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TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD

GAAS SINGLE CRYSTAL RESEARCH GROUP

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TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD

GAAS SINGLE CRYSTAL RESEARCH GROUP
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(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

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  • Abstract views:  7861
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Publishing process
  • Received Date:  22 September 1975
  • Published Online:  05 January 1976

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