吉帕级单轴应力下Mn<sub>3</sub>Sn单晶的磁化率增强

邓珊珊; 宋平; 刘潇贺; 姚森; 赵谦毅

doi:10.7498/aps.73.20240287

摘要

如何在室温下实现非共线反铁磁Mn₃Sn自旋的调控是一项挑战. 本文通过对Mn₃Sn单晶施加GPa级单轴应力调控其磁结构, 发现随着应力的增大, 晶格常数a逐渐减小. 此外, GPa级单轴应力下Mn₃Sn的磁化率(χ)不同于MPa级单轴应力下的结果, 其值不再是一个定值, 而是随着应力的增大而增大. 当沿$ \text{[11}\bar{2}\text{0]} $方向施加1.12 GPa应力后, χ达到0.0203 μ_B/(f.u.·T); 当沿$ \text{[01}\bar{1}\text{0]} $方向施加1.11 GPa应力后, χ达到0.0332 μ_B/(f.u.·T), 为未变形样品的2.4倍. 进一步的实验结果表明, GPa级的单轴应力打破了kagome晶格的面内六边形的对称性, 从而改变Mn原子间的交换相互作用, 增强体系的反铁磁耦合作用, 使χ不再是一个定值. 这一发现将会为反铁磁自旋调控提供新的思路.

关键词:

反铁磁 /
单轴应力 /
单晶 /
晶格畸变

Abstract

How to achieve spin control of noncollinear antiferromagnetic Mn₃Sn at room temperature is a challenge. In this study, we modulate the magnetic structure of Mn₃Sn single crystals by subjecting them to uniaxial stress at the GPa level using a high-pressure combined deformation method. Initially, the single crystal is sliced into regular cuboids, then embedded in a stainless steel sleeve, and finally, uniaxial stress is applied along the $ \text{[11}\bar{2}\text{0]} $ direction and $ \text{[01}\bar{1}\text{0]} $ direction of the Mn₃Sn single crystal. Under high stress, the single crystal undergoes plastic deformation. Our observations reveal lattice distortion in the deformed single crystal, with the lattice parameter gradually decreasing as the stress level increases. In addition, the magnetic susceptibility of Mn₃Sn under GPa uniaxial stress (χ) is different from that under MPa uniaxial stress, and its value is no longer fixed but increases with the increase of stress. When 1.12 GPa stress is applied in the $ \text{[11}\bar{2}\text{0]} $ direction, χ reaches 0.0203 $ {\text{μ}}_{\text{B}}\cdot{\text{f.u.}}^{{-1}}\cdot{\text{T}}^{{-1}} $, which is 1.42 times that of the undeformed sample. In the case of stress applied along the $ \text{[01}\bar{1}\text{0]} $ direction, χ ≈ 0.0332 $ {\text{μ}}_{\text{B}}\cdot{\text{f.u.}}^{{-1}}\cdot{\text{T}}^{{-1}} $ when the stress is 1.11 GPa. This result is also 2.66 times greater than the reported results. We further calculate the values of trimerization parameter (ξ), isotropic Heisenberg exchange interaction (J), and anisotropic energy (δ) of the system under different stresses. Our results show that ξ gradually increases, J gradually decreases, and δ gradually increases with the increase of stress. These results show that the GPa uniaxial stress introduces anisotropic strain energy into the single crystal, breaking the symmetry of the in-plane hexagon of the kagome lattice, which causes the bond length of the two equilateral triangles composed of Mn atoms to change. Thus, the exchange coupling between Mn atoms in the system is affected, the anisotropy of the system is enhanced, and the antiferromagnetic coupling of the system is enhanced. Therefore, the system χ is no longer a constant value and gradually increases with the increase of stress. This discovery will provide new ideas for regulating the anti-ferromagnetic spin.

Keywords:

作者及机构信息

燕山大学理学院, 亚稳材料制备技术与科学国家重点实验室, 河北省微结构材料物理重点实验室, 秦皇岛　066000

通信作者: 宋平, psong@ysu.edu.cn

基金项目: 国家自然科学基金 (批准号: 52101233, 51931007, U22A20116, 52071279, 52101234, 52371200)、河北省自然科学基金(批准号: E2022203010)和河北省创新能力提升工程(批准号: 22567605H)资助的课题.

