) and (f), respectively.

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