Influences of deposition rate in second stage on the Cu(In,Ga)Se2 thin film and device prepared by low-temperature process

Li Zhi-Guo; Liu Wei; He Jing-Jing; Li Zu-Liang; Han An-Jun; Zhang Chao; Zhou Zhi-Qiang; Zhang Yi; Sun Yun

doi:10.7498/aps.62.038803

Abstract

Polycrystalline Cu(In,Ga)Se2 (CIGS) thin ?lms are deposited onto soda-lime glass substrates by the low-temperature three-stage process (below substrate temperature of 420℃). The influences of growth rate in the second stage on structural and electrical properties of CIGS thin film and device performance are investigated. With the increase of deposition rate during the second stage, the crystallinity and grain compactness of CIGS thin film are promoted, and the double-peak reflection pattern is reduced obviously,which can reduce the recombination in the grain boundary and help to improve the conversion efficiency of the CIGS solar cell significantly. However, according to the experimental results, higher growth rate during the second stage leads to rough surface and low carrier concentration. The larger surface roughness can be attributed to the larger grain size of secondary-phase Cu2-xSe, and the lower carrier concentration results from the reduction of passivation donor defect effect which is induced by the hindrance of Na diffusion from the glass substrate. High growth rate in the second stage is found to be able to increase the interface recombination and induce shunt paths in the solar cell and then the open circuit voltage and the cell parameters are deteriorated. Finally, a high conversion efficiency of 11.24% is achieved by optimizing the growth rate in the second stage.

Keywords:

Authors and contacts

1.
Institute of Photo-Electronics Thin Film Devices and Technique, College of Information Technical Science, Nankai University, Tianjin 300071, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076061, 60906033), the Natural Science Foundation of Tianjin, China (Grant No. 11JCYBJC01200) and the National High Technology Research and Development Program of China (Grant No. 2004AA513020).

