| [1] |
Zhuang Ying-Hao, Fu Yun, Cai Wei, Zhang Qing-Song, Wu Zhen, Guo Lin-Hui, Zhong Zhe-Qiang, Zhang Bin. Analysis of physical mechanism of beam crosstalk in semiconductor laser array spectral-beam-combined system. Acta Physica Sinica,
2023, 72(2): 024206.
doi: 10.7498/aps.72.20221783
|
| [2] |
Zong Zhi-Cheng, Pan Dong-Kai, Deng Shi-Chen, Wan Xiao, Yang Li-Na, Ma Deng-Ke, Yang Nuo. Mixed mismatch model predicted interfacial thermal conductance of metal/semiconductor interface. Acta Physica Sinica,
2023, 72(3): 034401.
doi: 10.7498/aps.72.20221981
|
| [3] |
Zhang Cun-Bo, Yan Tao, Yang Zhi-Qiang, Ren Wei-Tao, Zhu Zhan-Ping. heoretical model of influence of frequency on thermal breakdown in semiconductor device. Acta Physica Sinica,
2017, 66(1): 018501.
doi: 10.7498/aps.66.018501
|
| [4] |
Li Rui. The mechanisms of electric-dipole spin resonance in quasi-one-dimensional semiconductor quantum dot. Acta Physica Sinica,
2015, 64(16): 167303.
doi: 10.7498/aps.64.167303
|
| [5] |
Wang Chang-Hong, Lin Tao, Zeng Zhi-Huan. Analysis and simulation of semiconductor thermoelectric power generation process. Acta Physica Sinica,
2014, 63(19): 197201.
doi: 10.7498/aps.63.197201
|
| [6] |
Zhang Xi-Ren, Gao Chun-Ming. Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique. Acta Physica Sinica,
2014, 63(13): 137801.
doi: 10.7498/aps.63.137801
|
| [7] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica,
2012, 61(1): 017105.
doi: 10.7498/aps.61.017105
|
| [8] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
| [9] |
Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica,
2012, 61(4): 047303.
doi: 10.7498/aps.61.047303
|
| [10] |
Ren Da-Nan, Ren Ren, Xu Jin. An all-proton spin quantum gate in semiconductor spin magnetic resonance force system. Acta Physica Sinica,
2010, 59(11): 8155-8159.
doi: 10.7498/aps.59.8155
|
| [11] |
Wang Run-Sheng, Meng Wei-Min, Peng Ying-Quan, Ma Chao-Zhu, Li Rong-Hua, Xie Hong-Wei, Wang Ying, Zhao Ming, Yuan Jian-Ting. The theory of physical doping in organic semiconductor. Acta Physica Sinica,
2009, 58(11): 7897-7903.
doi: 10.7498/aps.58.7897
|
| [12] |
Li Xun-Shuan, Peng Ying-Quan, Yang Qing-Sen, Xing Hong-Wei, Lu Fei-Ping. Analytical model of charge transport at organic semiconductor interfaces. Acta Physica Sinica,
2007, 56(9): 5441-5445.
doi: 10.7498/aps.56.5441
|
| [13] |
ZHENG YONG-MEI, CHEN YU, MIAO RONG-ZHI. ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL. Acta Physica Sinica,
1996, 45(9): 1543-1550.
doi: 10.7498/aps.45.1543
|
| [14] |
WANG WEN-GUO, MA BEN-KUN. THE SUPERCONDUCTING PROCESS OF SOME DOPED SEMICONDUCTORS——THE IMPURITY-PLASMON MODEL. Acta Physica Sinica,
1988, 37(5): 830-835.
doi: 10.7498/aps.37.830
|
| [15] |
NAN CE-WEN. A MICROSTRUCTURE PHYSICAL MODEL OF SENSITIVE SEMICONDUCTOR CERAMICS (Ⅱ). Acta Physica Sinica,
1987, 36(10): 1313-1320.
doi: 10.7498/aps.36.1313
|
| [16] |
MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU. ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL. Acta Physica Sinica,
1986, 35(6): 808-811.
doi: 10.7498/aps.35.808
|
| [17] |
WU DING-FEN, WANG DE-NING. A MODEL OF OHMIC CONTACT OF GaAs AND OTHER SEMICONDUCTOR. Acta Physica Sinica,
1985, 34(3): 332-340.
doi: 10.7498/aps.34.332
|
| [18] |
CHEN CUN-LI. SPECIFIC CONTACT RESISTANCE OF METAL-BULK SEMI-CONDUCTOR——FOUR-POINT CONFIGURATION MODEL. Acta Physica Sinica,
1984, 33(9): 1314-1320.
doi: 10.7498/aps.33.1314
|
| [19] |
ZHANG EN-QIU. THEORY OF THERMIONIC EMISSION (I)——A CRITICISM OF THE SEMI-CONDUCTOR MODEL OF THE OXIDE-COATED CATHODE. Acta Physica Sinica,
1974, 23(5): 43-52.
doi: 10.7498/aps.23.43
|
| [20] |
. МОДЕЛЬ ХИМИЧЕСКИХ СВЯЗЕЙ ДЛЯ ВАНЛЕНТНЫХ ПОЛУПРОВОДНИКОВ. Acta Physica Sinica,
1962, 18(12): 609-620.
doi: 10.7498/aps.18.609
|
下载:
