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The Ge quantum dots on Si substrate are prepared by ion beam sputtering deposition (IBSD). The growth evolution is observed to experience two stages with Ge coverage (θ) increasing. When θ increases from 6 monolayers (ML) to 10.5 ML, the average base width and height of quantum dots both increase, and the dome shape dots with small aspect ratio values are obtained. As the dots grow up, Ge atoms are also accumulated in the wetting layer, which contributes to the observed quantum dot density increasing mildly during this stage. When θ is in a range from 11.5 ML to 17 ML, vertical growth dominates the dot evolution. Another dome shape quantum dots are prepared with large aspect ratio values. Ge coverage gain results in the dot density increasing rapidly. A wetting layer decomposition process is demonstrated to give significant effect on that. The growth transition occurs as θ increases from 10.5 ML to 11.5 ML, and the dot density is enhanced 6.4 times in this course. So it is concluded that the evolution of Ge quantum dot prepared by IBSD is very different from that deposited on the thermal equilibrium condition. The observed characters of the dot shape and size distribution result from the kinetic behaviors of the surface atoms which are restricted by the thermodynamic limitation. Ge coverage is the one of the most important factors which can change the free energy. On the other hand, the energic sputtered atom bombardment enhances surface diffusion and defers nucleation of three-dimensional islands until the superstrain wetting layer is formed, which can also change the system free energy and the surface atom kinetic behaviors. So the growth evolution of Ge quantum dots prepared by IBSD is related so much with the effect of atom bombardment on the quantum dot growth.
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Keywords:
- Ge quantum dot /
- ion beam sputtering deposition /
- surface morphology /
- behavior of surface atoms
[1] Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943
[2] Yang H B, Tao Z S, Lin J H, Lu F, Jiang Z M, Zhong Z Y 2008 Appl. Phys. Lett. 92 111907
[3] Rokhinson L P, Tsui D C, Benton J L 1999 Appl. Phys. Lett. 75 2413
[4] Tong S, Lee J Y, Kin H J, Liu F, Wang K L 2005 Opt. Mater. 27 1097
[5] Larsson M, Elfving A, Holtz P O, Hnsson G V, Ni W X 2003 Surf. Sci. 532-535 832
[6] Kamins T I, Carr E C, Williams R S, Rosner S J 1997 J. Appl. Phys. 81 211
[7] Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931
[8] Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D A A, Williams R S 1998 Science 279 353
[9] Capellini G, De Seta M, Evangelisti F 2003 J. Appl. Phys. 93 291
[10] Shchukin V A, Ledentsov N N, Kopev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[11] Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Williams R S 1999 J. Appl. Phys. 85 1159
[12] Dobbs H T, Vvedebsky D D, Zangwill A, Johansson J, Carlsson N, Seifert W 1997 Phys. Rev. Lett. 79 897
[13] Koduvely H M, Zangwill A 1999 Phys. Rev. B 60 R2204
[14] Song H Z, Usuki T, Nakata Y, Yokoyama N, Sasakura H, Muto S 2006 Phys. Rev. B 73 115327
[15] Vailionis A, Cho B, Glass G, Desjardins P, Cahill D G, Greene J E 2000 Phys. Rev. Lett. 85 3672
[16] Chen K M, Jesson D E, Pennycook S J, Thundat T, Warmack R J 1997 Phys. Rev. B 56 R1700
[17] Meyer F, Schwebel C, Pellet C, Gautherin G, Buxbaum A, Eizenberg M, Raizman A 1990 Thin Solid Films 184 117
