[1] |
Wang Hai-Ling, Wang Ting, Zhang Jian-Jun. Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica,
2019, 68(11): 117301.
doi: 10.7498/aps.68.20190317
|
[2] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica,
2016, 65(12): 127401.
doi: 10.7498/aps.65.127401
|
[3] |
Wei Pang, Li Kang, Feng Xiao, Ou Yun-Bo, Zhang Li-Guo, Wang Li-Li, He Ke, Ma Xu-Cun, Xue Qi-Kun. Growth of micro-devices of topological insulator thin films by molecular beam epitaxy on substrates pre-patterned with photolithography. Acta Physica Sinica,
2014, 63(2): 027303.
doi: 10.7498/aps.63.027303
|
[4] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
[5] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2013, 62(5): 058101.
doi: 10.7498/aps.62.058101
|
[6] |
Wu Chen-Yang, Gu Jin-Hua, Feng Ya-Yang, Xue Yuan, Lu Jing-Xiao. The characterization of hydrogenated amorphous silicon and epitaxial silicon thin films grown on crystalline silicon substrates by using spectroscopic ellipsometry. Acta Physica Sinica,
2012, 61(15): 157803.
doi: 10.7498/aps.61.157803
|
[7] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
[8] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
[9] |
Zhang Ying-Tang, He Meng, Chen Zi-Yu, Lü Hui-Bin. Epitaxial growth of La0.67Sr0.33MnO3 on glass by laser molecular beam epitaxy. Acta Physica Sinica,
2009, 58(3): 2002-2004.
doi: 10.7498/aps.58.2002
|
[10] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin. Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica,
2008, 57(2): 1236-1240.
doi: 10.7498/aps.57.1236
|
[11] |
Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano. Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica,
2007, 56(7): 4127-4131.
doi: 10.7498/aps.56.4127
|
[12] |
Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua. . Acta Physica Sinica,
2002, 51(8): 1793-1797.
doi: 10.7498/aps.51.1793
|
[13] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN. EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica,
2000, 49(6): 1132-1135.
doi: 10.7498/aps.49.1132
|
[14] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, WU RONG-HAN, FENG SONG-LIN, R.NOETZEL, U.JAHN, K.H.PLOOG. FORMATION OF GaAs UNIFORM DOT STRUCTURES GROWN BY MBE ON PATTERNED SUBSTRATES. Acta Physica Sinica,
1998, 47(8): 1346-1353.
doi: 10.7498/aps.47.1346
|
[15] |
YANG SHI-E, MA BING-XIAN, JIA YU, SHEN SAN-GUO, FAN XI-QING. ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES. Acta Physica Sinica,
1998, 47(10): 1704-1712.
doi: 10.7498/aps.47.1704
|
[16] |
YAO JIANG-HONG, ZOU YUN-JUAN, ZHANG XING-WANG, CHEN GUANG-HUA. THE ORIENTED GROWTH OF C60 FILMS-ON GaAs(100) SUBSTRATE. Acta Physica Sinica,
1997, 46(3): 481-485.
doi: 10.7498/aps.46.481
|
[17] |
MAO HUI-BING, LU WEI, MA ZHAO-HUI, LIU XING-QUAN, SHEN XUE-CHU. MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE. Acta Physica Sinica,
1994, 43(7): 1118-1122.
doi: 10.7498/aps.43.1118
|
[18] |
Lü HONG-QIANG, WANG JIE, SHEN JUN, LIU YONG, WANG XUN, WANG CHANG-PING, WANG JIAN-BAO, LI CHEN, SHEN XIAO-LIANG. EFFECT OF SUBSTRATE TEMPERATURE ON ZnSe FILMS GROWN BY HOT WALL EPITAXY. Acta Physica Sinica,
1992, 41(8): 1308-1314.
doi: 10.7498/aps.41.1308
|
[19] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI. THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica,
1990, 39(12): 1959-1964.
doi: 10.7498/aps.39.1959
|
[20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(10): 1607-1612.
doi: 10.7498/aps.37.1607
|