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本文提出了一个“杂质-等离振子模型”,描述掺杂半导体的超导过程。作为其推论:1)定性解释了Tc随压力增加而线性下降的实验结果;2)推导出了一个超导判据,说明重掺杂(n型)是半导体获得超导性的必要条件;3)提出了一种测量超导性半导体中费密能级与杂质能级相对位置的新方法。An impurity-plasmon model is presented to describe the superconducting process of some doped semiconductors. The linear decreasing Tc-△P relation is obtained which is verified qualitatively by the hydrostatic pressure experiments. A criterion for superconductivity is given and a new method of measuring the Fermi energy level is proposed for semiconductors exhibiting superconductivity.
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