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Cited By

[1]	Repins I, Glynn S, Duenow J, Coutts T J, Metzger W K, Contreras M A 2009 Proceedings of Society of Photographic Instrumentation Engineers San Diego, California August 2-6, 2009 p74090M
[2]	Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Progress in Photovoltaics: Research and Applications 19 894
[3]	Chirilă A, Buecheler S, Pianezzi F, Bloesch P, Gretener C, Uhl A R, Fella C, Kranz L, Perrenoud J, Seyrling S, Verma R, Nishiwaki S, Romanyuk Y E, Bilger G, Tiwari A N 2011 Nat. Mater. 10 857
[4]	Sharaman W N, Birkmire R W, Marsillac S, Marudachalam M, Orbey N, Russell T W F 1997 Proceedings of Photovoltaic Specialists Conference Anaheim, CA, September 29-Octobor 3, 1997 p331
[5]	Lundberg O, Bodegrd M, Stolt L 2003 Thin Solid Films 431 26
[6]	Chirila A, Seyrling S, Buecheler S, Guettler D, Nishiwaki S, Romanyuk Y E, Bilger G, Tiwari A N 2011 Progress in Photovoltaics: Research and Applications 20 209
[7]	Chirila A, Guettler D, Bremaud D 2009 Proceedings of Photovoltaic Specialists Conference Philadelphia, PA, June 7-12 2009 p812
[8]	Kessler J, Scholdstrom J, Stolt L 2000 Proceedings of Photovoltaic Specialists Conference Anchorage, AK, 2000 p509
[9]	Gabor A M, Tuttle J R, Bode M H, Franz A, Tennant A L, Contreras M A, Noufi R, Jensen D G, Hermann A M 1996 Solar Energy Materials and Solar Cells 41-42 247
[10]	Kohara N, Negami T, Nishitani M, Wada T 1995 Japanese Journal of Applied Physics 34 L1141
[11]	Nishiwaki S, Satoh T, Hayashi S, Hashimoto Y, Negami T, Wada T 1999 Journal of Materials Research 14 4514
[12]	Tuttle J R, Contreras M, Bode M H, Niles D, Albin D S, Matson R, Gabor A M, Tennant A, Duda A, Noufi R 1995 Journal of Applied Physics 77 153
[13]	Ao J P, Yang L, Yan L, Sun G Z, He Q, Zhou Z Q, Sun Y 2009 Acta Phys. Sin. 58 1870 (in Chinese) [敖建平, 杨亮, 闫礼, 孙国忠, 何青, 周志强, 孙云 2009 物理学报 58 1870]
[14]	Noufi R, Yanfa Y, Abu-Shama J, Jones K, Al-Jassim M, Keyes B, Alleman J, Ramanathan K 2002 Proceedings of Photovoltaic Specialists Conference New Orleans LA, ETATS-UNIS May 19-24, 2002 p508
[15]	Zhang L, He Q, Jiang W L, Liu F F, Li C J, Sun Y 2009 Solar Energy Materials and Solar Cells 93 114
[16]	Zhang L, He Q, Xu C M, Xue Y H, Li C J, Sun Y 2008 Chin. Phys. B 17 3138
[17]	Li Z, Nishijima M, Yamada A, Konagai M 2009 Physica Status Solidi (c) 6 1273
[18]	Contreras M A, Jones K M, Gedvilas L, Matson R 2000 Proceedings of 16th European Photovoltaic Solar Energy Conference and Exhibition Glasgow, U.K., May 1-5, 2000 p732
[19]	Nishiwaki S, Satoh T, Hashimoto Y, Negami T, Wada T 2001 Journal of Materials Research 16 394
[20]	Shafarman W N, Klenk R, McCandless B E 1996 Journal of Applied Physics 79 7324
[21]	Ruckh M, Schmid D, Kaiser M, Schäffler R, Walter T, Schock H W 1996 Solar Energy Materials and Solar Cells 41-42 335
[22]	Rudmann D, Kaelin M, Haug F J, Kurdesau F, Zogg H, Tiwari A N 2003 Proceedings of Photovoltaic Energy Conversion Osaka, Japan, May 18 2003 p376
[23]	Niles D W, Al-Jassim M, Ramanathan K 1999 Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 291
[24]	Lundberg O, Lu J, Rockett A, Edoff M, Stolt L 2003 Journal of Physics and Chemistry of Solids 64 1499
[25]	Guttler D, Chirila A, Seyrling S, Blosch P, Buecheler S, Fontane X 2010 Proceedings of Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010 p3420
[26]	Wei S H, Zhang S B, Zunger A 1999 Journal of Applied Physics 85 7214
[27]	He J J, Liu W, Li Z G, Li B Y, Han A J, Li G M, Zhang C, Zhang Y, Sun Y 2012 Acta Phys. Sin. 61 198801 (in Chinese) [何静婧, 刘玮, 李志国, 李博研, 韩安军, 李光旻, 张超, 张毅, 孙云 2012 物理学报 61 198801]
[28]	Hegedus S S, Shafarman W N 2004 Progress in Photovoltaics: Research and Applications 12 155
[29]	Repins I, Contreras M A, Egaas B, DeHart C, Scharf J, Perkins C L, To B, Noufi R 2008 Progress in Photovoltaics: Research and Applications 16 235
[30]	Contreras M A, Ramanathan K, AbuShama J, Hasoon F, Young D L, Egaas B, Noufi R 2005 Progress in Photovoltaics: Research and Applications 13 209
[31]	Minemoto T, Matsui T, Takakura H, Hamakawa Y, Negami T, Hashimoto Y, Uenoyama T, Kitagawa M 2001 Solar Energy Materials and Solar Cells 67 83
[32]	Dullweber T, Rau U, Contreras M A, Noufi R, Schock H W 2000 Electron Devices 47 2249

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Vol. 62, Issue 3 - 2013-02-05

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