Authors and contacts

State Key Laboratory of Metastable Materials Science & Technology, Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066000, China

Corresponding author: Song Ping, psong@ysu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 52101233, 51931007, U22A20116, 52071279, 52101234, 52371200), the Natural Science Foundation of Hebei Province, China (Grant No. E2022203010), and the Innovation Capability Improvement Project of Hebei Province, China (Grant No. 22567605H).

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施引文献

图 1 (a) Mn₃Sn晶体结构图; (b) Mn₃Sn磁结构图; (c), (d) Sn助熔剂法制得的单晶; (e)晶向标定示意图

Fig. 1. (a) Mn₃Sn crystal structure diagram; (b) Mn₃Sn magnetic structure diagram; (c), (d) single crystal obtained by Sn flux method; (e) crystal orientation calibration diagram.

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图 2 Mn₃Sn单晶高压变形示意图

Fig. 2. Schematic diagram of Mn₃Sn single crystal deformation under high pressure.

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图 3 (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力变形前后的XRD图; (c), (e)变形前$ \text{(11}\bar{2}\text{0)} $, $ \text{(01}\bar{1}\text{0)} $晶面的HRTEM图; (d), (f)变形前$ \text{(11}\bar{2}\text{0)} $, $ \text{(01}\bar{1}\text{0)} $晶面的SAED图; (g), (h)变形后$ \text{(11}\bar{2}\text{0)} $晶面的HRTEM图; (i), (j)变形后$ \text{(01}\bar{1}\text{0)} $晶面的HRTEM图

Fig. 3. (a), (b) XRD patterns before and after stress deformation along $ \text{[11}\bar{2}\text{0]} $ and $ \text{[01}\bar{1}\text{0]} $ directions; (c), (e) HRTEM images of $ \text{(11}\bar{2}\text{0)} $ and $ \text{(01}\bar{1}\text{0)} $ crystal faces before deformation; (d), (f) SAED patterns of $ \text{(11}\bar{2}\text{0)} $ and $ \text{(01}\bar{1}\text{0)} $ crystal faces before deformation; (g), (h) HRTEM images of $ \text{(11}\bar{2}\text{0)} $ crystal face after deformation; (i), (j) HRTEM images of $ \text{(01}\bar{1}\text{0)} $ crystal face after deformation.

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图 4 (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后样品的磁滞回线; (c), (d)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后样品的磁化率χ和剩磁M_r随应力的变化

Fig. 4. (a), (b) Hysteresis loops of samples before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $ and $ \text{[01}\bar{1}\text{0]} $ directions; (c), (d) the changes of magnetic susceptibility χ and remanence M_r of sample demagnetization curve with stress before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $ and $ \text{[01}\bar{1}\text{0]} $ directions.

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图 5 (a), (b)沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向变形前后三聚参数ξ随应力的变化; (c), (d)黑色曲线为沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力前后单晶的各向同性海森伯交换作用J, 红色曲线为沿$ \text{[11}\bar{2}\text{0]} $, $ \text{[01}\bar{1}\text{0]} $方向施加应力前后单晶的各向异性能δ

Fig. 5. (a), (b) Changes of trimerization parameters ξ with stress before and after deformation along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $ and $ \text{[01}\bar{1}\text{0]} $ directions. (c), (d) The black curve shows the isotropic Heisenberg exchange J of a single crystal before and after stress is applied in along $ \text{}\text{[11}\bar{2}\text{0]}\text{} $ and $ \text{[01}\bar{1}\text{0]} $ directions. The red curve shows the anisotropic energy δ of a single crystal before and after stress is applied in $ \text{[11}\bar{2}\text{0]}\text{} $ and $ \text{[01}\bar{1}\text{0]} $ directions.

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吉帕级单轴应力下Mn₃Sn单晶的磁化率增强