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Mn-doping effects on structural, optical and magnetic properties of BaSn1-xMnxO3

Zhang Peng Liu Qin-Zhuang Su Fu-Hai Liu Qiang-Chun Liu Zhe Song Wen-Hai Dai Jian-Ming

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Mn-doping effects on structural, optical and magnetic properties of BaSn1-xMnxO3

Zhang Peng, Liu Qin-Zhuang, Su Fu-Hai, Liu Qiang-Chun, Liu Zhe, Song Wen-Hai, Dai Jian-Ming
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  • Polycrystalline bulk samples of BaSn1-xMnxO3 with x=0, 0.05, 0.10 and 0.13 are prepared by the conventional solid state reaction method. The effects of Mn concentration on crystal structural, optical and magnetic properties of BaSn1-xMnxO3 are investigated systematically. Powder X-ray diffraction (XRD) shows that each of these compounds presens a perovskite structure (with the space group Pm3m) without the secondary crystalline phase. The Mn ions take the Sn sites which is revealed by the XRD, diffusion reflectance spectrum (DRS) and Raman scattering. With the increase of doping level x, the optical absorption edge shifts towards higher wavelength and is smoothened gradually, meanwhile the Raman spectrum shows that Raman mode is also changed. The photoluminescence spectrum under magnetic field shows that near-infrared luminescence is probably related to Sn ions. The magnetization measurement demonstrates that Mn-doped BaSnO3 system exhibits ferromagnetism at low temperature, which can be explained by the F-center exchange (FCE) mechanism.
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 11004071, 11004199).
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    Coey J M D, Douvalis A P, Fitzgerald C B, Venkatesan M 2004 Appl. Phys. Lett. 84 1332

  • [1]

    Smith J, Welch A J E 1960 Acta Crystallogr. 13 653

    [2]
    [3]

    Cerd J, Arbiol J, Diaz R, Dezanneau G, Morante J R 2002 Mater. Lett. 56 131

    [4]
    [5]

    Shimizu Y, Fukuyama Y, Narikiyo T, Arai H, Seiyama T 1985 Chem. Lett. 9 377

    [6]

    Maekawa T, Kurosaki K, Yamanaka S 2006 J. Alloys Compd. 416 214

    [7]
    [8]

    Vivekanandan R, Kutty T R N 1988 Ceram. Int. 14 207

    [9]
    [10]
    [11]

    Moseley P T, Williams D E, Tofield B C 1988 Sens. Actuators. 14 79

    [12]
    [13]

    Shimizu Y, Shimabukuro M, Arai H, Seiyama T 1989 J. Electrochem. Soc. 136 1206

    [14]
    [15]

    Lumpe U, Gerblinger J, Meixner H 1995 Sens. Actuators B 24/25 657

    [16]

    Hodge I M, Ingram M D, West A R 1976 J. Electroanal. Chem. 74 125

    [17]
    [18]

    Wang H F, Liu Q Z, Chen F, Gao G Y, Wu W B, Chen X H 2007 J. Appl. Phys. 101 106105

    [19]
    [20]
    [21]

    Liu Q Z, Wang H F, Chen F, Wu W B 2008 J. Appl. Phys. 103 093709

    [22]
    [23]

    Liu Q Z, Dai J M , Liu Z L, Zhang X B, Zhu G P, Ding G H 2010 J. Phys. D: Appl. Phys. 43 455401

    [24]
    [25]

    Yuan Y P, Lv J, Jiang X J, Li Z S, Yu T, Zou Z G, Ye J H 2007 Appl. Phys. Lett. 91 094107

    [26]

    Borse P H, Joshi U A, Ji S M, Jang J S, Lee J S,Jeong E D, Kim H G 2007 Appl. Phys. Lett. 90 034103

    [27]
    [28]
    [29]

    Tan X Y, Chen C L, Jin K S 2011 Acta Phys. Sin. 60 107105 (in Chinese) [谭兴毅, 陈长乐, 金克新 2011 物理学报 60 107105]

    [30]

    Kuang A L, Liu X, Lu Z L, Ren S K, Liu C Y, Zhang F M,Du Y W 2005 Acta Phys. Sin. 54 2934(in Chinese) [匡安龙, 刘兴, 路忠林, 任尚坤, 刘存业, 张凤鸣, 都有为 2005 物理学报 54 2934]

    [31]
    [32]
    [33]

    Balamurugan K, E Senthil Kumar, Ramachandran B, Enkatesh S, Harish Kumar N 2012 J. Appl. Phys. 111 074107

    [34]

    Balamurugan K, Harish Kumar N, Ramachandrana B, Ramachandra Raoa M S, Arout Chelvane J, Santhosh P N 2009 Solid State Commun. 149 884

    [35]
    [36]

    Duan L B, Rao G H, Wang Y C, Yu J, Wang T 2008 J. Appl. Phys. 123 1

    [37]
    [38]

    Mizoguchi H, Woodward P M, Park C, Keszler D A 2004 J. Am. Chem. Soc. 126 9796

    [39]
    [40]

    Wiles D B,Young R A 1981 J. Appl. Crystallogr. 14 149

    [41]
    [42]

    Udawatte Ch P, Kakihana M, Yoshimura M 1998 Solid State Ionics. 108 23

    [43]
    [44]
    [45]

    Zhong W W, Liu F M, Cai L G, Ding P,Liu X Q, Li Y 2011 Acta Phys. Sin. 60 7105 (in Chinese) [钟文武, 刘发民, 蔡鲁刚, 丁芃, 柳学全, 李一 2011 物理学报 60 8102]

    [46]
    [47]

    Coey J M D, Douvalis A P, Fitzgerald C B, Venkatesan M 2004 Appl. Phys. Lett. 84 1332

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Publishing process
  • Received Date:  23 July 2012
  • Accepted Date:  15 August 2012
  • Published Online:  05 January 2013

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