[18] Mosleh M, Meyer F, Schwebel C, Pellet C, Eizenberg M 1994 Thin Solid Films 246 30
[19] Choil C H, Hultman L, Barnett S A 1990 J. Vac. Sci. Technol. A 8 1587
[20] Sasaki K, Takahashi Y, Ikeda T, Hata T 2002 Vacuum 66 457
[21] Xiong F, Pan H X, Zhang H, Yang Y 2011 Acta Phys. Sin. 60 088102 (in Chinese) [熊飞, 潘红星, 张辉, 杨宇 2011 物理学报 60 088102]
[22] Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[23] Leonard D, Pond K, Petroff P M 1994 Phys. Rev. B 50 11687
[24] Daruka I, Tersoff J, Barabási A L 1999 Phys. Rev. Lett. 82 2753
[25] Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 284
[26] Barabási A L 1999 Mater. Sci. Eng. B 67 23
[27] Zhang Y W, Brower A F 2001 Appl. Phys. Lett. 78 2706
[28] Johansson J, Seifert W 2002 J. Crys. Growth 234 132
[29] Zhang Y, Drucker J 2003 J. Appl. Phys. 93 9583
[30] Floro J A, Lucadamo G A, Chason E, Freund L B, Sinclair M, Twesten R D, Hwang R Q 1998 Phys. Rev. Lett. 80 4717
[31] Rickman J M, Srolovitz D J 1993 Surf. Sci. 284 211
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[1] Eaglesham D J, Cerullo M 1990 Phys. Rev. Lett. 64 1943
[2] Yang H B, Tao Z S, Lin J H, Lu F, Jiang Z M, Zhong Z Y 2008 Appl. Phys. Lett. 92 111907
[3] Rokhinson L P, Tsui D C, Benton J L 1999 Appl. Phys. Lett. 75 2413
[4] Tong S, Lee J Y, Kin H J, Liu F, Wang K L 2005 Opt. Mater. 27 1097
[5] Larsson M, Elfving A, Holtz P O, Hnsson G V, Ni W X 2003 Surf. Sci. 532-535 832
[6] Kamins T I, Carr E C, Williams R S, Rosner S J 1997 J. Appl. Phys. 81 211
[7] Ross F M, Tromp R M, Reuter M C 1999 Science 286 1931
[8] Medeiros-Ribeiro G, Bratkovski A M, Kamins T I, Ohlberg D A A, Williams R S 1998 Science 279 353
[9] Capellini G, De Seta M, Evangelisti F 2003 J. Appl. Phys. 93 291
[10] Shchukin V A, Ledentsov N N, Kopev P S, Bimberg D 1995 Phys. Rev. Lett. 75 2968
[11] Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A, Williams R S 1999 J. Appl. Phys. 85 1159
[12] Dobbs H T, Vvedebsky D D, Zangwill A, Johansson J, Carlsson N, Seifert W 1997 Phys. Rev. Lett. 79 897
[13] Koduvely H M, Zangwill A 1999 Phys. Rev. B 60 R2204
[14] Song H Z, Usuki T, Nakata Y, Yokoyama N, Sasakura H, Muto S 2006 Phys. Rev. B 73 115327
[15] Vailionis A, Cho B, Glass G, Desjardins P, Cahill D G, Greene J E 2000 Phys. Rev. Lett. 85 3672
[16] Chen K M, Jesson D E, Pennycook S J, Thundat T, Warmack R J 1997 Phys. Rev. B 56 R1700
[17] Meyer F, Schwebel C, Pellet C, Gautherin G, Buxbaum A, Eizenberg M, Raizman A 1990 Thin Solid Films 184 117
[18] Mosleh M, Meyer F, Schwebel C, Pellet C, Eizenberg M 1994 Thin Solid Films 246 30
[19] Choil C H, Hultman L, Barnett S A 1990 J. Vac. Sci. Technol. A 8 1587
[20] Sasaki K, Takahashi Y, Ikeda T, Hata T 2002 Vacuum 66 457
[21] Xiong F, Pan H X, Zhang H, Yang Y 2011 Acta Phys. Sin. 60 088102 (in Chinese) [熊飞, 潘红星, 张辉, 杨宇 2011 物理学报 60 088102]
[22] Chung H C, Liu C P, Lai Y L 2008 Appl. Phys. A 91 267
[23] Leonard D, Pond K, Petroff P M 1994 Phys. Rev. B 50 11687
[24] Daruka I, Tersoff J, Barabási A L 1999 Phys. Rev. Lett. 82 2753
[25] Jin G, Liu J L, Wang K L 2003 Appl. Phys. Lett. 83 284
[26] Barabási A L 1999 Mater. Sci. Eng. B 67 23
[27] Zhang Y W, Brower A F 2001 Appl. Phys. Lett. 78 2706
[28] Johansson J, Seifert W 2002 J. Crys. Growth 234 132
[29] Zhang Y, Drucker J 2003 J. Appl. Phys. 93 9583
[30] Floro J A, Lucadamo G A, Chason E, Freund L B, Sinclair M, Twesten R D, Hwang R Q 1998 Phys. Rev. Lett. 80 4717
[31] Rickman J M, Srolovitz D J 1993 Surf. Sci. 284 211
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