Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition

Xiong Fei; Yang Jie; Zhang Hui; Chen Gang; Yang Pei-Zhi

doi:10.7498/aps.61.218101

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Xiong Fei, Yang Jie, Zhang Hui, Chen Gang, Yang Pei-Zhi. Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition. Acta Physica Sinica, 2012, 61(21): 218101. DOI: 10.7498/aps.61.218101

Citation:

Xiong Fei, Yang Jie, Zhang Hui, Chen Gang, Yang Pei-Zhi. Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition. Acta Physica Sinica, 2012, 61(21): 218101. DOI: 10.7498/aps.61.218101

Citation:

Xiong Fei, Yang Jie, Zhang Hui, Chen Gang, Yang Pei-Zhi. Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition. Acta Physica Sinica, 2012, 61(21): 218101. DOI: 10.7498/aps.61.218101